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41. 发明授权

US06989274B2 Polyaspartic acid concentration determination by fluorometry 失效
公开(公告)号：US06989274B2
公开(公告)日：2006-01-24
申请号：US09939131
申请日：2001-08-24
申请人： Thomas Klein , Thomas Klausa , Andreas Elschner , Ralf-Johann Moritz , Monika Cordes
发明人： Thomas Klein , Thomas Klausa , Andreas Elschner , Ralf-Johann Moritz , Monika Cordes
IPC分类号： G01N31/00
CPC分类号： C08G73/1092 , C08F8/30 , C08G69/10
摘要： The present invention relates to a method of performing concentration determinations of aqueous solutions of polyaspartic acid and/or salts thereof.

42. 发明申请

US20060001203A1 Connecting bearing 有权
标题翻译：连接轴承
公开(公告)号：US20060001203A1
公开(公告)日：2006-01-05
申请号：US11168294
申请日：2005-06-29
申请人： Thomas Haubrich , Thomas Klein
发明人： Thomas Haubrich , Thomas Klein
IPC分类号： F16F13/00
CPC分类号： F16F1/3732 , B62D33/0604 , F16F1/377
摘要： A connecting bearing for elastic connection between at least two elements. The connecting bearing includes a first fastening device and a second fastening device. The first fastening device and second fastening device are each mechanically coupled by a elastomer means. The elstomer means is constructed and used as a vibration insulator.
摘要翻译：用于至少两个元件之间弹性连接的连接轴承。连接轴承包括第一紧固装置和第二紧固装置。第一紧固装置和第二紧固装置均通过弹性装置机械联接。该装置被构造并用作振动绝缘体。

43. 发明授权

US06954291B2 Method, apparatus, and computer program for reducing plate material waste in flexography plate making 有权
标题翻译：用于减少柔版印版制版中板材浪费的方法，装置和计算机程序
公开(公告)号：US06954291B2
公开(公告)日：2005-10-11
申请号：US09946145
申请日：2001-09-04
申请人： Thomas Klein , Hans Dewitte
发明人： Thomas Klein , Hans Dewitte
IPC分类号： B41C1/05 , H04N1/387 , G06K15/00
CPC分类号： H04N1/3872 , B41C1/05
摘要： Full-format screened data is processed in a computer-implemented method to identify zones that contain printable information. The zones are packed, imaged and made into flexo plates, and elements cut out from the plates for each zone of printable information. The plates use less flexo material than the full-format screened data. The cut elements are accurately placed on a flexo plate carrier to form a set of plates on a carrier for printing the full format screened data.
摘要翻译：以计算机实现的方法处理全格式屏蔽数据，以识别包含可打印信息的区域。这些区域被包装，成像并制成柔版印刷版，并且每个印刷信息区域从板上切出的元件。与全格式筛选数据相比，印版使用的柔版材料少。切割元件被精确地放置在柔版印版载体上以在载体上形成一组印版，用于印刷全格式筛选数据。

44. 发明申请

US20050208487A1 Immobilized nuckeic acids and uses thereof 审中-公开
标题翻译：固定的尼古丁酸及其用途
公开(公告)号：US20050208487A1
公开(公告)日：2005-09-22
申请号：US10296506
申请日：2001-05-25
申请人： Jens Burmeister , Petra Burgstaller , Sven Klussmann , Thomas Klein , Christian Frauendorf
发明人： Jens Burmeister , Petra Burgstaller , Sven Klussmann , Thomas Klein , Christian Frauendorf
IPC分类号： B01D15/38 , B01J20/289 , B01J20/32 , C12N15/115 , C12Q1/68 , C07H21/04
CPC分类号： C12N15/115 , B01D15/3804 , B01J20/289 , B01J20/3204 , B01J20/321 , B01J20/3212 , B01J20/3219 , B01J20/3274 , C12N2310/351
摘要： One aspect of the present invention relates to an immobilized nucleic acid comprising a nucleic acid and a matrix where the nucleic acid is a Spiegelmer and the Spiegelmer is functionally active. Another aspect of the invention concerns an immobilized nucleic acid comprising a nucleic acid and a matrix where the nucleic acid is coupled to the matrix at least via its 3′ end and the nucleic acid is a functional nucleic acid. Finally a further aspect of the invention concerns the use of such immobilized nucleic acids as affinity ligands for example in chromatography and in apheresis.
摘要翻译：本发明的一个方面涉及包含核酸和基质的固定化核酸，其中核酸是Spiegelmer，而Spiegelmer是功能活性的。本发明的另一方面涉及包含核酸和基质的固定核酸，其中核酸至少通过其3'末端偶联至基质，核酸是功能性核酸。最后，本发明的另一方面涉及这种固定化核酸如亲和配体在色谱法和分离术中的应用。

45. 发明授权

US06740773B2 Process for preparing cyclohexanedicarboxylic esters 失效
标题翻译：环己烷二羧酸酯的制备方法
公开(公告)号：US06740773B2
公开(公告)日：2004-05-25
申请号：US10160780
申请日：2002-06-03
申请人： Hans Bohnen , Thomas Klein , Klaus Bergrath
发明人： Hans Bohnen , Thomas Klein , Klaus Bergrath
IPC分类号： C07C6974
CPC分类号： C07C67/303 , C07C2601/14 , C07C69/75
摘要： The invention relates to a process for preparing cyclohexanedicarboxylic esters (hexahydrophthalic diesters) by esterifying the corresponding benzenedicarboxylic acids and immediately hydrogenating the esterification mixture in the presence of nickel catalysts.
摘要翻译：本发明涉及通过酯化相应的苯二甲酸并在镍催化剂存在下立即使酯化混合物加氢来制备环己烷二羧酸酯（六氢邻苯二甲酸二酯）的方法。

46. 发明授权

US06352587B1 Use of a colorant solution containing a stable, at least partially neutralized chromium (III) coordination compound for coloring unglazed ceramic 失效
标题翻译：使用含有稳定的，至少部分中和的铬（III）配位化合物的着色剂溶液用于着色无釉陶瓷
公开(公告)号：US06352587B1
公开(公告)日：2002-03-05
申请号：US09323140
申请日：1999-06-01
申请人： Thomas Staffel , Jürgen Straub , Thomas Klein
发明人： Thomas Staffel , Jürgen Straub , Thomas Klein
IPC分类号： C09C134
CPC分类号： C04B41/5033
摘要： A process for coloring an unglazed ceramic with an aqueous colorant solution containing a chromium (III) coordination compound which is at least partially neutralized and stable, including (a) dissolving a carboxylic acid selected from the group consisting of acetic acid, an organic dicarboxylic acid having a general formula (COOH)—(CH2)n—(COOH), where n ranges from 0 to 10, and an unsaturated, organic dicarboxylic acid in water at a temperature ranging from 40 to 60° C. to provide an aqueous solution of a carboxylic acid; (b) adding a chromium (III) compound to the aqueous solution of a carboxylic acid while stirring for a time and at a temperature effective for reaction to form an aqueous solution containing a chromium (III) coordination compound; (c) filtering the aqueous solution containing the chromium (III) coordination compound to provide a filtered aqueous solution; and (d) adjusting pH of the filtered aqueous solution to a pH ranging from 3 to 6.5 by addition of one of alkali hydroxide or ammonia to provide the aqueous colorant solution containing a chromium (III) coordination compound which is at least partially neutralized, which is stable, and which has a chromium content ranging from 5 to 10% by weight.
摘要翻译：一种用含有至少部分中和并稳定的铬（III）配位化合物的含水着色剂溶液着色无釉陶瓷的方法，包括（a）将选自乙酸，有机二羧酸具有通式（COOH） - （CH 2）n - （COOH），其中n为0至10，以及在40至60℃的温度范围内的不饱和有机二羧酸在水中的溶液，以提供水溶液的羧酸; （b）向羧酸水溶液中加入铬（III）化合物，同时搅拌一段时间并在有效反应的温度下形成含有（III）配位化合物的水溶液; （c）过滤含有铬（III）配位化合物的水溶液以提供过滤的水溶液; 和（d）通过加入碱金属氢氧化物或氨来调节过滤的水溶液的pH至3至6.5的pH，以提供含有至少部分中和的铬（III）配位化合物的含水着色剂溶液，其中是稳定的，并且其铬含量为5至10重量％。

47. 发明授权

US6042884A Aqueous ruthenium chloride solution for blackening ceramic surfaces 失效
标题翻译：用于使陶瓷表面变黑的氯化钌水溶液
公开(公告)号：US6042884A
公开(公告)日：2000-03-28
申请号：US11898
申请日：1998-04-30
申请人： Thomas Klein , Thomas Staffel , Lysander Fischer
发明人： Thomas Klein , Thomas Staffel , Lysander Fischer
IPC分类号： C04B33/34 , C04B41/50 , C04B41/85 , C04B41/87 , B05D3/02
CPC分类号： C04B41/009 , C04B33/34 , C04B41/5072 , C04B41/85 , C04B2111/82
摘要： An aqueous ruthenium chloride solution for blackening ceramic surfaces includes ruthenium chloride; water present in an amount effective to provide an aqueous solution of ruthenium chloride; and a buffer which is selected from the group consisting of sodium acetate, sodium propionate, potassium acetate, potassium propionate, and mixtures thereof, and which is present in an amount effective to provide the aqueous solution with a pH of at least 1.5. A method for dyeing a ceramic surface includes applying the aqueous solution of ruthenium chloride to a ceramic surface by at least one of spraying, dipping, painting and printing to provide a treated surface; drying and firing the treated surface at a temperature ranging from about 300 to about 1400.degree. C. for a period of time ranging from one half hour to five hours; and grinding and polishing the treated surface to even out the treated surface.
摘要翻译： PCT No.PCT / EP97 / 03087第 371日期：1998年4月30日 102（e）日期1998年4月30日PCT提交1997年6月13日PCT公布。公开号WO97 / 49650 PCT 日期1997年12月31日用于使陶瓷表面变黑的氯化钌水溶液包括氯化钌; 以有效提供氯化钌水溶液的量存在水; 和选自乙酸钠，丙酸钠，乙酸钾，丙酸钾及其混合物的缓冲剂，其以有效提供水溶液至少1.5的pH的量存在。用于染色陶瓷表面的方法包括通过喷涂，浸涂，喷涂和印刷中的至少一种将氯化钌水溶液施加到陶瓷表面以提供经处理的表面; 在约300至约1400℃的温度下干燥和烧制经处理的表面一段时间为半小时至五小时; 并研磨和抛光经处理的表面以使经处理的表面均匀。

48. 发明授权

US4475118A Dynamic MOS RAM with storage cells having a mainly insulated first plate 失效
标题翻译：具有存储单元的动态MOS RAM具有主要绝缘的第一板
公开(公告)号：US4475118A
公开(公告)日：1984-10-02
申请号：US217425
申请日：1980-12-15
申请人： Thomas Klein , Charles E. Boettcher
发明人： Thomas Klein , Charles E. Boettcher
IPC分类号： H01L27/108 , H01L27/04 , G11C11/40
CPC分类号： H01L27/10805
摘要： An improved dynamic MOS RAM having a plurality of selection lines and data lines and a plurality of storage cells connected thereto, wherein each storage cell includes a storage capacitor having first and second plates, wherein the second plate is adapted to be coupled to a reference potential terminal; and a MOSFET having a semiconductor substrate, a gate connected to one of the selection lines, a first conduction terminal coupled to one of the data lines, and a second conduction terminal connected in common with a first plate of the storage capacitor, is disclosed. The first plate of the storage capacitor includes first doped polysilicon conductive layer that has the majority of its area separated from the semiconductor substrate of the MOSFET by at least an insulating layer. The second plate of the storage capacitor includes a second doped polysilicon conductive layer that is at least coextensive with and insulated from the first conductive layer. The transistor gate is defined by a third doped polysilicon conductive layer that is insulated from the first and second conductive layers. Approximately 45% of the cell area can be utilized for charge storage, and only about 20% of this storage area is susceptible to loss of charge by reason of leakage through the depletion/junction area in the substrate.
摘要翻译：一种改进的动态MOS RAM，具有多个选择线和数据线以及连接到其上的多个存储单元，其中每个存储单元包括具有第一和第二板的存储电容器，其中第二板适于耦合到参考电位终奌站; 以及具有半导体衬底的MOSFET，连接到选择线之一的栅极，耦合到数据线之一的第一导电端子和与存储电容器的第一板共同连接的第二导电端子。存储电容器的第一板包括第一掺杂多晶硅导电层，其第一掺杂多晶硅导电层的绝大部分区域通过至少绝缘层与MOSFET的半导体衬底分离。存储电容器的第二板包括与第一导电层至少共同延伸并与其绝缘的第二掺杂多晶硅导电层。晶体管栅极由与第一和第二导电层绝缘的第三掺杂多晶硅导电层限定。大约45％的电池区域可以用于电荷存储，并且由于通过衬底中的耗尽/结合区域的泄漏，该存储区域的约20％容易损失电荷。

49. 发明授权

US4290186A Method of making integrated semiconductor structure having an MOS and a capacitor device 失效
公开(公告)号：US4290186A
公开(公告)日：1981-09-22
申请号：US059637
申请日：1979-07-23
申请人： Thomas Klein , Andrew G. Varadi , Charles E. Boettcher
发明人： Thomas Klein , Andrew G. Varadi , Charles E. Boettcher
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/94 , B01J17/00 , H01L21/265
CPC分类号： H01L27/1085 , H01L27/10805 , H01L29/94
摘要： This disclosure is directed to an improved semiconductor capacitor structure especially useful in an integrated semiconductor structure with an MOS device and fabrication methods therefor. This semiconductor capacitor is particularly useful for forming the capacitor portion of a single MOS memory cell structure in a dynamic MOS random access memory which utilizes one MOS device in combination with a capacitor. In one specific disclosure embodiment, the semiconductor capacitor comprises a boron (P) implanted region in a substrate of P- type conductivity followed by a shallow arsenic (N) implant into the boron implanted region. The boron implanted region provides a P type conductivity which has a higher concentration of P type impurities than the concentration of impurities contained in the substrate which is of P- type conductivity. Thus, the boron implanted region performs the important function of preventing a surface N type inversion layer from being formed across the semiconductor surface beneath the silicon dioxide insulating layer which could occur across the substrate P- surface if the arsenic implant region was made into the P- substrate without the P type boron implant. The arsenic implant is of N type conductivity and has a higher concentration of impurities than the boron implant region. The dielectric portion of the semiconductor capacitor is the portion of the silicon dioxide layer located on the surface of the arsenic implanted region. A doped polysilicon electrode is formed over this portion of the silicon dioxide insulating layer and provides the other plate of the capacitor structure. In another embodiment that is disclosed, this above described semiconductor capacitor structure or device is combined with an MOS device in a single integrated semiconductor structure in order to provide a single MOS memory cell for dynamic random access memory chip utilizing the MOS device and the capacitor. Preferably, the semiconductor capacitor is shown as a connected extension of either the source or drain region of the MOS device.

50. 发明授权

US09731382B2 Method for producing a body part of a vehicle and body part of a vehicle 有权
公开(公告)号：US09731382B2
公开(公告)日：2017-08-15
申请号：US14340239
申请日：2014-07-24
申请人： Thomas Klein , Dirk Lungershausen , Juergen Hulbert
发明人： Thomas Klein , Dirk Lungershausen , Juergen Hulbert
IPC分类号： B23K33/00 , B23K26/26 , B62D25/04 , B23K101/00
CPC分类号： B23K33/008 , B23K26/26 , B23K2101/006 , B62D25/04 , Y10T29/49622
摘要： A method is provided for producing a body part of a vehicle. The method includes, but is not limited to providing a first profile part with at least one first welding flange and with a first opening as well as a second profile part with at least one third welding flange. The welding flange is at least partially arranged on the third welding flange subject to the formation of an at least partially closed form of the body part. The first welding flange and the third welding flange are arranged within the at least partially closed form. A first laser beam is guided through the first opening onto the first welding flange subject to the formation of at least one first laser weld seam between the first welding flange and the third welding flange.

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