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41. 发明授权

US07804871B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07804871B2
公开(公告)日：2010-09-28
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

42. 发明授权

US07756180B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07756180B2
公开(公告)日：2010-07-13
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

43. 发明授权

US06455338B1 Method of manufacturing an integrated semiconductor laser-modulator device 失效
标题翻译：制造集成半导体激光调制装置的方法
公开(公告)号：US06455338B1
公开(公告)日：2002-09-24
申请号：US09400531
申请日：1999-09-21
申请人： Kazuhisa Takagi , Hitoshi Tada , Tohru Takiguchi
发明人： Kazuhisa Takagi , Hitoshi Tada , Tohru Takiguchi
IPC分类号： H01L2120
CPC分类号： H01S5/0265 , H01S5/2077 , H01S5/2081
摘要： An integrated semiconductor laser-modulator device less affected by a fluctuating electric field due to modulating signals applied to the modulator has improved frequency characteristics. The integrated semiconductor laser-modulator includes an active layer, a beam waveguide layer having a bulk structure with a bandgap energy larger than that of the active layer but smaller than that of a laser beam absorption layer having a bulk structure, wherein waveguides of the laser and modulator are connected and aligned, and a cladding layer including a diffraction grating is disposed on top of or beneath the waveguides.
摘要翻译：由于施加到调制器的调制信号而受波动电场影响较小的集成半导体激光调制器具有改善的频率特性。集成半导体激光调制器包括有源层，具有体积结构的波导波导层，其带隙能量大于有源层的带隙能量，但小于具有体结构的激光束吸收层的带隙能量，其中激光波导并且调制器被连接和对准，并且包括衍射光栅的包层设置在波导的顶部或下方。

44. 发明授权

US6023208A Dielectric filter 有权
标题翻译：介质过滤器
公开(公告)号：US6023208A
公开(公告)日：2000-02-08
申请号：US260764
申请日：1999-03-02
申请人： Hitoshi Tada , Hiromi Ogura
发明人： Hitoshi Tada , Hiromi Ogura
IPC分类号： H01P1/205 , H01P7/04
CPC分类号： H01P1/2056
摘要： A dielectric filter, includes a dielectric block including a plurality of elongated sub-blocks each having a pair of longitudinally opposing end faces and an outer surface, said sub-blocks being disposed adjacent one another; a plurality of longitudinally extending through-holes, at least one through-hole being formed between each corresponding pair of opposing end faces of the respective sub-blocks; a plurality of inner conductors, one inner conductor being formed on each of the inner surfaces of said plurality of through-holes, said plurality of inner conductors each having two opposing ends; an outer conductor formed on the outer surface of said dielectric block such that (i) the outer conductor is not electrically coupled to the respective ends of the inner conductor of every other sub-block such that the ends of those inner conductors are open-circuited, and (ii) the outer conductor is electrically coupled to the respective ends of the inner conductor of the remaining sub-blocks such that the ends of those inner conductors are short-circuited; a plurality of connection conductors through which respective parts of the inner conductors located between corresponding open-circuited opposing ends are connected to said outer conductor; and an electromagnetic coupling preventing structure formed between each adjacent pair of sub-blocks and extending from one end face of each of said sub-blocks toward a central part of said sub-blocks between the two opposing end faces, wherein said dielectric filter produces a band elimination transfer function over some frequencies and a pass transfer function over other frequencies in use.
摘要翻译：一种介质滤波器，包括：介质块，其包括多个细长子块，每个细长子块具有一对纵向相对的端面和外表面，所述子块彼此相邻设置; 多个纵向延伸的通孔，至少一个通孔形成在各个子块的相应的一对相对面之间; 多个内部导体，在所述多个通孔的每个内表面上形成一个内部导体，所述多个内部导体各自具有两个相对的端部; 形成在所述介质块的外表面上的外部导体，使得（i）外部导体不电耦合到每个其他子块的内部导体的相应端部，使得这些内部导体的端部开路，和（ii）外部导体电耦合到其余子块的内部导体的相应端部，使得这些内部导体的端部短路; 多个连接导体，位于相应的开路的相对端之间的内部导体的相应部分穿过该连接导体连接到所述外部导体; 以及电磁耦合防止结构，其形成在每个相邻的子块之间并且在每个所述子块的一个端面朝向所述两个相对端面之间的所述子块的中心部分延伸，其中所述介质滤波器产生某些频率的频带消除传递函数和使用其他频率的传递函数。

45. 发明申请

US20080310473A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20080310473A1
公开(公告)日：2008-12-18
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/22 , H01S5/20
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

46. 发明申请

US20060157716A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060157716A1
公开(公告)日：2006-07-20
申请号：US11375016
申请日：2006-03-15
申请人： Atsushi Sugitatsu , Hitoshi Tada , Susumu Noda
发明人： Atsushi Sugitatsu , Hitoshi Tada , Susumu Noda
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , B82Y20/00 , G02B6/12004 , G02B6/1225 , G02F1/025 , G02F2202/32 , H01L2933/0083 , H01S5/0424 , H01S5/105 , H01S5/1085 , H01S5/2004 , H01S5/3054 , H01S5/32
摘要： A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.
摘要翻译：半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

47. 发明授权

US07042014B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07042014B2
公开(公告)日：2006-05-09
申请号：US10852180
申请日：2004-05-25
申请人： Atsushi Sugitatsu , Hitoshi Tada , Susumu Noda
发明人： Atsushi Sugitatsu , Hitoshi Tada , Susumu Noda
IPC分类号： H01L27/15
CPC分类号： H01S5/0425 , B82Y20/00 , G02B6/12004 , G02B6/1225 , G02F1/025 , G02F2202/32 , H01L2933/0083 , H01S5/0424 , H01S5/105 , H01S5/1085 , H01S5/2004 , H01S5/3054 , H01S5/32
摘要： A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.
摘要翻译：半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

48. 发明授权

US06282009B1 Light modulator and method of manufacturing the light modulator 失效
标题翻译：光调制器和制造光调制器的方法
公开(公告)号：US06282009B1
公开(公告)日：2001-08-28
申请号：US09245838
申请日：1999-02-08
申请人： Hitoshi Tada , Tomoko Kadowaki
发明人： Hitoshi Tada , Tomoko Kadowaki
IPC分类号： G02F103
CPC分类号： G02F1/025 , G02F2201/066 , G02F2201/122
摘要： A light modulator having a reduced parasitic static capacitance includes a semiconductor substrate having a mesa section and a bonding pad section. A primary insulating film on the substrate continuously covers the mesa section and the bonding pad section. After a mask has been formed on a portion of the primary insulating film opposite the bonding pad section, the remaining portion of the primary insulating film is etched, followed by removal of the mask. After the removal of the mask, a second insulating film is formed continuously covering the primary insulating film opposite the bonding pad section and the mesa section so that a relatively thick insulating layer is present only opposite the bonding pad section.
摘要翻译：具有降低的寄生静电电容的光调制器包括具有台面部分和接合焊盘部分的半导体衬底。基板上的主绝缘膜连续地覆盖台面部分和接合焊盘部分。在与绝缘焊盘部分相对的一次绝缘膜的一部分上形成掩模之后，蚀刻一次绝缘膜的剩余部分，然后除去掩模。在去除掩模之后，形成连续地覆盖与接合焊盘部分和台面部分相对的主绝缘膜的第二绝缘膜，使得相对较厚的绝缘层仅与接合焊盘部分相对。

49. 发明授权

US08519501B2 Semiconductor light detecting element with grooved substrate 失效
标题翻译：具有沟槽基板的半导体光检测元件
公开(公告)号：US08519501B2
公开(公告)日：2013-08-27
申请号：US13477128
申请日：2012-05-22
申请人： Hitoshi Tada , Yasuo Nakajima , Yasuhiro Kunitsugu
发明人： Hitoshi Tada , Yasuo Nakajima , Yasuhiro Kunitsugu
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/035281 , H01L31/105 , Y02E10/50
摘要： A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
摘要翻译：背面入射半导体光元件包括：第一导电类型的半导体衬底; 半导体衬底上的第一导电类型的第一半导体层; 在第一半导体层上的光吸收层; 在所述光吸收层上的第二半导体层; 以及在第二半导体层的一部分中具有第二导电类型的杂质扩散区。包括第一半导体层和杂质扩散区之间并延伸穿过光吸收层的p-n结的区域是检测入射在半导体衬底的背面上的光的光检测部分。半导体衬底的后表面中的凹槽围绕光检测部分，如在平面图中所示。

50. 发明申请

US20120206217A1 Band-Elimination Filter 审中-公开
标题翻译：带消除滤波器
公开(公告)号：US20120206217A1
公开(公告)日：2012-08-16
申请号：US13368485
申请日：2012-02-08
申请人： Takahiro Okada , Hideki Tsukamoto , Hitoshi Tada
发明人： Takahiro Okada , Hideki Tsukamoto , Hitoshi Tada
IPC分类号： H01P1/205
CPC分类号： H01P1/2056
摘要： A band-elimination filter (BEF) that includes a coaxial dielectric resonator block, a substrate, and first, second, and third inductance elements. The coaxial dielectric resonator block includes inner conductors and an outer conductor, and forms coaxial dielectric resonators. The first inductance element is between a signal transmission path connected to one of the coaxial dielectric resonators via a series resonant capacitor and a signal transmission path connected to the other one of the coaxial dielectric resonators via a series resonant capacitor. The second inductance element is between one end of the first inductance element and the ground, and the third inductance elements is between the other end of the first inductance element and the ground.
摘要翻译：一种带除滤波器（BEF），其包括同轴介质谐振器块，衬底以及第一，第二和第三电感元件。同轴介质谐振器块包括内导体和外导体，并形成同轴介质谐振器。第一电感元件在经由串联谐振电容器连接到一个同轴介质谐振器的信号传输路径和经由串联谐振电容器连接到另一个同轴介质谐振器的信号传输路径之间。第二电感元件位于第一电感元件的一端和地之间，第三电感元件位于第一电感元件的另一端与地之间。

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