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41. 发明授权

US4298883A Plastic material package semiconductor device having a mechanically stable mounting unit for a semiconductor pellet 失效
标题翻译：具有用于半导体颗粒的机械稳定的安装单元的塑料材料封装半导体器件
公开(公告)号：US4298883A
公开(公告)日：1981-11-03
申请号：US899820
申请日：1978-04-25
申请人： Shigeru Komatsu , Satoshi Takahashi , Masao Wakatsuki
发明人： Shigeru Komatsu , Satoshi Takahashi , Masao Wakatsuki
IPC分类号： H01L23/29 , H01L23/28 , H01L23/31 , H01L23/495 , H01L23/48 , H01L29/44
CPC分类号： H01L23/3107 , H01L23/49503 , H01L23/49537 , H01L23/49568 , H01L2224/48091 , H01L2224/48247 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/181 , Y10T29/49121
摘要： With a packaged semiconductor device of this invention, an IC pellet or chip supported on a mounting unit is encapsulated in plastics material, for example, epoxy resin or silicone resin. A plurality of lead strips are disposed at one end in the proximity of the mounting part of the mounting unit. The lead strips are electrically connected to the respective conductive pads of the IC pellet set on the mounting part of the mounting unit. The lead strips extend at the other end outside of an plastics material. Mounting unit-reinforcing side walls project substantially at right angles from the edges of the flat part of the mounting unit. The heat-radiating legs of the mounting unit extend substantially at right angles from the low edges of the side walls with the bottom surface of said legs exposed to the outside of the plastics material.
摘要翻译：利用本发明的封装半导体器件，支撑在安装单元上的IC芯片或芯片被封装在塑料材料中，例如环氧树脂或硅树脂。多个引线条设置在安装单元的安装部分附近的一端。引线条电连接到安装在安装单元的安装部分上的IC芯片的相应导电焊盘。引线条在另一端延伸到塑料材料外面。安装单元加强侧壁从安装单元的平坦部分的边缘基本成直角地突出。安装单元的散热腿从侧壁的低边缘基本上以直角延伸，并且所述腿的底表面暴露于塑料材料的外部。

42. 发明授权

US4236832A Strain insensitive integrated circuit resistor pair 失效
标题翻译：应变不敏感集成电路电阻对
公开(公告)号：US4236832A
公开(公告)日：1980-12-02
申请号：US920358
申请日：1978-06-29
申请人： Shigeru Komatsu , Satoshi Takahashi , Kouji Suzuki , Masao Wakatsuki
发明人： Shigeru Komatsu , Satoshi Takahashi , Kouji Suzuki , Masao Wakatsuki
IPC分类号： H01L23/31 , H01L29/04 , H01L29/8605 , H01L27/04
CPC分类号： H01L23/3107 , H01L29/045 , H01L29/8605 , H01L2224/48091 , H01L2224/48247 , H01L2924/181
摘要： A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.
摘要翻译：半导体器件包括具有相同电阻的第一和第二电阻器区域，并且形成在硅衬底的主表面中以在垂直方向上延伸。当电阻区域具有p导电型时，所述主面是{100}面，{511}面，{811}面或{911}面。当电阻区域为n导电型时，所述主表面为{111}面。

43. 发明授权

US4210689A Method of producing semiconductor devices 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4210689A
公开(公告)日：1980-07-01
申请号：US969007
申请日：1978-12-13
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： H01L21/033 , H01L21/285 , H01L21/3105 , H01L21/311 , H01L21/38
CPC分类号： H01L21/28525 , H01L21/033 , H01L21/3105 , H01L21/31111
摘要： Semiconductor devices are produced by forming a first insulation film of a relatively high density on a semiconductor substrate having a first semiconductor region formed therein in advance, said first insulation film covering said first semiconductor region, and forming a second insulation film of a relatively low density on the first insulation film. The second insulation film is provided with at least one hole, and the second insulation film is densified to a level substantially equal to that of the first insulation film. Then the exposed portion of the first insulation film is provided with at least one opening with a nitride film used as a mask, and an impurity is diffused through the opening into the first semiconductor region to form therein a second semiconductor region.
摘要翻译：半导体器件通过在预先形成有第一半导体区域的半导体衬底上形成具有较高密度的第一绝缘膜来制造，所述第一绝缘膜覆盖所述第一半导体区域，并且形成相对低密度的第二绝缘膜在第一绝缘膜上。第二绝缘膜设置有至少一个孔，并且第二绝缘膜被致密化至与第一绝缘膜基本相等的水平。然后，第一绝缘膜的暴露部分设置有至少一个具有用作掩模的氮化物膜的开口，并且杂质通过开口扩散到第一半导体区域中以在其中形成第二半导体区域。

44. 发明授权

US06452638B1 Decoder device and receiver using the same 失效
公开(公告)号：US06452638B1
公开(公告)日：2002-09-17
申请号：US09984509
申请日：2001-10-30
申请人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
发明人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
IPC分类号： H04N1120
CPC分类号： H04N5/775 , H04N5/4401 , H04N5/445 , H04N5/45 , H04N5/46 , H04N5/85 , H04N7/012 , H04N21/42638 , H04N21/42653 , H04N21/4305 , H04N21/4316 , H04N21/440218
摘要： An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.

45. 发明授权

US06310654B1 Decoder device and receiver using the same 有权
标题翻译：解码器和接收机使用相同
公开(公告)号：US06310654B1
公开(公告)日：2001-10-30
申请号：US09241614
申请日：1999-02-02
申请人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
发明人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
IPC分类号： H04N327
CPC分类号： H04N5/775 , H04N5/4401 , H04N5/445 , H04N5/45 , H04N5/46 , H04N5/85 , H04N7/012 , H04N21/42638 , H04N21/42653 , H04N21/4305 , H04N21/4316 , H04N21/440218
摘要： An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converting means, a plurality of OSD means and means for taking motion picture data used in an analog broadcast in a common memory.
摘要翻译：本申请的目的是提供在具有高图像质量的模拟和数字广播两者中使用的运动图像数据的显示和公共用户界面。上述目的可以通过提供多个图像格式转换装置，多个OSD装置和用于在公共存储器中采用模拟广播中使用的运动图像数据的装置来实现。

46. 发明授权

US5986327A Bipolar type diode 失效
标题翻译：双极型二极管
公开(公告)号：US5986327A
公开(公告)日：1999-11-16
申请号：US173953
申请日：1993-12-28
申请人： Kouichi Mishio , Satoshi Takahashi , Shigeru Komatsu
发明人： Kouichi Mishio , Satoshi Takahashi , Shigeru Komatsu
IPC分类号： H01L29/861 , H01L29/866 , H01L31/107
CPC分类号： H01L29/8611 , H01L29/866
摘要： A base region is formed at a shallow junction and an impurity region of higher impurity concentration is formed, by a separate step, as a buried layer at a predetermined distance from the surface of a semiconductor substrate. By so doing, a bipolar diode is implemented which does not involve an increase in a base resistance even if conduction is effected over a longer period of time.
摘要翻译：在浅结上形成基极区，通过单独的步骤，形成杂质浓度较高的杂质区，作为与半导体衬底的表面预定距离的掩埋层。通过这样做，实现了双极二极管，其不涉及基极电阻的增加，即使在更长的时间段内进行导通。

47. 发明授权

US4882290A Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4882290A
公开(公告)日：1989-11-21
申请号：US148351
申请日：1988-01-25
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： H01L29/73 , H01L21/285 , H01L21/331 , H01L29/10 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/28525 , H01L29/1004 , H01L29/732 , Y10S148/01 , Y10S148/011 , Y10S148/123 , Y10S148/124
摘要： In an NPN transistor, a contact base region, an active base region, and a further base region are formed in the silicon substrate. The further base region is between the contact base region and the active base region, and is adjacent to the contact base region and the active base region. The further base region has a depth shallower than that of the contact base region and deeper than that of the active base region. In the method of forming the bipolar transistor, a polysilicon semiconductor layer is formed on a semiconductor substrate. The polysilicon semiconductor layer is partially etched to form a base leading electrode and an emitter leading electrode. A semiconductor impurity is implanted into a base forming region of the silicon substrate via that portion where the polysilicon semiconductor layer is removed.
摘要翻译：在NPN晶体管中，在硅衬底中形成接触基极区域，有源基极区域和另外的基极区域。另外的基极区域在接触基极区域和有源基极区域之间，并且与接触基极区域和活性基极区域相邻。另外的基极区域的深度比接触基极区域的深度浅，并且比活性基极区域的深度深。在形成双极晶体管的方法中，在半导体衬底上形成多晶硅半导体层。部分蚀刻多晶硅半导体层以形成基极引出电极和发射极引线电极。通过去除多晶硅半导体层的部分将半导体杂质注入到硅衬底的基底形成区域中。

48. 发明授权

US4824799A Method of making a bipolar semiconductor device 失效
标题翻译：制造双极型半导体器件的方法
公开(公告)号：US4824799A
公开(公告)日：1989-04-25
申请号：US178875
申请日：1988-04-04
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： H01L29/73 , H01L21/20 , H01L21/225 , H01L21/285 , H01L21/331 , H01L29/423 , H01L29/732 , H01L21/38
CPC分类号： H01L29/66287 , H01L21/2257 , H01L21/28531 , H01L29/42304 , H01L29/732
摘要： An n.sup.+ -type buried layer is formed in the surface region of a p-type semiconductor substrate. Isulating films are formed on the semiconductor substrate. The insulating films have openings located above the buried layer. An n-type monocrystalline silicon layer is formed in one opening located above the buried layer. A base region is formed in the monocrystalline silicon layer. The base region defines a remaining portion of the monocrystalline silicon layer as a collector region. An emitter region is formed in the base region. A polycrystalline silicon layer is buried in the insulating films to have ohmic contact with the base region and serve as a portion of a base connection region. The polycrystalline silicon layer contains a p-type impurity and serves as an impurity diffusion source for the formation of an external base of the base region. An MoSi.sub.2 layer is buried in the insulating films to have ohmic contact with the polycrystalline silicon layer and to serve as a portion of the base connection region, thereby reducing the base resistance. A conductive layer for connection with a collector is formed in another opening.
摘要翻译：在p型半导体衬底的表面区域形成n +型掩埋层。在半导体衬底上形成有隔离膜。绝缘膜具有位于掩埋层上方的开口。在位于掩埋层上方的一个开口中形成n型单晶硅层。在单晶硅层中形成基极区。基极区域将单晶硅层的剩余部分限定为集电极区域。在基极区域形成发射极区域。多晶硅层被埋在绝缘膜中以与基极区域欧姆接触并用作基极连接区域的一部分。多晶硅层含有p型杂质，作为形成基极区域的外部基底的杂质扩散源。 MoSi2层被埋在绝缘膜中以与多晶硅层欧姆接触并用作基极连接区域的一部分，由此降低了基极电阻。在另一个开口中形成用于与收集器连接的导电层。

49. 发明授权

US4802847A Dental implant 失效
标题翻译：牙种植体
公开(公告)号：US4802847A
公开(公告)日：1989-02-07
申请号：US97618
申请日：1987-09-16
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： A61C8/00
CPC分类号： A61C8/0019
摘要： A dental implant includes a wavy or tortuous body. The body with a tortuous cross section has ridges extending from an upper end to a lower end. The dental implant also has a head supported on the upper end of the body and adapted to fit into an artificial tooth.
摘要翻译：牙科植入物包括波状或曲折的身体。具有弯曲横截面的身体具有从上端延伸到下端的脊。牙科植入物还具有支撑在主体的上端并适于装配到人造牙齿中的头部。

50. 发明授权

US4638497A Framing code detector for a teletext receiver 失效
标题翻译：图文电视接收机的成帧检测器
公开(公告)号：US4638497A
公开(公告)日：1987-01-20
申请号：US653524
申请日：1984-09-24
申请人： Shigeru Komatsu , Keiji Kawata
发明人： Shigeru Komatsu , Keiji Kawata
IPC分类号： H04N7/025 , H04L7/04 , H04N7/03 , H04N7/035 , H04L7/08 , H04J3/06 , H04N1/36
CPC分类号： H04L7/042 , H04N7/035 , H04L7/046
摘要： A framing code detector includes a shift register supplied with a received framing code and a number of EX-OR gates each having one input connected to a respective stage of the shift register and another input which is supplied with a respective bit of a stored pattern having the inverted form of the anticipated framing code to be received/ a counter is provided for counting the number of times all outputs of EX-OR gates become "1" during a predetermined period, and an identification signal is produced when the count value of the counter is greater than a predetermined value.
摘要翻译：成帧代码检测器包括一个移位寄存器，该移位寄存器被提供有接收到的成帧代码和多个异或门，每个异或门具有连接到移位寄存器的各个级的一个输入端，另一个输入端被提供有存储模式的相应位，提供要接收的预期成帧代码的反转形式/计数器，用于在预定时间段期间对EX-OR门的所有输出的数量变为“1”的次数进行计数，并且当计数器的计数值计数器大于预定值。

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