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41. 发明授权

US08519387B2 Semiconductor device and method for manufacturing 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08519387B2
公开(公告)日：2013-08-27
申请号：US13185779
申请日：2011-07-19
申请人： Yuta Endo , Kosei Noda , Toshinari Sasaki
发明人： Yuta Endo , Kosei Noda , Toshinari Sasaki
IPC分类号： H01L29/10
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02367 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/78603 , H01L29/78618 , H01L29/7869
摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.
摘要翻译：使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层区域和氧化物半导体层的漏极区域。通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件特性可以制造。源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

42. 发明授权

US08518740B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08518740B2
公开(公告)日：2013-08-27
申请号：US12828468
申请日：2010-07-01
申请人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara
发明人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L29/7869 , H01L21/67109 , H01L21/67115 , H01L27/1225
摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.
摘要翻译：本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。之后，在氧气氛中进行缓慢冷却。除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

43. 发明授权

US08426868B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08426868B2
公开(公告)日：2013-04-23
申请号：US12604622
申请日：2009-10-23
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/02
CPC分类号： H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
摘要翻译：目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是可以抑制切断电流的提高。

44. 发明授权

US08395153B2 Semiconductor device and manufacturing method the same 有权
公开(公告)号：US08395153B2
公开(公告)日：2013-03-12
申请号：US13596527
申请日：2012-08-28
申请人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
发明人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

45. 发明授权

US08389989B2 Transistor having oxide semiconductor layer and display utilizing the same 有权
标题翻译：具有氧化物半导体层的晶体管和利用其的显示器
公开(公告)号：US08389989B2
公开(公告)日：2013-03-05
申请号：US12869278
申请日：2010-08-26
申请人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
发明人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
摘要翻译：本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层，使用金属材料形成。因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

46. 发明授权

US08318551B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08318551B2
公开(公告)日：2012-11-27
申请号：US12627204
申请日：2009-11-30
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/84 , H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/66969
摘要： A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.
摘要翻译：衬底上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的第一源极电极层和第一漏极电极层; 栅极绝缘层上的氧化物半导体层; 以及在所述氧化物半导体层上的第二源极电极层和第二漏极电极层。第一部分，第二部分和底部表面的第三部分分别与第一源极电极层，第一漏极电极层和栅极绝缘层接触。上表面的第一部分和第二部分分别与第二源极电极层和第二漏极电极层接触。第一源极电极层和第一漏极电极层分别与第二源极电极层和第二漏极电极层电连接。

47. 发明申请

US20120153275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120153275A1
公开(公告)日：2012-06-21
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

48. 发明授权

US09136389B2 Oxide semiconductor, thin film transistor, and display device 有权
标题翻译：氧化物半导体，薄膜晶体管和显示装置
公开(公告)号：US09136389B2
公开(公告)日：2015-09-15
申请号：US12581200
申请日：2009-10-19
申请人： Shunpei Yamazaki , Toshinari Sasaki , Miyuki Hosoba , Shunichi Ito , Junichiro Sakata
发明人： Shunpei Yamazaki , Toshinari Sasaki , Miyuki Hosoba , Shunichi Ito , Junichiro Sakata
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译：目的是控制氧化物半导体的组成和缺陷。另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数）小于50），还含有氢。在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。此外，氧化物半导体具有非晶结构。这里，n优选为大于或等于50，更优选小于10的非整数。

49. 发明授权

US09082663B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09082663B2
公开(公告)日：2015-07-14
申请号：US13608042
申请日：2012-09-10
申请人： Atsuo Isobe , Toshinari Sasaki
发明人： Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/78 , H01L21/336 , H01L27/12 , H01L29/417 , H01L29/786
CPC分类号： H01L27/1225 , H01L29/41733 , H01L29/78618 , H01L29/7869
摘要： In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation region is sandwiched are formed in the oxide semiconductor layer in a self-aligned manner. Wiring layers electrically connected to the conductive layer and the low-resistance regions are provided in openings of an insulating layer.
摘要翻译：在包括氧化物半导体层的半导体器件中，形成与氧化物半导体层的下部接触的导电层，并且进行用于添加杂质的处理，使得沟道形成区域和一对低电阻区域在在自对准的方式在氧化物半导体层中形成夹着沟道形成区域的区域。电连接到导电层和低电阻区域的接线层设置在绝缘层的开口中。

50. 发明授权

US08878288B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08878288B2
公开(公告)日：2014-11-04
申请号：US13446026
申请日：2012-04-13
申请人： Atsuo Isobe , Toshinari Sasaki
发明人： Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/66 , H01L29/786 , H01L29/423
CPC分类号： H01L29/78603 , H01L29/4236 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： To provide a highly reliable semiconductor device. To provide a semiconductor device which prevents a defect and achieves miniaturization. An oxide semiconductor layer in which the thickness of a region serving as a source region or a drain region is larger than the thickness of a region serving as a channel formation region is formed in contact with an insulating layer including a trench. In a transistor including the oxide semiconductor layer, variation in threshold voltage, degradation of electric characteristics, and shift to normally on can be suppressed and source resistance or drain resistance can be reduced, so that the transistor can have high reliability.
摘要翻译：提供高度可靠的半导体器件。提供一种防止缺陷并实现小型化的半导体器件。形成与包括沟槽的绝缘层接触的用作源区或漏区的区域的厚度大于用作沟道形成区的区的厚度的氧化物半导体层。在包括氧化物半导体层的晶体管中，可以抑制阈值电压的变化，电特性的劣化和正常的导通，可以降低源电阻或漏极电阻，从而晶体管可以具有高的可靠性。

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