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41. 发明授权

US07502396B2 Solid-state laser apparatus 有权
标题翻译：固态激光装置
公开(公告)号：US07502396B2
公开(公告)日：2009-03-10
申请号：US10569465
申请日：2004-08-23
申请人： Toshiyuki Kawashima , Tadashi Kanabe , Sadao Nakai , Hirofumi Kan
发明人： Toshiyuki Kawashima , Tadashi Kanabe , Sadao Nakai , Hirofumi Kan
IPC分类号： H01S3/04
CPC分类号： H01S3/042 , H01S3/025 , H01S3/0407 , H01S3/0606 , H01S3/08095 , H01S3/0941
摘要： A solid-state laser apparatus which can improve its durability is provide.In the solid-state laser apparatus 1, a main pipe 11 for circulating a coolant through a solid-state laser medium 3 is provided with a heat exchanger 14, whereby the laser medium 3 is prevented from raising its temperature. When the coolant becomes acidic or alkaline, a controller 24 controls a flow regulating valve 23, so as to increase the flow rate of the coolant flowing into a bypass pipe 21 provided with a deionizing filter 22, whereby the acidity or alkalinity of the coolant can be weakened. This can prevent the coolant from deteriorating a predetermined part of the laser apparatus 3, and thus can improve the durability of the solid-state laser apparatus 1. Also, since the bypass pipe 21 connected in parallel to a part of the main pipe 11 is provided with the deionizing filter 22, the flow rate of the coolant circulating through the main pipe 11 can be restrained from decreasing, and the cooling efficiency of the laser medium 3 can be prevented from lowering.
摘要翻译：提供可以提高其耐久性的固态激光装置。在固态激光装置1中，通过固体激光介质3使冷却剂循环的主管11设置有热交换器14，由此能够防止激光介质3升温。当冷却剂变为酸性或碱性时，控制器24控制流量调节阀23，以便增加流入设置有去离子过滤器22的旁通管21中的冷却剂的流量，由此冷却剂的酸度或碱度可以被削弱这可以防止冷却剂使激光装置3的预定部分劣化，从而可以提高固态激光装置1的耐久性。而且，由于与主管11的一部分并联连接的旁通管21是设置有去离子过滤器22时，可以抑制通过主管11循环的冷却剂的流量的降低，并且可以防止激光介质3的冷却效率降低。

42. 发明授权

US07466023B2 Semiconductor light emitting device and plant cultivating system 失效
标题翻译：半导体发光装置和植物栽培系统
公开(公告)号：US07466023B2
公开(公告)日：2008-12-16
申请号：US10506508
申请日：2003-03-06
申请人： Takayoshi Honma , Hiroshi Tsuchiya , Hirofumi Kan
发明人： Takayoshi Honma , Hiroshi Tsuchiya , Hirofumi Kan
IPC分类号： H01L23/34
CPC分类号： A01G7/045 , H01L23/473 , H01L2924/0002 , Y02P60/149 , Y10T29/49158 , H01L2924/00
摘要： Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.
摘要翻译：通过连接线3与冷却水通道23的导电部分电连接的保护电极2分别设置在与进水主管10和出水管6连接的进水管1的中部，在M个半导体激光器单元4中的出水母管13上。此时，由于保护电极2的电位与冷却水通路23的导电部分相等，因此电流几乎不会在保护电极2和冷却水通道23的导电部分。结果，M个半导体激光器单元4中的生锈被抑制，并且在冷却水通道23中阻止了堵塞的管道。

43. 发明申请

US20080279239A1 Semiconductor Laser Device and Method of Manufacturing the Same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20080279239A1
公开(公告)日：2008-11-13
申请号：US10577958
申请日：2004-12-16
申请人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
发明人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/02476 , H01S5/4025 , H01S5/405 , H01L2924/00
摘要： A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.
摘要翻译：半导体激光装置1包括：散热器20，其又包括通过连接金属构件形成的主冷却器单元21，形成在主冷却器单元21内部的流体通道30，外壁表面22上的冷却区域23 ，除了冷却区域23以外，连续地涂布在外壁面22和内壁面33上的树脂层40。并且与保持与外壁面22热接触的位于冷却区域23的半导体激光元件80。通过除了冷却区域23之外，通过用树脂层40连续地涂覆外壁面22和内壁面33，可以防止在外壁面和内壁面彼此接触的部分附近的腐蚀。

44. 发明授权

US07424044B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07424044B2
公开(公告)日：2008-09-09
申请号：US11350273
申请日：2006-02-09
申请人： Yujin Zheng , Hirofumi Kan
发明人： Yujin Zheng , Hirofumi Kan
IPC分类号： H01S5/00 , H01S3/00
CPC分类号： H01S5/4062 , H01S3/08063 , H01S5/005 , H01S5/14 , H01S5/4068
摘要： The semiconductor laser device 1A has a semiconductor laser array 3 including a plurality of active layers 2 arranged in parallel along a slow direction, and outputs laser beams from the front end face 2a side of the active layers 2. The semiconductor laser device 1A comprises a collimating lens 5 that collimates laser beams L1 outputted from the respective rear end faces 2b of the active layers 2 within a plane orthogonal to the slow axis, and a reflecting mirror 9 that feeds back parts of the laser beams L2 outputted from the collimating lens 5 to the respective active layers 2 via the collimating lens 5.
摘要翻译：半导体激光器件1A具有半导体激光器阵列3，该半导体激光器阵列3包括沿着缓慢的方向平行布置的多个有源层2，并且从有源层2的前端面2的一侧输出激光束。半导体激光器件1 A包括：准直透镜5，其在与慢轴正交的平面内准直从有源层2的各个后端面2b输出的激光束L 1;以及反射镜9，反射镜9反射激光束L 2 通过准直透镜5从准直透镜5输出到各活性层2。

45. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

46. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

47. 发明申请

US20080050856A1 Method for manufacturing silicon device 失效
标题翻译：硅器件制造方法
公开(公告)号：US20080050856A1
公开(公告)日：2008-02-28
申请号：US11892419
申请日：2007-08-22
申请人： Shucheng Chu , Hirofumi Kan
发明人： Shucheng Chu , Hirofumi Kan
IPC分类号： H01L21/00
CPC分类号： H01L33/0054
摘要： A method for manufacturing a silicon device includes steps of: forming a silicon layer 4a that indicates a second conductivity type on a first surface S1a of a silicon substrate 2a that indicates a first conductivity type; and exposing, after the step, a third surface S3a of the silicon layer 4a for a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.
摘要翻译：一种制造硅器件的方法包括以下步骤：在表示第一导电类型的硅衬底2a的第一表面S1a上形成表示第二导电类型的硅层4a; 在步骤之后，将硅层4a的第三表面S 3 a暴露于至少为400℃的氩气气氛中至少30分钟和最多6小时的时间 ℃，最高为900℃，压力最小为4MPa，最大压力为200MPa。

48. 发明申请

US20050045866A1 Photocathode having A1GaN layer with specified Mg content concentration 审中-公开
标题翻译：具有规定Mg含量浓度的AlGaN层的光电阴极
公开(公告)号：US20050045866A1
公开(公告)日：2005-03-03
申请号：US10961142
申请日：2004-10-12
申请人： Hirofumi Kan , Minoru Niigaki , Masashi Ohta , Yasufumi Takagi , Shoichi Uchiyama
发明人： Hirofumi Kan , Minoru Niigaki , Masashi Ohta , Yasufumi Takagi , Shoichi Uchiyama
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/06 , H01J43/08 , H01L29/06
CPC分类号： H01J31/507 , H01J1/34 , H01J40/06 , H01J43/08 , H01J2231/50021
摘要： Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.
摘要翻译：从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此得到具有高量子效率的太阳能型半导体光电阴极1。

49. 发明授权

US09953729B2 Radiation generating apparatus and radiation generating method 有权
公开(公告)号：US09953729B2
公开(公告)日：2018-04-24
申请号：US14348137
申请日：2012-08-08
申请人： Takeshi Watari , Katsunobu Nishihara , Masaru Takagi , Nakahiro Satoh , Toshiyuki Kawashima , Hirofumi Kan
发明人： Takeshi Watari , Katsunobu Nishihara , Masaru Takagi , Nakahiro Satoh , Toshiyuki Kawashima , Hirofumi Kan
IPC分类号： G21B1/03 , G21B3/00 , H05H3/06 , H05G2/00
CPC分类号： G21B3/006 , H05G2/005 , H05G2/006 , H05H3/06
摘要： A radiation generating apparatus comprises a fuel storage unit 20 for storing a mixed liquid 61, a pressure application unit 10 for applying a pressure to the mixed liquid 61, a jet formation unit 30 for forming a jet 61a of the mixed liquid 61, a reaction unit 44 for forming the jet 61a of the mixed liquid 61 therein, a pressure adjustment unit 41 for setting a pressure in the reaction unit 44 lower than an internal pressure of the jet formation unit 30, and a light source unit 45 for irradiating a particle group 63a with laser light L1.

50. 发明授权

US08755103B2 Plasma shutter forming apparatus and forming method 失效
标题翻译：等离子体快门成型装置和成型方法
公开(公告)号：US08755103B2
公开(公告)日：2014-06-17
申请号：US12910089
申请日：2010-10-22
申请人： Masayuki Suzuki , Hiromitsu Kiriyama , Izuru Daito , Hajime Okada , Hironori Sugiyama , Shinichi Matsuoka , Hirofumi Kan
发明人： Masayuki Suzuki , Hiromitsu Kiriyama , Izuru Daito , Hajime Okada , Hironori Sugiyama , Shinichi Matsuoka , Hirofumi Kan
IPC分类号： G02B26/04
CPC分类号： H05H15/00 , A61N2005/1088 , H01S3/005
摘要： A plasma shutter forming apparatus for forming a plasma shutter used in a system configured to generate and accelerate radiations by irradiating a target with a laser pulse and generating a high-density plasma for blocking the laser pulse which is returned as a feedback light to upstream of the system without being absorbed by the high-density plasma, including a plasma shutter generating target, and a plasma shutter triggering laser irradiator, wherein the laser pulse from the plasma shutter triggering laser irradiator is directed to the plasma shutter generating target to generate the high-density plasma and form the plasma shutter, thereby blocking the laser pulse which is returned as the feedback light. Optics are prevented from becoming damaged by feedback light reflecting when generating the high-density plasma in a laser-driven radiation generating system and returning back to the upstream of the laser system.
摘要翻译：一种等离子体快门形成装置，用于形成用于系统的等离子体快门，其被配置为通过用激光脉冲照射目标产生和加速辐射，并产生用于阻挡作为反馈光返回到上游的激光脉冲的高密度等离子体该系统不被高密度等离子体吸收，包括等离子体快门产生靶和等离子体快门触发激光照射器，其中来自等离子体快门触发激光照射器的激光脉冲被引导到等离子体快门产生目标以产生高形成等离子体快门，从而阻挡作为反馈光返回的激光脉冲。在激光驱动辐射发生系统中产生高密度等离子体并返回到激光系统的上游时，防止光反射的反射光被损坏。

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