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41. 发明申请

US20060290333A1 Switching Control Circuit and Self-Excited DC-DC Converter 有权
标题翻译：开关控制电路和自激式DC-DC转换器
公开(公告)号：US20060290333A1
公开(公告)日：2006-12-28
申请号：US11426273
申请日：2006-06-23
申请人： Iwao Fukushi , Tomoaki Nishi , Takashi Noma
发明人： Iwao Fukushi , Tomoaki Nishi , Takashi Noma
IPC分类号： G05F1/573
CPC分类号： H02M3/1588 , H02M1/32 , Y02B70/1466
摘要： A self-excited DC-DC converter comprises a switching element that chops a direct-current input voltage; a smoothing circuit that smoothes the chopped voltage to generate a DC output voltage; a switching control signal generation circuit that generates a switching control signal for the on/off control of the switching element by comparing a feedback voltage of the output voltage and a comparison voltage; an output correction circuit that adjusts the comparison voltage according to an error between the feedback voltage and the reference voltage and, when the output current is in the overcurrent state, reduces the level of the comparison voltage; an overcurrent protection signal generation circuit that, when the output current is in an overcurrent state, generates an overcurrent protection signal for turning off the switching element regardless of the switching control signal; and a delay circuit that delays the overcurrent protection signal. Also, a switching control circuit is provided therein.
摘要翻译：自激式DC-DC转换器包括切断直流输入电压的开关元件; 平滑电路，其使所述斩波电压平滑以产生DC输出电压; 切换控制信号生成电路，通过比较输出电压的反馈电压和比较电压，生成用于开关元件的导通/截止控制的开关控制信号; 输出校正电路，根据反馈电压和参考电压之间的误差调整比较电压，并且当输出电流处于过电流状态时，降低比较电压的电平; 过电流保护信号产生电路，当输出电流处于过电流状态时，不管开关控制信号如何，都产生用于关断开关元件的过电流保护信号; 以及延迟过电流保护信号的延迟电路。另外，在其中设置开关控制电路。

42. 发明授权

US07101735B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07101735B2
公开(公告)日：2006-09-05
申请号：US10696581
申请日：2003-10-30
申请人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
发明人： Takashi Noma , Hiroyuki Shinogi , Akira Suzuki , Yoshinori Seki , Koichi Kuhara , Yukihiro Takao , Hiroshi Yamada
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/3185 , H01L23/481 , H01L24/10 , H01L2221/6834 , H01L2221/68377 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/16 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/00 , H01L2224/05644 , H01L2924/00014 , H01L2224/05655 , H01L2224/05124 , H01L2224/05147
摘要： A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
摘要翻译：将第一玻璃基板通过树脂粘合到其上形成有第一布线的半导体晶片的顶表面。通过树脂将第二玻璃基板结合到半导体晶片的背面。通过第一玻璃基板的一部分从第二玻璃基板的表面开槽而形成V形槽。形成与第一布线连接并延伸到第二玻璃基板的表面的第二布线。通过喷涂在第二布线上形成由有机树脂和光致抗蚀剂层组成的保护膜以提供具有开口的保护膜。通过使用保护膜作为焊接掩模的丝网印刷形成导电端子。可以通过喷涂在第二玻璃基板上形成缓冲材料。

43. 发明申请

US20050275093A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050275093A1
公开(公告)日：2005-12-15
申请号：US11145176
申请日：2005-06-06
申请人： Takashi Noma
发明人： Takashi Noma
IPC分类号： H01L21/60 , H01L21/78 , H01L23/31 , H01L23/48 , H01L23/485 , H01L27/146 , H01L31/0203 , H01L31/0232 , H04N5/225
CPC分类号： H04N5/2253 , H01L23/3114 , H01L24/11 , H01L24/48 , H01L27/14618 , H01L27/14683 , H01L31/0203 , H01L31/02325 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2224/45099 , H01L2924/00 , H01L2924/013
摘要： The invention provides a package type semiconductor device and a manufacturing method thereof where reliability is improved without increasing a manufacturing cost. A resin layer and a supporting member are formed on a top surface of a semiconductor substrate formed with pad electrodes. Then, openings are formed penetrating the resin layer and the supporting member so as to expose the pad electrodes. Metal layers are then formed on the pad electrodes exposed in the openings, and conductive terminals are formed thereon. Finally, the semiconductor substrate is separated into semiconductor dice by dicing. When this semiconductor device is mounted on a circuit board (not shown), the conductive terminals of the semiconductor die and external electrodes of the circuit board are electrically connected with each other.
摘要翻译：本发明提供一种封装型半导体器件及其制造方法，其中提高可靠性而不增加制造成本。树脂层和支撑构件形成在形成有焊盘电极的半导体衬底的顶表面上。然后，形成穿透树脂层和支撑部件的开口，以露出焊盘电极。然后在暴露在开口中的焊盘电极上形成金属层，并在其上形成导电端子。最后，通过切割将半导体衬底分成半导体芯片。当该半导体器件安装在电路板（未示出）上时，半导体管芯的导电端子和电路板的外部电极彼此电连接。

44. 发明授权

US06951494B2 Spacer recovery method and apparatus used during disassembling of an image display apparatus 失效
标题翻译：在拆卸图像显示装置期间使用的间隔物回收方法和装置
公开(公告)号：US06951494B2
公开(公告)日：2005-10-04
申请号：US10462740
申请日：2003-06-17
申请人： Takashi Noma , Toyoko Kobayashi , Taiko Motoi , Hiromitsu Takase , Naoko Miura , Shin Kobayashi
发明人： Takashi Noma , Toyoko Kobayashi , Taiko Motoi , Hiromitsu Takase , Naoko Miura , Shin Kobayashi
IPC分类号： B09B3/00 , B03B9/06 , B09B5/00 , C22B3/04 , C22B7/00 , G02F1/13 , G09F9/00 , H01J9/50 , H01J9/52 , H01J9/00
CPC分类号： H01J9/52 , B03B9/062 , B09B5/00 , H01J2201/3165 , H01J2329/00 , Y02W30/60 , Y02W30/828
摘要： To reuse glass used in a flat panel display, processing suitable for global environment such as processing of separating a lead component must be realized. A disassembly processing method for a flat panel display having a structure in which a face plate and rear plate mainly containing glass are airtightly joined via a frame with frit glass is characterized by including the step of separating the face plate and rear plate joined with the frit glass. The separation step is characterized by separating the face plate and rear plate by cutting, dissolution, or melting.
摘要翻译：为了重复使用在平板显示器中的玻璃，必须实现适合于全球环境的处理，例如分离铅组分的处理。一种平板显示器的拆卸处理方法，其特征在于包括：将面板和主要包含玻璃的后板通过框架与熔结玻璃气密接合的结构的方法，其特征在于，包括以下步骤：将面板和后板与玻璃料玻璃。分离步骤的特征在于通过切割，溶解或熔化分离面板和后板。

45. 发明申请

US20050176235A1 Manufacturing method of semiconductor device 有权
公开(公告)号：US20050176235A1
公开(公告)日：2005-08-11
申请号：US11035399
申请日：2005-01-14
申请人： Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao
发明人： Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao
IPC分类号： H01L21/60 , H01L21/68 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/485 , H01L25/065 , H01L21/44
CPC分类号： H01L24/12 , H01L21/6836 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/12044
摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

46. 发明申请

US20050062146A1 Semiconductor device and method of fabricating semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20050062146A1
公开(公告)日：2005-03-24
申请号：US10945945
申请日：2004-09-22
申请人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
发明人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/485 , H01L23/04
CPC分类号： H01L24/12 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.
摘要翻译：提供了允许简化制造工艺的半导体器件。该半导体器件包括由单一材料构成的第一绝缘膜，其形成为与包括电路的半导体芯片的上表面接触，形成为与第一绝缘膜的上表面接触的第一线和形成为沿着半导体芯片的侧表面和下表面延伸并连接到通过部分去除第一绝缘膜而暴露的第一线的下表面的第二线。

47. 发明授权

US06593950B2 Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device 失效
标题翻译：电子发射装置和电子束发生装置以及采用该装置的成象装置
公开(公告)号：US06593950B2
公开(公告)日：2003-07-15
申请号：US08418093
申请日：1995-04-06
申请人： Ichiro Nomura , Hidetoshi Suzuki , Takashi Noma , Yoshikazu Banno , Rie Ueno , Naoto Nakamura
发明人： Ichiro Nomura , Hidetoshi Suzuki , Takashi Noma , Yoshikazu Banno , Rie Ueno , Naoto Nakamura
IPC分类号： B41J2415
CPC分类号： H01J1/316 , B82Y10/00 , H01J31/127 , H01J2201/3165 , H01J2329/8625 , H01J2329/863
摘要： An electron-emitting device having an electron-emitting region between electrodes on a substrate where the electron-emitting region contains fine particles dispersed therein at an areal occupation ratio of the fine particles ranging from 20% to 75% of the electron-emitting region is disclosed. The other electron-emitting device where the electron-emitting region contains fine particles being arranged at gaps of from 5 Å to 100 Å and having average particle diameter of from 5 Å to 1000 Å is also disclosed. Electron beam-generating apparatus and image-forming apparatus comprise one of the electron-emitting regions and a modulation means for modulating the electron beams emitted from the electron-emitting devices in accordance with information signals.
摘要翻译：电子发射器件在电子发射区域之间的电极之间具有电子发射区域，其中电子发射区域包含分散在其中的微粒子的电子发射区域以占电子发射区域的20％至75％的微小粒子的面积占有比率是披露还公开了其中电子发射区域包含细颗粒的其它电子发射器件，其布置在距离为5埃至100埃的间隔处，平均粒径为5埃至1000埃。电子束产生装置和图像形成装置包括电子发射区域之一和用于根据信息信号调制从电子发射器件发射的电子束的调制装置。

48. 发明授权

US06437424B1 Non-volatile semiconductor memory device with barrier and insulating films 失效
标题翻译：具有阻挡层和绝缘膜的非易失性半导体存储器件
公开(公告)号：US06437424B1
公开(公告)日：2002-08-20
申请号：US09505980
申请日：2000-02-16
申请人： Takashi Noma , Masaji Hara , Kimihide Saito , Ryo Kawai , Yoichi Kanuma , Kazuo Okada
发明人： Takashi Noma , Masaji Hara , Kimihide Saito , Ryo Kawai , Yoichi Kanuma , Kazuo Okada
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324
摘要： A barrier film of a SiON film is formed below an interlayer insulating film which is a single layer film or laminated film of an TEOS film or SOG film covering a floating gate 4 and control gate 6. The SiON film which is good in moisture blocking but poor in coverage is covered with another TEOS film which is better in coverage than the SiON film, thereby improving the barrier property of the barrier film. Such a configuration prevents moisture or H atoms contained in the TEOS film or SOG film from being diffused and trapped by the tunneling oxide film 3, thereby improving the trap-up rate and hence endurance characteristic and extending the operation life of a memory cell.
摘要翻译：在作为覆盖浮栅4和控制栅6的TEOS膜或SOG膜的单层膜或层叠膜的层间绝缘膜的下方形成SiON膜的阻挡膜。覆盖不良覆盖了覆盖率比SiON膜更好的另一种TEOS膜，从而提高了阻挡膜的阻隔性能。这样的结构可防止TEOS膜或SOG膜中含有的水分或H原子被隧道状氧化膜3扩散和捕获，从而提高捕获率，耐久性，延长存储单元的使用寿命。

49. 发明授权

US06281814B1 Data conversion method, data converter, and program storage medium 有权
标题翻译：数据转换方法，数据转换器和程序存储介质
公开(公告)号：US06281814B1
公开(公告)日：2001-08-28
申请号：US09485042
申请日：2000-02-01
申请人： Hideki Sasaoka , Hirohiko Kazato , Takashi Noma
发明人： Hideki Sasaoka , Hirohiko Kazato , Takashi Noma
IPC分类号： H03M700
CPC分类号： G06F17/148
摘要： A peak detecting section 121 detects the maximum values (peaks) of frequency distributions, at intervals of unit times, from the wavelet intensity signal output from an intensity computing section 113. More specifically, giving attention to frequency distributions of the wavelet intensity signal as the transform result obtained by a signal converting section 110 at predetermined time intervals, the peak detecting section 121 detects the peaks (maximum values) of the frequency intensity distributions at intervals of unit times (predetermined time intervals). Changes in various frequency features over time which are contained in the time-series signal obtained by a wavelet transform of the time-series signal can be quantitatively grasped more accurately.
摘要翻译：峰值检测部分121从强度计算部分113输出的小波强度信号中以单位时间间隔检测频率分布的最大值（峰值）。更具体地，注意小波强度信号的频率分布为以预定的时间间隔变换由信号转换部分110获得的结果，峰值检测部分121以单位时间（预定时间间隔）的间隔检测频率强度分布的峰值（最大值）。随时间变化的各种频率特征被包含在通过时间序列信号的小波变换获得的时间序列信号中，可以更精确地定量地掌握。

50. 发明授权

US6033778A Aromatic polyamide bristle 失效
标题翻译：芳香聚酰胺刷毛
公开(公告)号：US6033778A
公开(公告)日：2000-03-07
申请号：US983138
申请日：1998-01-21
申请人： Ryuichi Kakihara , Takashi Noma
发明人： Ryuichi Kakihara , Takashi Noma
IPC分类号： D01F6/60 , D01F6/80 , D02G3/00
CPC分类号： D01F6/605 , Y10T428/2913 , Y10T428/2969
摘要： The present invention provides an aromatic polyamide bristle exhibiting excellent chemical resistance to acid, alkali, etc., and good mechanical properties such as rigidity, strength and modulus and heat-resistance, suitable for industrial applications such as tension member, fishing line and catheter, having a single fiber fineness of 10 to 200 denier, a flatness of 3 or below and mechanical properties characterized by a tensile strength of 15 g/de or above, an elongation at break of 4.0% or below and an initial modulus of 500 g/de or above and formed from an optically isotropic solution.
摘要翻译： PCT No.PCT / JP97 / 01688 Sec。 371日期1998年1月21日 102（e）日期1998年1月21日PCT提交1997年5月20日PCT公布。出版物WO97 / 44510 日期1997年11月27日本发明提供了对酸，碱等具有优异耐化学性的芳香族聚酰胺刷毛，具有良好的机械性能如刚性，强度，模量和耐热性，适用于工业应用如张力构件，钓鱼线和导管，单纤维纤度为10-200旦尼尔，平坦度为3或更低，机械特性为15g / de以上，拉伸断裂强度为4.0％以下，机械性能为4.0％以下，初期模量为500g / de以上，由光学各向同性溶液形成。

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