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41. 发明授权

US06423192B1 Sputtering apparatus and film forming method 失效
标题翻译：溅射装置和成膜方法
公开(公告)号：US06423192B1
公开(公告)日：2002-07-23
申请号：US09697442
申请日：2000-10-27
申请人： Junichi Wada , Hideto Matsuyama , Tomio Katata , Atsuko Sakata , Koichi Watanabe
发明人： Junichi Wada , Hideto Matsuyama , Tomio Katata , Atsuko Sakata , Koichi Watanabe
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/046 , C23C14/3457 , C23C14/35 , H01J37/32697 , H01J37/3405 , H01L21/76877
摘要： A sputtering apparatus includes a process chamber for accommodating a semiconductor wafer. A susceptor is disposed on the bottom of the interior of the process chamber, and a sputter target is disposed at the top of the process chamber. A cylindrical ion reflecting plate is disposed along the inner wall of the process chamber. A lower grounded component, which forms a path along which electrons are released, is disposed below the ion reflecting plate so as to surround the susceptor. A magnet is disposed behind the target outside the process chamber. Negative potentials are applied to the target and semiconductor wafer, and a positive potential is applied to the ion reflecting plate. The magnet forms a closed magnetic field for trapping electrons in a plasma on the surface of the target, and a divergent magnetic field for directing the electrons in the plasma to the lower grounded component.
摘要翻译：溅射装置包括用于容纳半导体晶片的处理室。感受体设置在处理室内部的底部，并且溅射靶设置在处理室的顶部。圆柱形离子反射板沿着处理室的内壁设置。形成电子被释放的路径的下接地部件设置在离子反射板的下方，以围绕基座。磁体设在处理室外部的目标物后面。将负电位施加到靶和半导体晶片，并将正电位施加到离子反射板。磁体形成闭合的磁场，用于捕获目标表面上的等离子体中的电子，以及用于将等离子体中的电子引导到下部接地部件的发散磁场。

42. 发明授权

US5775980A Polishing method and polishing apparatus 失效
标题翻译：抛光方法和抛光装置
公开(公告)号：US5775980A
公开(公告)日：1998-07-07
申请号：US743044
申请日：1996-11-04
申请人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
发明人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
IPC分类号： B24B37/015 , B24B49/14 , B24B57/02 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , B24B5/00
CPC分类号： B24B37/015 , B24B57/02 , H01L21/02074 , H01L21/3212 , H01L21/3213 , H01L21/7684
摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管，抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度代理商

43. 发明授权

US5661345A Semiconductor device having a single-crystal metal wiring 失效
标题翻译：具有单晶金属布线的半导体器件
公开(公告)号：US5661345A
公开(公告)日：1997-08-26
申请号：US353214
申请日：1994-12-01
申请人： Junichi Wada , Hisashi Kaneko , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano
发明人： Junichi Wada , Hisashi Kaneko , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano
IPC分类号： H01L21/3205 , H01L21/285 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/528 , H01L23/532 , H01L23/48
CPC分类号： H01L23/53223 , H01L21/28512 , H01L21/76882 , H01L23/5222 , H01L23/528 , H01L23/53214 , H01L23/53233 , H01L23/53238 , H01L2924/0002
摘要： The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.
摘要翻译：制造半导体器件的方法包括以下步骤：在衬底的表面上形成具有预定图案形状的沟槽; 在与基板的表面反应的同时，在基板上形成金属膜; 并且通过原位退火使金属膜凝聚，其中金属膜在金属膜由于退火而与基板的表面反应之前开始凝聚，同时在金属膜上形成天然氧化物被抑制，通过在预定温度下退火预定时间将金属膜填充到槽中。半导体器件的结构包括绝缘体，其中形成有预定图案形状的沟槽部分和由填充在沟槽部分中的单晶金属制成的电极互连。

44. 发明授权

US5409862A Method for making aluminum single crystal interconnections on insulators 失效
标题翻译：在绝缘子上制作铝单晶互连的方法
公开(公告)号：US5409862A
公开(公告)日：1995-04-25
申请号：US035208
申请日：1993-03-22
申请人： Junichi Wada , Hisashi Kaneko , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano
发明人： Junichi Wada , Hisashi Kaneko , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano
IPC分类号： H01L21/3205 , H01L21/285 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/44
CPC分类号： H01L23/53223 , H01L21/28512 , H01L21/76882 , H01L23/5222 , H01L23/528 , H01L23/53214 , H01L23/53233 , H01L23/53238 , H01L2924/0002
摘要： The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.
摘要翻译：制造半导体器件的方法包括以下步骤：在衬底的表面上形成具有预定图案形状的沟槽; 在与基板的表面反应的同时，在基板上形成金属膜; 并且通过原位退火使金属膜凝聚，其中金属膜在金属膜由于退火而与基板的表面反应之前开始凝聚，同时在金属膜上形成天然氧化物被抑制，通过在预定温度下退火预定时间将金属膜填充到槽中。半导体器件的结构包括绝缘体，其中形成有预定图案形状的沟槽部分和由填充在沟槽部分中的单晶金属制成的电极互连。

45. 发明授权

US08922018B2 Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US08922018B2
公开(公告)日：2014-12-30
申请号：US13427268
申请日：2012-03-22
申请人： Takeshi Ishizaki , Atsuko Sakata , Junichi Wada , Masahiko Hasunuma
发明人： Takeshi Ishizaki , Atsuko Sakata , Junichi Wada , Masahiko Hasunuma
IPC分类号： H01L21/768 , H01L23/532 , H01L23/52 , H01L21/44 , H01L27/10 , H01L21/764 , H01L27/06 , H01L45/00 , H01L27/115 , H01L27/24
CPC分类号： H01L27/101 , H01L21/764 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76852 , H01L21/76867 , H01L21/76877 , H01L21/76886 , H01L21/76888 , H01L23/53261 , H01L23/53266 , H01L27/0688 , H01L27/11524 , H01L27/1157 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer.
摘要翻译：根据一个实施例，半导体器件包括设置在覆盖其中形成元件的半导体衬底的第一层间绝缘膜上的互连，设置在互连的上表面上的覆盖层，以及设置在互连和覆盖互连的第二层间绝缘膜。互连包括高熔点导电层，并且互连的宽度小于盖层的宽度。阻挡膜包括在高熔点导电层中含有元素的化合物。

46. 发明授权

US08410467B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08410467B2
公开(公告)日：2013-04-02
申请号：US12813664
申请日：2010-06-11
申请人： Junichi Wada
发明人： Junichi Wada
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C2213/32 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm.
摘要翻译：根据一个实施例，非易失性存储器件包括第一线，第二线和非易失性存储单元。第一线形成为沿第一方向延伸，并且第二线形成在与第一线的高度不同的高度处并且沿第二方向延伸。非易失性存储单元被布置成以第一线和第二线交叉的毒药的方式保持在第一线和第二线之间。非易失性存储单元包括与非易失性存储层串联连接并具有1千欧欧至1兆欧的电阻的非易失性存储层和限流电阻层。

47. 发明授权

US07994054B2 Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法
公开(公告)号：US07994054B2
公开(公告)日：2011-08-09
申请号：US11896271
申请日：2007-08-30
申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： H01L21/44
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.
摘要翻译：一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

48. 发明授权

US07907040B2 Ignition coil and method for manufacturing the same 有权
标题翻译：点火线圈及其制造方法
公开(公告)号：US07907040B2
公开(公告)日：2011-03-15
申请号：US12257418
申请日：2008-10-24
申请人： Junichi Wada
发明人： Junichi Wada
IPC分类号： H01F27/02 , H01F27/04 , H01F27/29 , H01F38/12 , H01F7/06 , F02P3/02
CPC分类号： H01F38/12 , H01F27/022 , H01F41/005 , Y10T29/4902
摘要： An ignition coil includes a coil body, a primary resin molded body, and a secondary resin molded body. The coil body has a primary coil and a secondary coil. The primary resin molded body has the coil body therein in a fixed relation, and the primary resin molded body has a plurality of exposed side portions that hold the coil body therebetween. The secondary resin molded body is molded to have the coil body and the primary resin molded body embedded therein. The secondary resin molded body is configured to allow the plurality of exposed side portions of the primary resin molded body to be exposed to an exterior of the secondary resin molded body.
摘要翻译：点火线圈包括线圈体，主树脂成型体和二次树脂成形体。线圈体具有初级线圈和次级线圈。主树脂成形体的固定关系具有线圈体，主树脂成型体具有将线圈体保持在其间的多个露出侧部。二次树脂成型体被模制成具有线圈体和主树脂成形体嵌入其中。第二树脂成型体被构造成允许主树脂成型体的多个露出侧部露出到二次树脂成型体的外部。

49. 发明申请

US20080261398A1 Semiconductor device having oxidized metal film and manufacture method of the same 有权
公开(公告)号：US20080261398A1
公开(公告)日：2008-10-23
申请号：US12010372
申请日：2008-01-24
申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： H01L21/44
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

50. 发明申请

US20080090410A1 Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法
公开(公告)号：US20080090410A1
公开(公告)日：2008-04-17
申请号：US11896271
申请日：2007-08-30
申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： H01L21/4763
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.
摘要翻译：一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

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