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    • 46. 发明申请
    • SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE
    • SOI衬底和制造SOI衬底的方法
    • US20120098086A1
    • 2012-04-26
    • US13339427
    • 2011-12-29
    • Shunpei YAMAZAKIMaki TOGAWAYasuyuki ARAI
    • Shunpei YAMAZAKIMaki TOGAWAYasuyuki ARAI
    • H01L21/762H01L29/12
    • H01L21/76254H01L21/84H01L2924/0002H01L2924/00
    • An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.
    • 提供SOI衬底和SOI衬底的制造方法,通过其可以扩大衬底并提高其生产率。 一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤(A); 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤(B); 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤(C),并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底,并且形成单晶硅 进行具有绝缘面的基板上的薄膜。
    • 48. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110193081A1
    • 2011-08-11
    • US13018879
    • 2011-02-01
    • Hiromichi GODOYasuyuki ARAISatohiro OKAMOTOMari TERASHIMAEriko NISHIDAJunpei SUGAO
    • Hiromichi GODOYasuyuki ARAISatohiro OKAMOTOMari TERASHIMAEriko NISHIDAJunpei SUGAO
    • H01L29/78
    • H01L29/7869
    • An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
    • 本发明的目的是提供一种包括氧化物半导体的半导体器件,其中实现了小型化,同时保持了有利的特性。 半导体包括与氧化物半导体层接触的氧化物半导体层,源电极和漏电极,与氧化物半导体层重叠的栅电极,设置在氧化物半导体层和栅电极之间的栅极绝缘层,以及 绝缘层设置成与氧化物半导体层接触。 氧化物半导体层的侧表面与源电极或漏电极接触。 氧化物半导体层的上表面与源电极或漏电极重叠,绝缘层介于氧化物半导体层与源电极或漏电极之间。