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41. 发明专利

JP2006010465A Magnetic field detecting method, and magnetic sensor 有权
标题翻译：磁场检测方法和磁传感器
公开(公告)号：JP2006010465A
公开(公告)日：2006-01-12
申请号：JP2004187124
申请日：2004-06-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO TOSHIE
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor and magnetic field detecting method of high sensitivity and a high S/N ratio.
SOLUTION: A magnetic sensor or the like includes a magnetoresistive effect film 1 with thermal fluctuation intensity of magnetization changed depending on a frequency of an external magnetic field, and with the thermal fluctuation intensity of the magnetization increased in the external magnetic field of a prescribed frequency, a frequency filter 3 provided with a pair of an input terminal and an output terminal, having the input terminal connected to the magnetoresistive effect film, and having its transmittance decreased in the vicinity of the prescribed frequency, and a detector 5 connected to the output terminal of the frequency filter 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供高灵敏度和高S / N比的磁传感器和磁场检测方法。解决方案：磁传感器等包括磁阻效应膜1，其磁化热强度随着外部磁场的频率而变化，并且磁化的热波动强度在外部磁场中增加具有一对输入端子和输出端子的频率滤波器3，其具有连接到磁阻效应膜的输入端子，并且其规定频率附近的透射率降低，并且检测器5连接到频率滤波器3的输出端子。版权所有（C）2006，JPO＆NCIPI

42. 发明专利

JP2005190878A Spin polarization emitter 有权
标题翻译：旋转偏振发射器
公开(公告)号：JP2005190878A
公开(公告)日：2005-07-14
申请号：JP2003432226
申请日：2003-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SATO TOSHIE , MIZUSHIMA KOICHI
IPC分类号： H01J37/06 , H01J1/312 , H01J37/073 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide a spin polarization emitter capable of efficiently emitting a current with a high spin polarization factor and exhibiting good withstand voltage. SOLUTION: This spin polarization emitter comprises a first electrode 1 comprising a metal film, a tunnel insulating film 3 laminated on the first electrode 1, a ferromagnetic laminated film 5 laminated with the first electrode 1 to sandwich the tunnel insulating film 3 and wherein a plurality of fixed magnetization ferromagnetic metal layers and non-magnetic metal layers are laminated and a second electrode 7 comprising a nonmagnetic metal. The surface of the second electrode 7 serves as an electron emission surface. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地发射具有高自旋极化因数并具有良好耐受电压的电流的自旋极化发射器。解决方案：该自旋极化发射器包括：第一电极1，其包括金属膜，层压在第一电极1上的隧道绝缘膜3，与第一电极1层压以夹住隧道绝缘膜3的铁磁层压膜5;以及其中层叠多个固定磁化强磁性金属层和非磁性金属层，以及包括非磁性金属的第二电极7。第二电极7的表面用作电子发射表面。版权所有（C）2005，JPO＆NCIPI

43. 发明专利

JP2003092412A SPIN TRANSISTOR 审中-公开
公开(公告)号：JP2003092412A
公开(公告)日：2003-03-28
申请号：JP2001281043
申请日：2001-09-17
申请人： TOSHIBA CORP
发明人： SATO TOSHIE , MIZUSHIMA KOICHI
IPC分类号： G11C11/16 , H01L21/338 , H01L21/8246 , H01L27/105 , H01L29/06 , H01L29/66 , H01L29/80 , H01L29/812 , H01L29/82 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a spin transistor which has large magnetization dependency of a drain current and is superior in high speed reading. SOLUTION: The spin transistor is provided with a source (S) having a spin polarization part (F1) for forming spin-polarized electrons, a drain (D) having magnetic substance (F2), and a channel (C) for introducing electrons from the source to the drain. A point contact (QP) is formed between the channel and the drain. As a result, a high MR ratio can be obtained so that magnetism detection sensitivity and reading speed can be remarkably improved as compared with the conventional ones.

44. 发明专利

JP2002284353A METHOD AND SYSTEM FOR REPLYING BAGGAGE DELIVERY TIME 失效
公开(公告)号：JP2002284353A
公开(公告)日：2002-10-03
申请号：JP2001085421
申请日：2001-03-23
申请人： TOSHIBA CORP
发明人： SATO TOSHIE
IPC分类号： B65G61/00 , G06Q50/00 , G06Q50/28 , G08G1/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a baggage delivery time replying method capable of replying an arrival time of baggage in response to an inquiry from a user. SOLUTION: This system receives a signal for inquiring the delivery time of certain baggage from a user, detects position of the user, detects a transporting vehicle transporting the corresponding baggage, detects a present position of the transporting vehicle and a prearranged route for traveling thereof, estimates the required time for an arrival to the position of the user on the basis of the present position and the prearranged route, estimates the arrival time by adding that estimated required time to the present time, and replies this arrival estimation time to the user.

45. 发明专利

JP2002270085A FIELD ELECTRON EMISSION ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002270085A
公开(公告)日：2002-09-20
申请号：JP2001066552
申请日：2001-03-09
申请人： TOSHIBA CORP
发明人： MOTOI YUICHI , SATO TOSHIE
IPC分类号： C01B31/02 , C23C16/26 , H01J1/304 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method for evenly fabricating field electron emission elements capable of controlling ON/OFF by low voltage. SOLUTION: The field electron emission element is fabricated by fabricating a catalytic metal layer for carbon nanotubes, an insulating layer, and a laminated film of metal layers in this order on a substrate, providing an opening exposing the catalytic metal layer for carbon nanotubes by photolithography and dry etching, and developing carbon nanotubes. A hole opening an emitter is fabricated in an insulator barrier layer by fabricating a columnar resist structure to be used as a sacrifice layer on the catalytic metal layer for carbon nanotubes fabricated on the substrate, depositing an insulator and then carrying out surface polishing.

46. 发明专利

JPH0489396A METHOD FOR GROWING THIN OXIDE FILM 失效
公开(公告)号：JPH0489396A
公开(公告)日：1992-03-23
申请号：JP20127990
申请日：1990-07-31
申请人： TOSHIBA CORP
发明人： EGUCHI KAZUHIRO , SATO TOSHIE
IPC分类号： C01G29/00 , C01G1/00 , C30B29/22
摘要： PURPOSE:To grow a single-phase thin Bi-Sr-Ca-Cu-O film having 2:2:2:3 ratio of Bi:Sr:Ca:Cu by adding Sb to a thin Bi-Sr-Ca-Cu-O film. CONSTITUTION:Organometallic compds. contg. Bi, Sr, Ca, Cu and Sb and oxygen or a compd. contg. oxygen are introduced into a vacuum vessel contg. a set substrate and a thin Bi-Sr-Ca-Cu-Sb-O film is formed on the substrate. By this method, a single-phase crystalline thin Bi-Sr-Ca-Cu-O film made of only 2223 phase having 110K transition temp. is obtd. and can be used for an electronic device and a circuit.

47. 发明专利

JPH03146405A FORMATION OF OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH03146405A
公开(公告)日：1991-06-21
申请号：JP28497189
申请日：1989-11-02
申请人： TOSHIBA CORP
发明人： EGUCHI KAZUHIRO , NAKANISHI TAKATOSHI , SATO TOSHIE
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C23C16/30 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To impart excellent surface flatness to the film at a low deposition temp. by introducing a raw gas contg. desired metallic elements and O2 such as furan into a reaction vessel contg. a substrate and subjecting the materials to chemical vapor growth. CONSTITUTION:The substrate 11 of SrTiO3, etc., is arranged in the reaction vessel 10, gaseous He is introduced from a high pressure vessel 21, and the vessel 10 is evacuated to about 20 Torr by a pump 15. The raw gaseous O2 such as furan (C4H4O) or tetrahydrofuran (C4H8O) is then introduced from a high pressure vessel 22, the substrate 11 is heated to about 850 deg.C by a heater 14, and flow-controlled gaseous He is supplied from the vessel 21 to the Y, Ba, Cu, etc., in the metallic reaction vessels 41-43 and the raw O2 vessel 45. The vapors of the raw materials obtained by the heating are deposited on the substrate 11 for about one hour while switching to the reaction vessel 10 side by passage switching valves 51-53 and 55, and an oxide superconducting thin film 12 of YBa2Cu3OX, etc., having about 1mum thickness is formed and produced.

48. 发明专利

JPH03120364A PRODUCTION OF OXIDE THIN FILM SUBSTRATE AND OXIDE THIN FILM 失效
公开(公告)号：JPH03120364A
公开(公告)日：1991-05-22
申请号：JP25494189
申请日：1989-09-29
申请人： TOSHIBA CORP
发明人： NAKANISHI TAKATOSHI , EGUCHI KAZUHIRO , SATO TOSHIE
IPC分类号： C01B13/14 , C01G1/00 , C23C16/30 , C23C16/40 , H01B12/06 , H01B13/00 , H01L21/205 , H01L21/84 , H01L39/24
摘要： PURPOSE:To produce an oxide thin film excellent in surface flatness by heating a semiconductor substrate to a specified temp. while preventing its deterioration, then forming a buffer layer of a fluoride and introducing a gas contg. an organometallic compd. and oxygen. CONSTITUTION:A GaAs crystal substrate 11 is arranged in a reaction furnace 10 to be evacuated by a rotary pump 15. A gas contg. arsenic such as AsH3 is introduced into the furnace 10 from a high-pressure vessel 22, and the substrate 11 is heated by a heater 13 to the deposition temp. of an oxide thin film. As a result, the substrate 11 is not deteriorated. The supply of the gaseous AsH3 is then stopped, and immediately an organometallic compd. raw gas contg. fluorine and metal such as Ca(C2HO5F6)2 is introduced from a raw material vessel 41. A buffer layer consisting of the thin-film crystal of a metal fluoride such as CaF2 is deposited on the substrate. An org. compd. raw gas contg. Bi, Sr, Ca, Cu, etc., is then introduced into the furnace 10 from raw material vessels 42,... and a gas contg. oxygen from a high-pressure vessel 23. Consequently, a flat oxide thin film of a high-temp. superconductor based on BiSrCaCuO is deposited on the substrate 11.

49. 发明专利

JPH035397A VAPOR GROWTH METHOD FOR THIN OXIDE CRYSTAL FILM 失效
公开(公告)号：JPH035397A
公开(公告)日：1991-01-11
申请号：JP13888489
申请日：1989-05-31
申请人： TOSHIBA CORP
发明人： NAKANISHI TAKATOSHI , EGUCHI KAZUHIRO , SATO TOSHIE
IPC分类号： C30B25/14 , C23C16/30 , C23C16/40 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a high quality crystalline thin film having superior flatness by forming a thin crystal film made of the same substance as a substrate as a base film on the substrate by vapor growth before a thin oxide crystal film is formed on the substrate by vapor growth. CONSTITUTION:Gaseous starting material for a base film is introduced into a reactor contg. a substrate and a thin crystal film made of the same substance as the substrate is formed as a base film on the substrate by vapor growth. Gaseous starting material for a thin oxide crystal film is then introduced into the reactor and a thin oxide crystal film is formed on the base film by vapor growth.

50. 发明专利

JPH02210822A VAPOR GROWTH APPARATUS 失效
公开(公告)号：JPH02210822A
公开(公告)日：1990-08-22
申请号：JP3132889
申请日：1989-02-10
申请人： TOSHIBA CORP
发明人： EGUCHI KAZUHIRO , NAKANISHI TAKATOSHI , SATO TOSHIE
IPC分类号： H01L21/205
摘要： PURPOSE:To transport organometallic material gas whose vapor pressure is low to a reaction furnace with excellent reproducibility by arranging the total part or a main part between a ram material vessel and the reaction furnace in a oven, and heating said part. CONSTITUTION:A piping system constituted of pipes from raw material gas cylinders 41-43 to a reaction pipe 10, valves, joints, etc., is arranged in a oven 60, and uniformly heated. As a result, the temperature of the whole piping system is uniformly kept higher than that of the raw material gas cylinders 41-43, thereby preventing the attaching of organometallic material to the piping system, the choking of the piping system, etc. By this constitution, the organometallic raw material gas can be supplied from the raw material gas cylinders 41-43 to the reaction pipe with excellent reproducibility, and the reproducibility and the controllability of the deposition film can be improved.

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