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    • 43. 发明授权
    • Method of preparing thin film of superconductor
    • 制备超导体薄膜的方法
    • US5206214A
    • 1993-04-27
    • US833576
    • 1992-02-10
    • Naoji FujimoriKeizo HaradaShuji YazuTetsuji Jodai
    • Naoji FujimoriKeizo HaradaShuji YazuTetsuji Jodai
    • C30B23/02H01L39/24
    • H01L39/2435C30B23/02C30B29/22C30B29/225Y10S505/731
    • A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared from an oxide containing Ba, Y, and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form by sputtering a superconducting thin film on a substrate at a temperature of 600.degree. to 800.degree. C. in an atmosphere having total gas pressure of 1.times.10.sup.-2 to 5.times.10.sup.-2 Torr. and containing Ar and O.sub.2 with an O.sub.2 content of 5 to 80 vol. %. The thin film thus formed is subjected to heat treatment at a temperature of 600.degree. to 930.degree. C. for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4.degree. C./min. The film forming surface of the substrate is chosen from the (100) surface or the (110) surface of a single crystal substrate which is lattice-matched with the (100) surface or the (110) surface of crystalline Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-n, where n represents a number in the range 0.ltoreq.n
    • 一种通过溅射在衬底上制备超导体薄膜的方法。 通过将Cu / Y的原子比为2.5〜3.5,Ba / Y为1.8〜2.2的Ba,Y,Cu的氧化物制成的靶用于在600℃的温度下在基板上溅射超导薄膜 至800℃,总气体压力为1×10 -2至5×10 -2乇。 并含有O含量为5至80体积%的Ar和O 2。 %。 将这样形成的薄膜在600〜930℃的温度下进行1〜30小时的热处理。 热处理后的薄膜以不高于4℃/分钟的速度冷却。 基板的成膜表面选自与晶体Y1Ba2Cu3O7-n的(100)表面或(110)表面晶格匹配的单晶衬底的(100)表面或(110)表面,其中 n表示0