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41. 发明申请

US20060066388A1 System and method for applying within-die adaptive body bias 审中-公开
标题翻译：应用模内自适应体偏差的系统和方法
公开(公告)号：US20060066388A1
公开(公告)日：2006-03-30
申请号：US10953865
申请日：2004-09-30
申请人： James Tschanz , Stephen Tang , Siva Narendra , Vivek De
发明人： James Tschanz , Stephen Tang , Siva Narendra , Vivek De
IPC分类号： H03K3/01
CPC分类号： G05F3/205
摘要： A controller for providing within-die body bias includes a signal generator for generating different bias signals and a selector to route the bias signals to one or more specific types of transistors within the sections of the die. The controller may further include a plurality of secondary body bias generators, each disposed in a respective one of the die sections for translating the signals from the generator into local bias values. Through this controller, adaptive body bias techniques may be implemented which improve the bin split and overall performance of fabricated processors or other types of circuits formed on the die.
摘要翻译：用于提供管芯内部偏置的控制器包括用于产生不同偏置信号的信号发生器和选择器，以将偏置信号路由到管芯内部的一个或多个特定类型的晶体管。控制器还可以包括多个次级偏置发生器，每个次级体偏置发生器分别设置在相应的一个管芯部分中，用于将来自发电机的信号转换成局部偏置值。通过该控制器，可以实现自适应体偏置技术，其改进了在芯片上形成的制造的处理器或其他类型的电路的分割和整体性能。

42. 发明申请

US20050068077A1 Local bias generator for adaptive forward body bias 审中-公开
标题翻译：局部偏置发生器用于自适应前向偏置
公开(公告)号：US20050068077A1
公开(公告)日：2005-03-31
申请号：US10673283
申请日：2003-09-30
申请人： James Tschanz , Stephen Tang , Victor Zia , Badarinath Kommandur , Siva Narendra , Vivek De
发明人： James Tschanz , Stephen Tang , Victor Zia , Badarinath Kommandur , Siva Narendra , Vivek De
IPC分类号： G05F3/20 , G05F3/26 , H03L7/06
CPC分类号： G05F3/262 , G05F3/205
摘要： A local bias generator generates forward body bias that tracks variations in a supply voltage of a functional block containing one or more circuits having field-effect transistors. The bias is generated using a single-stage source-follower formed from a pair of matched transistors. In operation, the transistors convert a first bias signal into a second bias signal based on a difference between the supply voltage and a reference voltage. The first bias signal and reference voltage may be generated by a central bias generator.
摘要翻译：本地偏置发生器产生正向偏置，其跟踪包含具有场效应晶体管的一个或多个电路的功能块的电源电压的变化。使用由一对匹配晶体管形成的单级源极跟随器产生偏置。在操作中，晶体管基于电源电压和参考电压之间的差异将第一偏置信号转换成第二偏置信号。第一偏置信号和参考电压可以由中心偏置发生器产生。

43. 发明授权

US08767482B2 Apparatuses, devices and methods for sensing a snapback event in a circuit 有权
标题翻译：用于感测电路中的快速恢复事件的装置，装置和方法
公开(公告)号：US08767482B2
公开(公告)日：2014-07-01
申请号：US13213018
申请日：2011-08-18
申请人： Jeremy Hirst , Hernan Castro , Stephen Tang
发明人： Jeremy Hirst , Hernan Castro , Stephen Tang
IPC分类号： G11C7/00
CPC分类号： G11C13/004 , G11C7/06 , G11C7/12 , G11C13/0004 , G11C13/0038 , G11C13/0059 , G11C13/0061 , G11C13/0069 , G11C2013/0083 , G11C2207/063
摘要： Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
摘要翻译：本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用在电路中。例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。

44. 发明申请

US20130044539A1 APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT 有权
标题翻译：用于在电路中感测到反应事件的装置，装置和方法
公开(公告)号：US20130044539A1
公开(公告)日：2013-02-21
申请号：US13213018
申请日：2011-08-18
申请人： Jeremy Hirst , Hernan Castro , Stephen Tang
发明人： Jeremy Hirst , Hernan Castro , Stephen Tang
IPC分类号： G11C11/00 , G11C7/10 , G05B24/02 , G11C7/00
CPC分类号： G11C13/004 , G11C7/06 , G11C7/12 , G11C13/0004 , G11C13/0038 , G11C13/0059 , G11C13/0061 , G11C13/0069 , G11C2013/0083 , G11C2207/063
摘要： Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
摘要翻译：本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用在电路中。例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。

45. 发明授权

US07986549B1 Apparatus and method for refreshing or toggling a phase-change memory cell 有权
标题翻译：用于刷新或切换相变存储器单元的装置和方法
公开(公告)号：US07986549B1
公开(公告)日：2011-07-26
申请号：US12345462
申请日：2008-12-29
申请人： Stephen Tang , DerChang Kau
发明人： Stephen Tang , DerChang Kau
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0033 , G11C13/0064 , G11C13/0069 , G11C16/3418 , G11C2013/0076
摘要： An apparatus and a method for refreshing or toggling a phase-change memory cell are described. The apparatus includes a voltage ramp element coupled to the phase-change memory cell and provided for controlling voltage across the phase-change memory cell. A current control element is coupled to the phase-change memory cell and provided for controlling current through the phase-change memory cell. A current sensor element is coupled to the phase-change memory cell. A write-back timer and control element is coupled to the current sensor element and to the current control element.
摘要翻译：描述了用于刷新或切换相变存储器单元的装置和方法。该装置包括耦合到相变存储器单元并被提供用于控制跨相变存储器单元的电压的电压斜坡元件。电流控制元件耦合到相变存储器单元，并被提供用于控制通过相变存储单元的电流。电流传感器元件耦合到相变存储器单元。回写计时器和控制元件耦合到电流传感器元件和电流控制元件。

46. 发明申请

US20100149856A1 Writing Memory Cells Exhibiting Threshold Switch Behavior 有权
标题翻译：编写记忆体细胞展示阈值开关行为
公开(公告)号：US20100149856A1
公开(公告)日：2010-06-17
申请号：US12333518
申请日：2008-12-12
申请人： Stephen Tang
发明人： Stephen Tang
IPC分类号： G11C7/00 , G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/009
摘要： A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.
摘要翻译：可以以不需要单独的后编程验证周期的方式编程展示阈值开关特性的存储器单元，例如相变存储器。特别地，电路可用于以确定电池单元是否已经达到期望阈值电压的方式将编程脉冲施加到单元。如果电池没有达到所需的阈值电压，则它接收另一个编程脉冲。如果有的话，它不会再接收另一个编程脉冲。因此，通过在电池上施加不超过电池的阈值电压的电压，在一些实施例中可以消除对单独验证周期的需要。

47. 发明申请

US20120026786A1 WRITE OPERATION FOR PHASE CHANGE MEMORY 有权
标题翻译：写入操作相位变化记忆
公开(公告)号：US20120026786A1
公开(公告)日：2012-02-02
申请号：US12846775
申请日：2010-07-29
申请人： Hernan A. Castro , Jeremy Hirst , Stephen Tang
发明人： Hernan A. Castro , Jeremy Hirst , Stephen Tang
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2213/77
摘要： Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell.
摘要翻译：本文公开的实施例可以涉及控制耦合到相变存储器单元的电容元件的放电以在相变存储器单元中产生指定状态。

48. 发明授权

US07876607B2 Reading threshold switching memory cells 有权
标题翻译：读取阈值切换存储单元
公开(公告)号：US07876607B2
公开(公告)日：2011-01-25
申请号：US12333530
申请日：2008-12-12
申请人： Stephen Tang
发明人： Stephen Tang
IPC分类号： G11C11/00 , G11C7/02
CPC分类号： G11C13/003 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0061 , G11C2013/005 , G11C2013/0054 , G11C2213/76
摘要： Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.
摘要翻译：使用跨越阈值切换单元的电压来感测单元的状态，而不是感测通过单元的电流，可能导致更快的读取。在一些实施例中，可以通过使用耦合在该单元两端的电容器来减小读取导通状态期间的电流消耗。

49. 发明授权

US08320172B2 Write operation for phase change memory 有权
标题翻译：相变存储器的写操作
公开(公告)号：US08320172B2
公开(公告)日：2012-11-27
申请号：US12846775
申请日：2010-07-29
申请人： Hernan A. Castro , Jeremy Hirst , Stephen Tang
发明人： Hernan A. Castro , Jeremy Hirst , Stephen Tang
IPC分类号： G11C11/50
CPC分类号： G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2213/77
摘要： Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell.
摘要翻译：本文公开的实施例可以涉及控制耦合到相变存储器单元的电容元件的放电以在相变存储器单元中产生指定状态。

50. 发明授权

US08031516B2 Writing memory cells exhibiting threshold switch behavior 有权
标题翻译：编写显示阈值开关行为的存储单元
公开(公告)号：US08031516B2
公开(公告)日：2011-10-04
申请号：US12333518
申请日：2008-12-12
申请人： Stephen Tang
发明人： Stephen Tang
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/009
摘要： A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.
摘要翻译：可以以不需要单独的后编程验证周期的方式编程展示阈值开关特性的存储器单元，例如相变存储器。特别地，电路可用于以确定电池单元是否已经达到期望阈值电压的方式将编程脉冲施加到单元。如果电池没有达到所需的阈值电压，则它接收另一个编程脉冲。如果有的话，它不会再接收另一个编程脉冲。因此，通过在电池上施加不超过电池的阈值电压的电压，在一些实施例中可以消除对单独验证周期的需要。

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