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41. 发明授权

US4689093A Process for the preparation of photoelectromotive force member 失效
标题翻译：光电动力部件制备工艺
公开(公告)号：US4689093A
公开(公告)日：1987-08-25
申请号：US843304
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , H01L21/205 , H01L31/18
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： Process for preparing a photoelectromotive force member by forming a photoelectric conversion layer on a substrate by: (a) generating an active species by the action of microwave energy on a substance in a space leading to a film forming space containing a substrate; (b) generating a precursor by the action of microwave energy on a substance in a space situated within the space for generating the active species; and (c) introducing the resulting active species and precursor into the film forming space to chemically react them and to form the photoelectric conversion layer.
摘要翻译：通过以下步骤在基板上形成光电转换层来制备光电动势部件的方法：（a）通过微波能量作用于通向包含基板的成膜空间的空间中的物质产生活性物质; （b）通过微波能量作用于产生活性物质的空间内的物质的物质产生前体; 和（c）将所得到的活性物质和前体引入成膜空间以使其发生化学反应并形成光电转换层。

42. 发明授权

US4853251A Process for forming deposited film including carbon as a constituent element 失效
标题翻译：用于形成包含碳作为构成元素的沉积膜的工艺
公开(公告)号：US4853251A
公开(公告)日：1989-08-01
申请号：US831411
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/043 , G03G5/082 , G03G5/10 , H01L21/205 , H01L31/075 , H01L31/20
CPC分类号： G03G5/08214 , C23C16/30 , C23C16/452 , G03G5/0433 , G03G5/08278 , G03G5/08285 , G03G5/102 , G03G5/104 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/931
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

43. 发明授权

US4726963A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4726963A
公开(公告)日：1988-02-23
申请号：US61003
申请日：1987-06-09
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/48 , H01L21/205 , B05D3/06
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/482 , C23C16/483 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）分开反应，然后用光能照射它们，从而允许物质彼此反应，从而在基底上形成沉积膜。

44. 发明授权

US5244698A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US5244698A
公开(公告)日：1993-09-14
申请号：US685165
申请日：1991-04-12
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/26 , C23C16/30 , C23C16/452
CPC分类号： C23C16/452 , C23C16/24 , C23C16/26 , C23C16/30
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将含有硅和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到其中容纳基材的膜形成空间中其与所述活性物质（A）彼此分离地化学相互反应，然后向其提供放电能量，从而允许物质彼此化学反应，以在衬底上形成沉积膜。

45. 发明授权

US5178904A Process for forming deposited film from a group II through group VI metal hydrocarbon compound 失效
标题翻译：用于从第II组至第VI族金属烃化合物形成沉积膜的方法
公开(公告)号：US5178904A
公开(公告)日：1993-01-12
申请号：US507001
申请日：1990-04-10
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： B05D7/24 , C23C16/452 , H01L21/365
CPC分类号： C23C16/452 , B05D7/24
摘要： A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.
摘要翻译：在不存在等离子体的情况下在基板上形成沉积膜的工艺是通过在活化空间中产生能够与化合物进行化学反应的活化物质，形成和引入到具有基底的成膜空间中，活化物质和成膜化合物。用于成膜的化合物具有通式RnMm，其中R是烃基，M是选自II-IV族之一的元素，n是等于M的化合价的整数，m是等于化合价的正整数的成像空间远离激活空间。活化物质与用于成膜的化合物发生化学反应，足以产生能够直接形成沉积膜的所述成膜化合物的化学物质。

46. 发明授权

US5019887A Non-single crystalline photosensor with hydrogen and halogen 失效
标题翻译：具有氢和卤素的非单晶光电传感器
公开(公告)号：US5019887A
公开(公告)日：1991-05-28
申请号：US596428
申请日：1990-10-11
申请人： Mitsuyuki Niwa , Takayoshi Arai , Isamu Shimizu , Eiji Takeuchi , Tsutomu Murakami , Shunichi Ishihara
发明人： Mitsuyuki Niwa , Takayoshi Arai , Isamu Shimizu , Eiji Takeuchi , Tsutomu Murakami , Shunichi Ishihara
IPC分类号： H01L31/0392 , H01L31/09 , H01L31/20
CPC分类号： H01L31/204 , H01L31/03921 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photosensor has a photoconductive member. The photoconductive member has a structure comprising a laminated product consisting of functional thin films superposed on one another. The laminated product comprises at least two functional thin films. The functional thin film containing 10 atomic % or less of hydrogen. The band gaps and conduction types and/or conductivity of the functional thin films are controlled to provide high photo sensitivity.
摘要翻译：光电传感器具有感光元件。感光体具有包括由彼此重叠的功能性薄膜组成的层压产品的结构。层压产品包括至少两个功能薄膜。含有10原子％以下的氢的功能性薄膜。控制功能薄膜的带隙和导电类型和/或导电性以提供高的光敏性。

47. 发明授权

US4818564A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4818564A
公开(公告)日：1989-04-04
申请号：US921462
申请日：1986-10-22
申请人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/42 , C23C16/44 , C23C16/452 , H01L21/205 , B05D5/06 , B05D5/12 , C23C16/00
CPC分类号： C23C16/452 , H01L21/0242 , H01L21/02532 , H01L21/0262
摘要： A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：形成沉积膜的方法包括将用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的气态卤素氧化剂引入反应空间以在其间形成化学接触从而形成多个的含有前体的前体在激发态下，并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

48. 发明授权

US4812325A Method for forming a deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4812325A
公开(公告)日：1989-03-14
申请号：US921197
申请日：1986-10-21
申请人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu
IPC分类号： G03G5/082 , B05D5/06 , B05D5/12 , C23C16/00
CPC分类号： G03G5/08278
摘要： A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.
摘要翻译：形成沉积膜的方法包括将反应空间引入反应空间，该反应空间含有用于形成沉积膜的气体原料的基底（a），（b）气态氧化剂，和（c）含有价态的气态物质电子控制器组件; 在其间形成化学接触以形成包含处于激发态的前体的多种前体; 以及用所述前体中的至少一种在所述基底上形成沉积膜。

49. 发明授权

US4772486A Process for forming a deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4772486A
公开(公告)日：1988-09-20
申请号：US113414
申请日：1987-10-27
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , B05D3/06
CPC分类号： C23C16/452 , C23C16/301 , C23C16/306
摘要： A process for forming a deposited film, which comprises introducing, into a film forming space for forming said deposited film on a substrate, compounds A-1 and B-1 respectively represented by following general formulae and employed as raw materials for said deposited film:R.sub.n M.sup.1.sub.m (A-1)A.sup.1.sub.a B.sub.b (B-1)and active species capable of effecting a chemical reaction with at least one of said compounds, thereby forming a deposited film on said substrate, wherein m is a positive integer equal to the valence of R or a multiple thereof, n is a positive integer equal to the valence of M.sup.1 or a multiple thereof, M.sup.1 stands for an element of the group III of the periodic table, R stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group, a is a positive integer equal to the valence of B or a multiple thereof, b is a positive integer equal to the valence of A.sup.1 or a multiple thereof, A.sup.1 stands for an element of the group V of the periodic table, and B stands for a hydrogen atom (H), a halogen atom (X) or a hydrocarbon group.
摘要翻译：一种用于形成沉积膜的方法，其包括在基板上将用于形成所述沉积膜的成膜空间引入分别由以下通式表示的化合物A-1和B-1，并用作所述沉积膜的原料： R a1b（B-1）和能够与所述化合物中的至少一种进行化学反应的活性物质，从而在所述基材上形成沉积膜，其中m是等于R的化合价的正整数或其倍数，n为等于M1的化合价的正整数或其倍数，M1表示周期表第III族的元素，R表示氢原子（H），卤素原子（X ）或烃基时，a为等于B的化合价的正整数或其倍数，b为与Al的化合价或其倍数相同的正整数，A1表示周期性的第Ⅴ族的元素表和B代表氢原子（H），卤素（X）或烃基。

50. 发明授权

US4728528A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4728528A
公开(公告)日：1988-03-01
申请号：US943071
申请日：1986-12-18
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/48 , H01L21/205 , B05D3/06
CPC分类号： C23C16/482 , C23C16/22 , C23C16/483 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）分开反应，用光能照射，从而允许物质彼此反应，从而在基底上形成沉积膜。

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