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41. 发明授权

US06723488B2 Photoresist composition for deep UV radiation containing an additive 失效
标题翻译：用于含有添加剂的深紫外线辐射的光刻胶组合物
公开(公告)号：US06723488B2
公开(公告)日：2004-04-20
申请号：US10037161
申请日：2001-11-07
申请人： Takanori Kudo , Ralph R. Dammel , Munirathna Padmanaban
发明人： Takanori Kudo , Ralph R. Dammel , Munirathna Padmanaban
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/40 , Y10S430/106
摘要： The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.
摘要翻译：本发明涉及对深紫外线辐射敏感的光致抗蚀剂组合物，特别是在100-200纳米（nm）范围内敏感的正性工作光致抗蚀剂。光致抗蚀剂组合物包含：a）不溶于碱性水溶液且包含至少一种酸不稳定基团的聚合物，此外，聚合物基本上是非酚类的，b）能够在辐射时产生酸的化合物，c ）减少电子和离子对光致抗蚀剂图像的影响的添加剂。

42. 发明授权

US06486282B1 Polymer suitable for photoresist compositions 有权
标题翻译：适用于光刻胶组合物的聚合物
公开(公告)号：US06486282B1
公开(公告)日：2002-11-26
申请号：US09854312
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： C08F12042
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译：本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。

43. 发明授权

US6042992A Bottom antireflective coatings through refractive index modification by anomalous dispersion 失效
$Bottom antireflective coatings through refractive index modification by anomalous dispersion$
标题翻译：底部抗反射涂层通过异常色散的折射率修饰
公开(公告)号：US6042992A
公开(公告)日：2000-03-28
申请号：US811806
申请日：1997-03-06
申请人： Ralph R. Dammel , Robert N. Norwood
发明人： Ralph R. Dammel , Robert N. Norwood
IPC分类号： H01L21/027 , G03F7/004 , G03F7/022 , G03F7/09 , G03F7/11 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/00
CPC分类号： G03F7/091
摘要： The invention provides a process for the generation of an antireflective bottom layer with effective reduction of substrate reflectivity and swing curve effects in lithographic applications. It involves the use of a suitably selected monomeric and/or polymeric dye which brings the real part of the refractive index into a range which is optimal for the suppression of reflection-related effects. The refractive index change is effected via anomalous dispersion, i.e., by utilizing changes in the real part of the refractive index caused by the bottom layer's absorption.
摘要翻译：本发明提供了一种用于产生抗反射底层的方法，其有效降低了光刻应用中的基板反射率和摆动曲线效应。它涉及使用适当选择的单体和/或聚合染料，其使折射率的实部成为抑制反射相关效应最佳的范围。折射率变化通过异常色散实现，即通过利用由底层吸收引起的折射率的实部的变化来实现。

44. 发明授权

US5510420A Matarix resin for high-temperature stable photoimageable compositions 失效
标题翻译： Matarix树脂用于高温稳定的可光成像组合物
公开(公告)号：US5510420A
公开(公告)日：1996-04-23
申请号：US353000
申请日：1994-12-09
申请人： Ralph R. Dammel , Owen B. Evans
发明人： Ralph R. Dammel , Owen B. Evans
IPC分类号： C08F8/00 , C08F257/00 , C08L61/10 , G03F7/023 , G03F7/033
CPC分类号： G03F7/0233 , C08F8/00
摘要： The present invention relates to a novel matrix resin for high-temperature stable photoimageable compositions, in the form of a graft copolymer of monomeric or lower oligomeric hydroxyphenyl units grafted onto a polymer backbone containing reactive sites, to a process for its production and to its use as a matrix resin in photoimageable compositions either in a pure form or in admixture with other polymeric materials.
摘要翻译：本发明涉及一种用于高温稳定可光成像组合物的新型基质树脂，其形式为接枝到含有反应性位点的聚合物骨架上的单体或低级低聚羟苯基单元的接枝共聚物，其生产方法及其用途作为可光成像组合物中的基质树脂，以纯形式或与其它聚合物材料混合。

45. 发明授权

US08084186B2 Hardmask process for forming a reverse tone image using polysilazane 有权
标题翻译：使用聚硅氮烷形成反向色调图像的硬掩模工艺
公开(公告)号：US08084186B2
公开(公告)日：2011-12-27
申请号：US12368720
申请日：2009-02-10
申请人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
发明人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/0234 , H01L21/0337 , H01L21/31138 , H01L21/3125 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成可选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

46. 发明申请

US20100203299A1 Hardmask Process for Forming a Reverse Tone Image Using Polysilazane 有权
标题翻译：使用聚硅氮烷形成反向色调图像的硬掩模工艺
公开(公告)号：US20100203299A1
公开(公告)日：2010-08-12
申请号：US12368720
申请日：2009-02-10
申请人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
发明人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
IPC分类号： B32B3/10 , G03F7/20
CPC分类号： G03F7/40 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/0234 , H01L21/0337 , H01L21/31138 , H01L21/3125 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成任选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

47. 发明申请

US20090317739A1 Composition for Coating over a Photoresist Pattern 有权
标题翻译：用于在光刻胶图案上涂覆的组合物
公开(公告)号：US20090317739A1
公开(公告)日：2009-12-24
申请号：US12141307
申请日：2008-06-18
申请人： Muthiah Thiyagarajan , Yi Cao , Sung Eun Hong , Ralph R. Dammel
发明人： Muthiah Thiyagarajan , Yi Cao , Sung Eun Hong , Ralph R. Dammel
IPC分类号： G03F7/004 , C08F26/02 , C08K5/17 , C08K5/05
CPC分类号： C09D133/14 , C09D133/066 , C09D139/00 , G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.
摘要翻译：本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有至少一个具有烷基氨基的单元的聚合物，其中该单元具有结构（1），其中R 1至R 5独立地选自氢和C 1 至C6烷基，W为C1至C6烷基。本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

48. 发明授权

US06852465B2 Photoresist composition for imaging thick films 有权
标题翻译：用于成像厚膜的光刻胶组合物
公开(公告)号：US06852465B2
公开(公告)日：2005-02-08
申请号：US10393925
申请日：2003-03-21
申请人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
发明人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
IPC分类号： G03F7/004 , G03F7/016 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0226 , G03F7/0048 , G03F7/0166
摘要： The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
摘要翻译：本发明涉及特别适用于成膜厚膜的光敏光致抗蚀剂组合物，其包含成膜碱溶性树脂，光活性化合物和表面活性剂，其含量范围为约2000ppm至约14,000ppm 全光刻胶。优选地，光致抗蚀剂膜具有大于20微米的厚度。本发明还提供了一种用于涂覆和成像本发明的感光组合物的方法。

49. 发明授权

US06686429B2 Polymer suitable for photoresist compositions 失效
标题翻译：适用于光刻胶组合物的聚合物
公开(公告)号：US06686429B2
公开(公告)日：2004-02-03
申请号：US09854312
申请日：2001-05-11
申请人： Ralph R. Dammel , Raj Sakamuri
发明人： Ralph R. Dammel , Raj Sakamuri
IPC分类号： C08F12042
CPC分类号： G03F7/0395 , C08F222/32 , C08F232/08 , G03F7/0046 , G03F7/0382
摘要： The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.
摘要翻译：本发明涉及包含至少一种衍生自含有至少一个氰基官能团和至少一个非芳族环单元的烯属不饱和化合物的单元的新型聚合物。当用于在深紫外区域敏感的光致抗蚀剂组合物中时，该新型聚合物特别有用。

50. 发明授权

US06365322B1 Photoresist composition for deep UV radiation 有权
标题翻译：用于深紫外线辐射的光刻胶组合物
公开(公告)号：US06365322B1
公开(公告)日：2002-04-02
申请号：US09455872
申请日：1999-12-07
申请人： Munirathna Padmanaban , Ralph R. Dammel
发明人： Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
摘要翻译：本发明涉及在深紫外区域敏感的新型光致抗蚀剂组合物，其中光致抗蚀剂性能在光致抗蚀剂的加工环境中不受碱性污染物的不利影响。新型光致抗蚀剂包括聚合物，光活性化合物，碱性化合物，其是在光致抗蚀剂的曝光波长下基本上不吸收的锍或碘鎓化合物和溶剂组合物。本发明还涉及一种用于在深紫外区域中成像这种光致抗蚀剂的方法。

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