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41. 发明申请

US20070154740A1 MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE HEAD AND MAGNETIC RECORDING-REPRODUCING APPARATUS 有权
标题翻译：磁电装置，磁电头和磁记录重放装置
公开(公告)号：US20070154740A1
公开(公告)日：2007-07-05
申请号：US11685490
申请日：2007-03-13
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译：磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括磁化钉扎层，非磁性中间层和无磁化层。磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方晶体结构。

42. 发明授权

US07218484B2 Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US07218484B2
公开(公告)日：2007-05-15
申请号：US10659299
申请日：2003-09-11
申请人： Susumu Hashimoto , Katsuhiko Koui , Masashi Sahashi , Hitoshi Iwasaki
发明人： Susumu Hashimoto , Katsuhiko Koui , Masashi Sahashi , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/3906 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
摘要翻译：磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。相分离层设置在该对电极之间。相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。

43. 发明申请

US20070092639A1 Method for manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US20070092639A1
公开(公告)日：2007-04-26
申请号：US11583968
申请日：2006-10-20
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： B05D5/12
CPC分类号： C23C8/02 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/34 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/42 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F41/305
摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.
摘要翻译：提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。

44. 发明授权

US07196877B2 Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus 有权
标题翻译：磁阻元件，磁阻磁头和磁再现装置
公开(公告)号：US07196877B2
公开(公告)日：2007-03-27
申请号：US10743130
申请日：2003-12-23
申请人： Masatoshi Yoshikawa , Masayuki Takagishi , Tomomi Funayama , Kohichi Tateyama , Hitoshi Iwasaki , Hideaki Fukuzawa
发明人： Masatoshi Yoshikawa , Masayuki Takagishi , Tomomi Funayama , Kohichi Tateyama , Hitoshi Iwasaki , Hideaki Fukuzawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/313 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3254 , H01F10/3268
摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.
摘要翻译：磁阻元件包括具有磁化钉扎层，磁化自由层和非磁性中间层的磁阻膜。磁化被钉扎层的磁化方向基本上固定在外部磁场中，磁化自由层的磁化方向被配置为在外部磁场中改变，并且形成在磁化钉扎层和无磁化之间的非磁性中间层并且具有第一非金属中间层/金属中间层/第二非金属中间层的堆叠结构。磁阻元件还包括耦合到磁阻膜的一对电极，并且被配置为在基本垂直于磁阻膜的表面的方向上提供电流。

45. 发明授权

US07116527B1 Magnetoresistance effect device having hard magnetic film structural body 失效
标题翻译：具有硬磁性膜结构体的磁阻效应器件
公开(公告)号：US07116527B1
公开(公告)日：2006-10-03
申请号：US08940020
申请日：1997-09-29
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译：含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层）并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

46. 发明授权

US07071522B2 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus 失效
公开(公告)号：US07071522B2
公开(公告)日：2006-07-04
申请号：US10887080
申请日：2004-07-09
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

47. 发明申请

US20060098353A1 Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory 有权
公开(公告)号：US20060098353A1
公开(公告)日：2006-05-11
申请号：US11269878
申请日：2005-11-09
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Katsuhiko Koui , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Katsuhiko Koui , Hitoshi Iwasaki
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

48. 发明申请

US20060050444A1 Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory 失效
标题翻译：磁阻元件，磁头，磁记录装置和磁存储器
公开(公告)号：US20060050444A1
公开(公告)日：2006-03-09
申请号：US11215971
申请日：2005-09-01
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3903
摘要： A magnetoresistive element includes at least three metallic magnetic layers, at least two connection layers provided between the at least three metallic magnetic layers, each having an insulating layer and current confined paths including a metallic magnetic material penetrating the insulating layer, and electrodes which supply a current perpendicularly to a plane of a stacked film of the metallic magnetic layers and the connection layers.
摘要翻译：磁阻元件包括至少三个金属磁性层，设置在至少三个金属磁性层之间的至少两个连接层，每个具有绝缘层和包含透过绝缘层的金属磁性材料的电流限制路径，以及提供电流垂直于金属磁性层和连接层的叠层膜的平面。

49. 发明授权

US07008702B2 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07008702B2
公开(公告)日：2006-03-07
申请号：US09973235
申请日：2001-10-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.
摘要翻译：磁阻效应元件包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层和非磁性导电层。第一铁磁层在零施加磁场下具有相对于第二铁磁层的磁化方向成一定角度的磁化方向。第二铁磁层具有彼此反铁磁耦合的第一和第二铁磁膜和位于第一和第二铁磁膜之间并与其接触的反铁磁耦合膜。第一铁磁层的磁化在磁场信号中自由旋转。非磁性导电层设置成与第一铁磁层接触，使得第一铁磁层设置在非磁性高导电层和非磁性间隔层之间。第一铁磁层的膜厚度在0.5纳米到4.5纳米之间。

50. 发明申请

US20050201020A1 Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录和再现装置
公开(公告)号：US20050201020A1
公开(公告)日：2005-09-15
申请号：US11074643
申请日：2005-03-09
申请人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/26 , H01F10/32 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译：磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性间隔层和无磁化层。

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