会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060139973A1
    • 2006-06-29
    • US11261925
    • 2005-10-31
    • Takashi InukaiYukihiro Urakawa
    • Takashi InukaiYukihiro Urakawa
    • H02H7/10
    • H01L27/0255
    • A semiconductor device has a semiconductor element connected to an input/output terminal and a reference voltage terminal, a first rectifier element connected between the input/output terminal and the reference voltage terminal, which performs rectifier operation to prevent a voltage of the input/output terminal from becoming higher than a voltage of the reference voltage terminal by a predetermined value or more, and a second rectifier element connected between the input/output terminal and the reference voltage terminal, which performs rectifier operation to prevent the voltage of the reference voltage terminal from becoming higher than the voltage of the input/output terminal by a predetermined value or more.
    • 半导体器件具有连接到输入/输出端子和参考电压端子的半导体元件,连接在输入/输出端子和参考电压端子之间的第一整流器元件,其执行整流器操作以防止输入/输出的电压 端子变得高于参考电压端子的电压预定值以上,以及连接在输入/输出端子和参考电压端子之间的第二整流器元件,其执行整流器操作以防止参考电压端子的电压 从高于输入/输出端子的电压达预定值以上。
    • 47. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • 半导体集成电路
    • US20120218000A1
    • 2012-08-30
    • US13461983
    • 2012-05-02
    • Takashi Inukai
    • Takashi Inukai
    • H03K19/094
    • G01R31/2884H03K5/133
    • Each of a plurality of inverters includes: a first transistor having one end connected to a first terminal; and a second transistor having one end connected to a second terminal and the other end connected to the other end of the first transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit become conductive when a pre-charge signal has a first state to pre-charge the other end of the first transistors, and become non-conductive when the pre-charge signal has a second state.
    • 多个逆变器中的每一个包括:第一晶体管,其一端连接到第一端子; 以及第二晶体管,其一端连接到第二端子,另一端连接到第一晶体管的另一端。 包括在逆变器中的第一晶体管以位于逆变器链电路的输入端侧的奇数或偶数次数为单位变为导通,当预充电信号具有预充电的另一端的第一状态时 第一晶体管,并且当预充电信号具有第二状态时变得不导通。
    • 48. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • 半导体集成电路
    • US20110193594A1
    • 2011-08-11
    • US12886685
    • 2010-09-21
    • Takashi Inukai
    • Takashi Inukai
    • H03K19/094
    • G01R31/2884H03K5/133
    • Each of a plurality of inverters includes: a first transistor having one end connected to a first terminal; and a second transistor having one end connected to a second terminal and the other end connected to the other end of the first transistor.The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit become conductive when a pre-charge signal has a first state to pre-charge the other end of the first transistors, and become non-conductive when the pre-charge signal has a second state. The first transistors other than the pre-charge transistors become non-conductive when the pre-charge signal has the first state and become conductive when the pre-charge signal has the second state.
    • 多个逆变器中的每一个包括:第一晶体管,其一端连接到第一端子; 以及第二晶体管,其一端连接到第二端子,另一端连接到第一晶体管的另一端。 包括在逆变器中的第一晶体管以位于逆变器链电路的输入端侧的奇数或偶数次数为单位变为导通,当预充电信号具有预充电的另一端的第一状态时 第一晶体管,并且当预充电信号具有第二状态时变得不导通。 当预充电信号具有第一状态并且当预充电信号具有第二状态时变为导通时,预充电晶体管以外的第一晶体管变得不导通。
    • 50. 发明授权
    • Oxide superconductor Josephson junction and fabrication method therefor
    • 氧化物超导体约瑟夫逊结及其制造方法
    • US4316785A
    • 1982-02-23
    • US202640
    • 1980-10-31
    • Minoru SuzukiToshiaki MurakamiTakahiro InamuraTakashi InukaiYouichi Enomoto
    • Minoru SuzukiToshiaki MurakamiTakahiro InamuraTakashi InukaiYouichi Enomoto
    • H01L39/22H01L39/24
    • H01L39/2493H01L39/223Y10S505/816Y10S505/817Y10T29/49014
    • A tunneling Josephson junction is disclosed in which first and second superposed superconducting electrode layers are formed of thin films of oxide superconducting materials having a perovskite structure of BaPB.sub.1-x Bi.sub.x O.sub.3. A barrier layer interposed between these superconducting electrode layers is a thin film of long service life which is stable and breakdown free under heat cycles from room temperature to ultra low temperatures. This film is made of an oxide with perovskite structure which has the same crystal structure and thermal expansion coefficient as those of the first and second superconducting layers for functioning as an insulator or a semiconductor. The oxide with perovskite structure may be BaSnO.sub.3, Ba.sub.1-y Sr.sub.y Pb.sub.1-x Bi.sub.x O.sub.3 (wherein 0.ltoreq.x.ltoreq.0.3, y>0.3) or BaPb.sub.1-x (A.sub.1-y Bi.sub.y)O.sub.3 (wherein A is at least one member selected from the group consisting of V, Nb, Ta and Sb; 0.1.ltoreq.x.ltoreq.0.3; and 0.ltoreq.y.ltoreq.0.5).
    • 公开了一种隧道式约瑟夫逊结,其中第一和第二叠加超导电极层由具有BaPB1-xBixO3的钙钛矿结构的氧化物超导材料的薄膜形成。 介于这些超导电极层之间的阻挡层是使用寿命长的薄膜,其在从室温到超低温的热循环下是稳定的和无分解的。 该膜由具有钙钛矿结构的氧化物制成,其具有与用作绝缘体或半导体的第一和第二超导层的晶体结构和热膨胀系数相同的晶体结构和热膨胀系数。 具有钙钛矿结构的氧化物可以是BaSnO3,Ba1-ySryPb1-xBixO3(其中0≤x≤0.3,y> 0.3)或BaPb1-x(A1-yBiy)O3(其中A是选自 由V,Nb,Ta和Sb组成的组;0.1≤x≤0.3;和0≤y≤0.5)。