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    • 42. 发明申请
    • PLASMA PROCESSING APPARATUS AND SHOWER HEAD
    • 等离子体加工设备和淋浴头
    • US20110067815A1
    • 2011-03-24
    • US12888664
    • 2010-09-23
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • H01L21/3065
    • H01J37/3244H01J37/3266
    • A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
    • 一种等离子体处理装置,包括安装在用于处理基板的处理室内的淋浴喷头,面对用于将基板安装在其上的安装台,并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔,其形成为穿过所述淋浴喷头,从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元,其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。
    • 43. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME
    • 基板处理装置和基板处理方法
    • US20100243607A1
    • 2010-09-30
    • US12750015
    • 2010-03-30
    • Takeshi OhseShinji HimoriJun AbeNorikazu Yamada
    • Takeshi OhseShinji HimoriJun AbeNorikazu Yamada
    • C23F1/08C23F1/00
    • H01J37/02H01J37/32091H01J37/32146H01J37/32165
    • A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    • 基板处理方法使用基板处理装置,其包括用于容纳基板的室,用于安装基板的下电极,用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态,则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时,施加单元。