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41. 发明授权

US07718497B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07718497B2
公开(公告)日：2010-05-18
申请号：US12130296
申请日：2008-05-30
申请人： Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
发明人： Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
IPC分类号： H01L21/8234
CPC分类号： H01L21/823864 , H01L21/823814
摘要： A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions.
摘要翻译：半导体器件制造方法包括：在栅电极的侧壁表面上形成侧壁间隔物; 在有源区中形成一对第二导电型源区和漏区; 用金属膜覆盖半导体层的顶表面，器件隔离区，侧壁间隔物和栅电极; 通过使金属膜与半导体层和栅极电极反应，部分地降低源极和漏极区域和栅电极的电阻; 并且通过使用易于蚀刻金属膜和侧壁间隔物的未反应部分的蚀刻剂同时去除金属膜和侧壁间隔物的未反应部分，同时几乎不蚀刻器件隔离区域，栅电极的电阻减少部分和电阻 - 源区和漏区的部分。

42. 发明授权

US07717218B2 Swiveling work machine 有权
标题翻译：回转作业机
公开(公告)号：US07717218B2
公开(公告)日：2010-05-18
申请号：US11371341
申请日：2006-03-08
申请人： Takanori Matsumoto , Fumiki Sato , Shizuo Shimoie , Yoshihiro Kato , Kenzo Koga
发明人： Takanori Matsumoto , Fumiki Sato , Shizuo Shimoie , Yoshihiro Kato , Kenzo Koga
IPC分类号： E02F9/00
CPC分类号： E02F9/08 , E02F9/163
摘要： A swiveling work machine includes a traveling apparatus, a swivel base mounted on the traveling apparatus to be pivotable about a vertical axis, a hood disposed at a rear portion of the swivel base, the hood accommodating therein an engine, a support frame being disposed across over the engine, and a ROPS having a front end thereof fixed to the swivel base and a rear end thereof fixed to an upper portion of the support frame. The support frame includes a front leg member disposed on one lateral side of the ROPS, the front leg member extending to vicinity of a position forwardly of the swivel base.
摘要翻译：旋转作业机包括行走装置，安装在行进装置上的旋转基座，可绕垂直轴线转动，设置在旋转底座后部的发动机罩，容纳在其中的发动机，支撑框架横跨并且ROPS具有前端固定在旋转底座上，后端固定在支撑框架的上部。支撑框架包括设置在ROPS的一个侧面上的前腿构件，前腿构件延伸到旋转底座的前方的位置附近。

43. 发明申请

US20080299728A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080299728A1
公开(公告)日：2008-12-04
申请号：US12130296
申请日：2008-05-30
申请人： Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
发明人： Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
IPC分类号： H01L21/8236
CPC分类号： H01L21/823864 , H01L21/823814
摘要： A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions.
摘要翻译：半导体器件制造方法包括：在栅电极的侧壁表面上形成侧壁间隔物; 在有源区中形成一对第二导电型源区和漏区; 用金属膜覆盖半导体层的顶表面，器件隔离区，侧壁间隔物和栅电极; 通过使金属膜与半导体层和栅极电极反应，部分地降低源极和漏极区域和栅电极的电阻; 并且通过使用易于蚀刻金属膜和侧壁间隔物的未反应部分的蚀刻剂同时去除金属膜和侧壁间隔物的未反应部分，同时几乎不蚀刻器件隔离区域，栅电极的电阻减少部分和电阻 - 源区和漏区的部分。

44. 发明申请

US20080268655A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080268655A1
公开(公告)日：2008-10-30
申请号：US11794325
申请日：2005-11-29
申请人： Glenn Gale , Yoshihiro Hirota , Yusuke Muraki , Genji Nakamura , Masato Kushibiki , Naoki Shindo , Akitaka Shimizu , Shigeo Ashigaki , Yoshihiro Kato
发明人： Glenn Gale , Yoshihiro Hirota , Yusuke Muraki , Genji Nakamura , Masato Kushibiki , Naoki Shindo , Akitaka Shimizu , Shigeo Ashigaki , Yoshihiro Kato
IPC分类号： H01L21/469 , H01L21/00
CPC分类号： H01L21/28123 , H01L21/31111 , H01L21/31144 , H01L21/32139 , Y10S438/931
摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.
摘要翻译：本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

45. 发明申请

US20080197434A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20080197434A1
公开(公告)日：2008-08-21
申请号：US12101607
申请日：2008-04-11
申请人： Yoshihiro Kato , Katsumi Okayama , Kaoru Kobayashi , Tetsuya Yamamoto , Minoru Ikarashi
发明人： Yoshihiro Kato , Katsumi Okayama , Kaoru Kobayashi , Tetsuya Yamamoto , Minoru Ikarashi
IPC分类号： H01L23/552 , H01L29/82
CPC分类号： H01L23/49575 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: a substrate; a magnetic random access memory mounted on the substrate, the magnetic random access memory including a memory element having a magnetized pinned layer with fixed direction of magnetization and a magnetic layer with changeable direction of magnetization stacked on one another; another element mounted on the substrate; and a pair of magnetic shielding layers which magnetically shield the memory element, the magnetic shielding layers located relatively above and below the memory element and within a region corresponding to an area occupied by the memory element.
摘要翻译：一种磁存储器件，其中MRAM元件与大的外部磁场磁屏蔽。磁存储器件包括：基片; 安装在基板上的磁性随机存取存储器，所述磁性随机存取存储器包括具有固定磁化方向的磁化钉扎层和具有可变方向磁化的磁性层彼此叠置的存储元件; 安装在基板上的另一元件; 以及一对磁屏蔽层，其对存储元件进行磁屏蔽，磁屏蔽层位于相对于存储元件的上方和下方并且在对应于存储元件所占据的区域的区域内。

46. 外观设计

USD555677S1 Cabin for work machine 有权
标题翻译：工作机舱
公开(公告)号：USD555677S1
公开(公告)日：2007-11-20
申请号：US29259046
申请日：2006-05-01
申请人： Junta Kuwae , Yoshihiro Kato , Yoshitaka Matsubara , Shizuo Shimoie , Kenzo Koga , Takanori Matsumoto , Fumiki Sato
设计人： Junta Kuwae , Yoshihiro Kato , Yoshitaka Matsubara , Shizuo Shimoie , Kenzo Koga , Takanori Matsumoto , Fumiki Sato

47. 发明申请

US20070158027A1 Plasma treatment device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070158027A1
公开(公告)日：2007-07-12
申请号：US11702075
申请日：2007-02-05
申请人： Makoto Aoki , Hikaru Yoshitaka , Yoshihiro Kato , Shigeo Ashigaki , Syoichi Abe
发明人： Makoto Aoki , Hikaru Yoshitaka , Yoshihiro Kato , Shigeo Ashigaki , Syoichi Abe
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32633
摘要： In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).
摘要翻译：在平行板式等离子体处理装置（1）中，挡板（28）装配在室（2）的顶板（2b）和侧壁（2a）之间。挡板（28）将等离子体限制在室（2）的上部，并且同时构成返回电流返回到高频电源（27）的返回路径。流经挡板（28）的回流电流通过腔室（2）的顶板（2b）返回到高频电源（27）。

48. 发明申请

US20060045543A1 Electromagnetism suppressing material, electromagnetism suppressing device, and electronic appliance 审中-公开
标题翻译：电磁抑制材料，电磁抑制装置和电子设备
公开(公告)号：US20060045543A1
公开(公告)日：2006-03-02
申请号：US11185879
申请日：2005-07-21
申请人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
发明人： Yoshihiro Kato , Yoshinori Ito , Katsumi Okayama , Kaoru Kobayashi , Masaki Orihashi , Makoto Suzuki , Takashi Miyazaki
IPC分类号： G03G15/00
CPC分类号： H05K9/0075
摘要： An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.
摘要翻译：电磁抑制材料具有增加的电磁抑制效果，可以灵活地形成各种形状，并且便宜。电磁抑制装置使用电磁抑制材料，电子设备使用电磁抑制材料或电磁抑制装置。电磁抑制材料是具有电极性的液体材料和/或凝胶材料。

49. 发明授权

US06992155B2 Method for producing magnetic particle, magnetic particle and magnetic material 有权
标题翻译：磁粉，磁粉和磁性材料的制造方法
公开(公告)号：US06992155B2
公开(公告)日：2006-01-31
申请号：US10245046
申请日：2002-09-17
申请人： Katsumi Okayama , Kaoru Kobayashi , Koichiro Inomata , Satoshi Sugimoto , Yoshihiro Kato
发明人： Katsumi Okayama , Kaoru Kobayashi , Koichiro Inomata , Satoshi Sugimoto , Yoshihiro Kato
IPC分类号： C08F4/42 , C08K3/10 , C08K3/18 , B32B15/02 , B32B15/08
CPC分类号： B82Y30/00 , B22F1/0018 , B22F1/0059 , B22F9/24 , B22F9/305 , B22F2998/00 , B82Y25/00 , B82Y40/00 , C22C32/0094 , H01F1/0054 , H01F41/30 , H01F41/301 , Y10S977/777 , Y10S977/783 , Y10T428/12146 , Y10T428/254 , Y10T428/256 , Y10T428/257 , Y10T428/29 , Y10T428/2991 , Y10T428/2998 , B22F3/02
摘要： A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.
摘要翻译：形成用于吸收电磁波的磁性材料的磁性颗粒的制造方法包括将有机金属络合物或金属盐与链状聚合物混合并将该混合物溶解在溶剂中的步骤（步骤S1）。将混合物的温度升至反应温度（步骤S2），在反应温度下进行反应（步骤S3）; 并形成具有由有机金属配合物或金属盐形成的各微细颗粒的周围被链状聚合物包围并在反应后回收形成的磁性颗粒的结构的磁性颗粒（步骤S4）。磁性颗粒具有纳米结构，成为吸收电磁波的磁性材料。这样的磁性颗粒是通过湿反应产生的。因此，通过一次反应可以产生更大量的磁性颗粒。

50. 发明授权

US06337463B1 Method of making through hole with laser, copper-clad laminate suitable for making hole, and auxiliary material for making hole 有权
标题翻译：用激光制作通孔的方法，适合制作孔的覆铜层压板，以及用于制作孔的辅助材料
公开(公告)号：US06337463B1
公开(公告)日：2002-01-08
申请号：US09271897
申请日：1999-03-18
申请人： Morio Gaku , Nobuyuki Ikeguchi , Yasuo Tanaka , Yoshihiro Kato
发明人： Morio Gaku , Nobuyuki Ikeguchi , Yasuo Tanaka , Yoshihiro Kato
IPC分类号： B23K2600
CPC分类号： H05K3/0038 , B23K26/18 , H05K1/0373 , H05K3/427 , H05K2201/0112 , H05K2201/0215 , H05K2201/0323 , H05K2203/1383
摘要： A method of making a small-diameter through hole having high reliability with regard to a hole wall at a high rate with the energy of a high-output carbon dioxide gas laser without pre-making any hole in a copper foil, forming or disposing a coating or a sheet of an organic substance containing 3 to 97% by volume of at least one powder selected from the group consisting of a metal compound powder, a carbon powder and metal powder which have a melting point of at least 900° C. and a bond energy of at least 300 KJ/mol on at least a copper foil surface to be irradiated with the carbon dioxide gas laser, and irradiating a surface thereof with necessary pulses of the carbon dioxide gas laser to form the penetration hole, and an auxiliary material for use when a penetration hole is made in the copper-clad laminate with a carbon dioxide gas laser, the auxiliary material being a coating or a sheet of an organic substance containing 3 to 97% by volume of at least one powder selected from the group consisting of a metal compound powder, a carbon powder and metal powder which have a melting point of at least 900° C. and a bond energy of at least 300 KJ/mol.
摘要翻译：一种制造小孔直径通孔的方法，其具有高孔率的孔壁，高速率地输出高输出二氧化碳气体激光器的能量，而不在铜箔中预先制造任何孔，形成或布置包含或含有3至97体积％的至少一种选自熔点为900℃以上的金属化合物粉末，碳粉末和金属粉末的粉末的有机物的片材，以及至少在300KJ / mol的键能上至少要用二氧化碳气体激光器照射的铜箔表面，并用二氧化碳气体激光器的必要脉冲照射其表面以形成贯通孔，辅助在用二氧化碳气体激光器在覆铜层压板中形成贯通孔时使用的材料，辅助材料是含有3〜97体积％的至少一种粉末的涂层或片材，所述粉末选自 G 该组合物由金属化合物粉末，碳粉末和金属粉末组成，其熔点至少为900℃，结合能为至少300KJ / mol。

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