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41. 发明授权

US07363876B2 Multi-core transformer plasma source 失效
标题翻译：多核变压器等离子体源
公开(公告)号：US07363876B2
公开(公告)日：2008-04-29
申请号：US10768607
申请日：2004-01-30
申请人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
发明人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
IPC分类号： C23C16/00 , C23F1/00 , H01L21/3065
CPC分类号： H01J37/32431
摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.
摘要翻译：使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

42. 发明授权

US06869880B2 In situ application of etch back for improved deposition into high-aspect-ratio features 失效
标题翻译：回蚀刻的原位应用可以改善沉积到高纵横比特征
公开(公告)号：US06869880B2
公开(公告)日：2005-03-22
申请号：US10057014
申请日：2002-01-24
申请人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
发明人： Padmanabhan Krishnaraj , Pavel Ionov , Canfeng Lai , Michael Santiago Cox , Shamouil Shamouilian
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C30B25/10 , H01L21/311 , H01L21/316 , H01L21/768 , H01L21/20
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/509 , C30B25/105 , H01J37/32935 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31612 , H01L21/76837
摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
摘要翻译：提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

43. 发明授权

US06557248B1 Method of fabricating an electrostatic chuck 失效
标题翻译：制造静电卡盘的方法
公开(公告)号：US06557248B1
公开(公告)日：2003-05-06
申请号：US09087332
申请日：1998-05-29
申请人： Shamouil Shamouilian , Manoocher Birang , John F. Cameron , Chandra Deshpandey , Alfred Goldspeil , Ron Northrup , Semyon Sherstinsky , Sasson Someth
发明人： Shamouil Shamouilian , Manoocher Birang , John F. Cameron , Chandra Deshpandey , Alfred Goldspeil , Ron Northrup , Semyon Sherstinsky , Sasson Someth
IPC分类号： H01R4300
CPC分类号： C23C16/45521 , C23C16/4586 , H01L21/67103 , H01L21/6831 , H01L21/6833 , H02N13/00 , Y10T29/49117 , Y10T279/23
摘要： A method of fabricating an electrostatic member 33 for holding a substrate 45 in a process chamber 80 containing erosive process gas. The method comprises the steps of forming an electrostatic member 33 comprising an insulator or dielectric layer 35 covering an electrically conductive layer, and shaping the electrostatic member 33 to form a dielectric covered electrode and an electrical connector 55 attached to the dielectric covered electrode 50 to conduct charge to the dielectric covered electrode 50.
摘要翻译：一种制造静电部件33的方法，用于将基板45保持在包含腐蚀性处理气体的处理室80中。该方法包括以下步骤：形成包括覆盖导电层的绝缘体或电介质层35的静电部件33，并且使静电部件33成形以形成介电覆盖电极和连接到电介质被覆电极50的电连接器55 充电到介电覆盖电极50。

44. 发明授权

US06432282B1 Method and apparatus for supplying electricity uniformly to a workpiece 有权
公开(公告)号：US06432282B1
公开(公告)日：2002-08-13
申请号：US09518182
申请日：2000-03-02
申请人： Shamouil Shamouilian , Anada H. Kumar , Donald J. Olgado , Joseph J. Stevens , Ricardo Leon , Jon Clinton
发明人： Shamouil Shamouilian , Anada H. Kumar , Donald J. Olgado , Joseph J. Stevens , Ricardo Leon , Jon Clinton
IPC分类号： B23H704
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D21/12
摘要： The present invention relates to a device that supplies electricity to a substrate. In one embodiment, the device includes multiple contacts, a current sensor, and a current regulator. The current sensor is attached to each of the plurality of contacts to sense their electric current. A current regulator controls current applied to each of the multiple contacts in response to the current sensor. In another embodiment, a compliant ridge is formed about the periphery of each contact to seal the contact from undesired chemicals.

45. 发明授权

US5646814A Multi-electrode electrostatic chuck 失效
标题翻译：多电极静电卡盘
公开(公告)号：US5646814A
公开(公告)日：1997-07-08
申请号：US276010
申请日：1994-07-15
申请人： Shamouil Shamouilian , Samuel Broydo , Manoocher Birang
发明人： Shamouil Shamouilian , Samuel Broydo , Manoocher Birang
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6875 , H01L21/6831 , H01L21/6833
摘要： A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).
摘要翻译：描述了用于在处理期间保持硅晶片等基板（42）的多电极静电卡盘（20）。静电卡盘（20）包括（i）第一电极（22），（ii）第二电极（24）和（iii）具有下部分（26a）的绝缘体（26），中间部分（26b）和上部（26c）。绝缘体（26）的下部（26a）位于第一电极（22）的下面，并且具有适于将卡盘（20）放置在处理室（41）中的支撑件（44）上的底表面（28）。绝缘体（26）的中间部分（26b）位于第一和第二电极（22），（24）之间。绝缘体（26）的上部（26c）在第二电极（24）上，并且具有适于保持基板（42）的顶表面（30）。第一和第二电极（22,24）可以具有单极或双极结构。在操作中，卡盘（20）被放置在处理室（41）中的支撑件（44）上，使得卡盘（20）的底表面（28）搁置在支撑件（44）上。基板（42）被放置在卡盘（20）的顶表面（30）上。当卡盘（20）的第一电极（22）相对于支撑件（44）被电偏置时，第一静电力将卡盘（20）保持在支撑件（44）上。当卡盘（20）的第二电极（24）相对于放置在卡盘（20）上的基板（42）电气偏置时，第二静电力将基板（42）保持在卡盘（20）上。

46. 发明授权

US5592358A Electrostatic chuck for magnetic flux processing 失效
标题翻译：静磁卡盘用于磁通加工
公开(公告)号：US5592358A
公开(公告)日：1997-01-07
申请号：US276841
申请日：1994-07-18
申请人： Shamouil Shamouilian , John F. Cameron , Chandra Deshpandey , Yuh-Jia Su
发明人： Shamouil Shamouilian , John F. Cameron , Chandra Deshpandey , Yuh-Jia Su
IPC分类号： H02N13/00 , H01L21/683
CPC分类号： H01L21/6831 , H01L21/6833 , Y10T29/49117
摘要： An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.
摘要翻译：用于将基板42保持在包含磁通43的处理室40中的静电卡盘20包括具有适于在其上支撑基板42的上表面的基座22。其中具有电极24的绝缘体26位于基座22上。包括铁磁材料的磁分路器34（i）位于基座22上，或（ii）在绝缘体26中，或（iii）直接在下方，并且与基座22相邻。

47. 发明授权

US5533923A Chemical-mechanical polishing pad providing polishing unformity 失效
标题翻译：化学机械抛光垫提供抛光不整合
公开(公告)号：US5533923A
公开(公告)日：1996-07-09
申请号：US419573
申请日：1995-04-10
申请人： Shamouil Shamouilian , Daniel O. Clark
发明人： Shamouil Shamouilian , Daniel O. Clark
IPC分类号： B24B37/26 , B24B1/00 , B23D11/00
CPC分类号： B24B37/26
摘要： In accordance with the present invention, a polishing pad useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness of the polishing pad. The conduits, preferably tubulars, are constructed from a first material which is different from a second material used as a support matrix. The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60.degree. to about 120.degree. with the working surface of the polishing pad. In the most preferred embodiment of the present invention, the conduits pass all the way through the thickness of the polishing pad and are sized to permit the flow of polishing slurry, reactive etchant material, heat transfer medium, and/or lubricant from a supply device through the conduits to the working surface of the polishing pad (at least a portion of which is in contact or near contact with the article to be polished).
摘要翻译：根据本发明，公开了一种用于抛光含半导体衬底的抛光垫。抛光垫被构造成包括穿过抛光垫的至少一部分并且优选穿过抛光垫的整个厚度的导管。导管（优选管状）由与用作支撑基体的第二材料不同的第一材料构成。导管定位在支撑基体内，使得导管的纵向中心线与抛光垫的工作表面形成约60°至约120°的角度。在本发明的最优选实施例中，导管一直通过抛光垫的厚度，其尺寸设计成允许来自供给装置的抛光浆料，反应性蚀刻剂材料，传热介质和/或润滑剂的流动通过导管移动到抛光垫的工作表面（其至少一部分与待抛光的物品接触或接近接触）。

48. 发明申请

US20070022958A1 Abatement of fluorine gas from effluent 审中-公开
标题翻译：从排出物中减少氟气
公开(公告)号：US20070022958A1
公开(公告)日：2007-02-01
申请号：US11410882
申请日：2006-04-24
申请人： Shamouil Shamouilian , Mehran Moalem , Tony Kaushal
发明人： Shamouil Shamouilian , Mehran Moalem , Tony Kaushal
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/4412 , B01D53/75 , B01D53/8659 , B01D53/8662
摘要： An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.
摘要翻译：可用于消除从处理室35排出的流出物（例如来自CVD室清洁过程）的二氧化碳气体含量的流出物排放系统200包括催化反应器250以减少含量在流出物100中的F 2 H 2。该系统可以进一步包括预浸料230以在催化反应器250中处理之前向流出物100中添加反应性气体和/或处理流出物100。或者，可以通过气体源220向流出物100中加入反应性气体。

49. 发明授权

US06755150B2 Multi-core transformer plasma source 失效
标题翻译：多核变压器等离子体源
公开(公告)号：US06755150B2
公开(公告)日：2004-06-29
申请号：US09839360
申请日：2001-04-20
申请人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
发明人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
IPC分类号： C23C1600
CPC分类号： H01J37/32431
摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.
摘要翻译：使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

50. 发明授权

US06730175B2 Ceramic substrate support 有权
标题翻译：陶瓷基板支撑
公开(公告)号：US06730175B2
公开(公告)日：2004-05-04
申请号：US10055634
申请日：2002-01-22
申请人： Joseph Yudovsky , Salvador P. Umotoy , Shamouil Shamouilian , Ron Rose , Rita Dukes , Xiaoxiong Yuan
发明人： Joseph Yudovsky , Salvador P. Umotoy , Shamouil Shamouilian , Ron Rose , Rita Dukes , Xiaoxiong Yuan
IPC分类号： H01L2100
CPC分类号： C23C16/45521 , C23C16/4581 , C23C16/4586 , H01J2237/2001 , H01L21/67092
摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.
摘要翻译：提供了一种用于在处理期间支撑基板的基板支撑组件。在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。

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