专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20130052587A1 PATTERNING PROCESS AND RESIST COMPOSITION 有权
标题翻译：绘图工艺和耐腐蚀组合物
公开(公告)号：US20130052587A1
公开(公告)日：2013-02-28
申请号：US13586186
申请日：2012-08-15
申请人： Jun Hatakeyama , Kazuhiro Katayama , Tomohiro Kobayashi
发明人： Jun Hatakeyama , Kazuhiro Katayama , Tomohiro Kobayashi
IPC分类号： G03F7/20 , G03F7/027 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/325
摘要： A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.
摘要翻译：通过将包含羟甲基取代的脲，酰胺或氨基甲酸酯化合物的抗蚀剂组合物，包含酸不稳定基取代的羟基的重复单元的聚合物和酸产生剂涂覆在基材上，预烘烤，暴露于高能量辐射，并在有机溶剂显影剂中显影，使得抗蚀剂膜的未曝光区域被溶解并且抗蚀剂膜的曝光区域不溶解。在通过有机溶剂显影的正/负反转的图像形成中，抗蚀剂膜的特征在于未曝光和曝光区域之间的高溶解度对比度。

42. 发明申请

US20120135350A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20120135350A1
公开(公告)日：2012-05-31
申请号：US13303302
申请日：2011-11-23
申请人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
发明人： Tomohiro Kobayashi , Eiji Fukuda , Takayuki Nagasawa , Ryosuke Taniguchi , Youichi Ohsawa , Masayoshi Sagehashi , Yoshio Kawai
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
摘要翻译：一种正型抗蚀剂组合物，其包含（A）包含特定结构的重复单元的聚合物，所述重复单元适于响应于高能量辐射和酸不稳定单元产生酸，所述聚合物具有在酸的作用下增加的碱溶解度，以及（B）特定结构的锍盐在形成精细尺寸图案（通常是沟槽图案和孔图案）中表现出高分辨率。轮廓，DOF和粗糙度的光刻性能得到改善。

43. 发明授权

US08120981B2 Semiconductor integrated circuit device with fuse elements and control method therefore 失效
标题翻译：因此，具有熔丝元件的半导体集成电路器件和控制方法
公开(公告)号：US08120981B2
公开(公告)日：2012-02-21
申请号：US12555031
申请日：2009-09-08
申请人： Tomohiro Kobayashi
发明人： Tomohiro Kobayashi
IPC分类号： G11C17/18
CPC分类号： G11C17/16 , G11C17/165 , G11C17/18
摘要： A semiconductor integrated circuit device includes a first block, a second block, and a control section. The first block includes a first fuse, a first switching configured to write data to the first fuse, a first holding portion capable of holding a first instruction, and a first instruction portion configured to turn on the first switching when a second instruction is given thereto with the first instruction. The second block includes a second fuse, a second switching configured to write data to the second fuse, a second holding portion capable of holding the first instruction, and a second instruction portion configured to turn on the second switching when the second instruction is given thereto with the first instruction. The control section issues the second instruction at a point in time when the first instruction is held in the first and second holding portions.
摘要翻译：半导体集成电路器件包括第一块，第二块和控制部。第一块包括第一熔丝，被配置为向第一熔丝写入数据的第一转换器，能够保持第一指令的第一保持部分和被配置为当给予第二指令时接通第一切换的第一指令部分用第一个指令。第二块包括第二熔丝，第二开关被配置为向第二熔丝写入数据，第二保持部分能够保持第一指令;以及第二指令部分，配置成当给予第二指令时接通第二切换用第一个指令。控制部分在第一指令被保持在第一和第二保持部分的时间点发出第二指令。

44. 发明授权

US07830736B2 Semiconductor integrated circuit device and redundancy method thereof 失效
标题翻译：半导体集成电路器件及其冗余方法
公开(公告)号：US07830736B2
公开(公告)日：2010-11-09
申请号：US12165720
申请日：2008-07-01
申请人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
发明人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
IPC分类号： G11C29/00
CPC分类号： G11C17/18 , G11C17/16 , G11C17/165 , G11C29/027 , G11C29/785 , G11C29/802
摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.
摘要翻译：半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。

45. 发明申请

US20100266957A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20100266957A1
公开(公告)日：2010-10-21
申请号：US12761202
申请日：2010-04-15
申请人： Yuji HARADA , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobayashi
发明人： Yuji HARADA , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobayashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.
摘要翻译：将包含式（1）的重复单元的添加剂聚合物加入到包含基础树脂，光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基，R2是亚烷基或氟代亚烷基，R3是氟烷基。添加剂聚合物对波长高达200nm的辐射是高度透明的。通过选择聚合物结构可以调节聚合物的拒水性，水滑动性，酸性，水解性和其它性能。

46. 发明授权

US07794915B2 Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method 有权
标题翻译：氢化开环易位聚合物，包含其的抗蚀剂组合物和图案化方法
公开(公告)号：US07794915B2
公开(公告)日：2010-09-14
申请号：US11902775
申请日：2007-09-25
申请人： Tadahiro Sunaga , Yuichi Okawa , Takeshi Kinsho , Tomohiro Kobayashi
发明人： Tadahiro Sunaga , Yuichi Okawa , Takeshi Kinsho , Tomohiro Kobayashi
IPC分类号： G03F7/004 , G03F7/30 , C08F232/08
CPC分类号： G03F7/0395 , C08G61/08 , C08G61/12 , C08G2261/142 , C08G2261/1426 , C08G2261/3325 , C08G2261/3342 , C08G2261/418 , C08G2261/72 , G03F7/0397 , Y10S430/106
摘要： Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition.Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79. Also, a resist composition comprising the same and a method for forming a pattern are provided.
摘要翻译：本发明提供一种具有优异的耐蚀刻性和显影性的主链中具有脂环结构的树脂，使用该树脂用高能量辐射曝光的抗蚀剂组合物，以及使用该抗蚀剂组合物形成图案的方法。还提供了一种氢化开环易位聚合物，其由含脂环骨架的结构单元[A]，[B]和选自以下通式[5]和/或[6]的结构单元[C]组成：其中，e和f分别表示0〜3的整数，式中结构单元[A]的通式[1]的X1，通式[3]的X2和通式结构单元[B]的[4]为-O-，其中结构单元[A]，[B]和[C]的摩尔比同时满足[A] /（[B] + [C] ）为20/80〜98/2，（[A] + [B]）/ [C]为99/1〜50/50，（[A] + [C]）/ [B] 99/1至21/79。此外，提供了包含该抗蚀剂组合物的抗蚀剂组合物和形成图案的方法。

47. 发明申请

US20100097866A1 SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：半导体存储器件
公开(公告)号：US20100097866A1
公开(公告)日：2010-04-22
申请号：US12555029
申请日：2009-09-08
申请人： Tomohiro Kobayashi
发明人： Tomohiro Kobayashi
IPC分类号： G11C7/06 , G11C7/02 , G11C7/00
CPC分类号： G11C7/14 , G11C7/065 , G11C17/12
摘要： A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.
摘要翻译：一种半导体存储器件，包括设置有包括多个存储单元的主存储单元阵列的存储单元阵列和包括多个虚拟存储单元的虚拟列，虚设读出电流控制部，被配置为控制虚拟的当前值该虚拟存储单元的读出电流使得当前值在存储单元的第一和第二状态中的读出电流的当前值之间变化，以及设置有读出放大器的感测部分，该读出放大器被配置为接收读出电流第一状态和第二状态之一，或虚拟读出电流作为输入，将这些电流彼此进行比较，并输出电流。

48. 发明申请

US20090246686A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：聚合物，聚合物制备方法，耐蚀组合物和图案方法
公开(公告)号：US20090246686A1
公开(公告)日：2009-10-01
申请号：US12411206
申请日：2009-03-25
申请人： Takeru WATANABE , Takeshi Kinsho , Tomohiro Kobayashi , Tadahiro Sunaga , Yuichi Okawa , Hirofumi Io
发明人： Takeru WATANABE , Takeshi Kinsho , Tomohiro Kobayashi , Tadahiro Sunaga , Yuichi Okawa , Hirofumi Io
IPC分类号： G03F7/004 , C08F283/01 , G03F7/20
CPC分类号： C08F283/01 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/115 , Y10S430/143
摘要： A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base.
摘要翻译：提供了在酸作用下在碱性显影剂中溶解速率增加的聚合物。聚合物通过在碱存在下使氢化ROMP聚合物与O-烷基化剂反应来制备。

49. 发明申请

US20090010085A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND REDUNDANCY METHOD THEREOF 失效
标题翻译：半导体集成电路设备及其冗余方法
公开(公告)号：US20090010085A1
公开(公告)日：2009-01-08
申请号：US12165720
申请日：2008-07-01
申请人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
发明人： Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
IPC分类号： G11C29/00 , G11C17/16
CPC分类号： G11C17/18 , G11C17/16 , G11C17/165 , G11C29/027 , G11C29/785 , G11C29/802
摘要： A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.
摘要翻译：半导体集成电路器件包括第一熔丝电路，第二熔丝电路和控制信号发生电路，其发送第一控制信号并执行程序，使得第一熔丝电路的电阻值变得大于第二熔丝电路的电阻值熔丝电路，并发送第二控制信号并执行重新编程，使得第二熔丝电路的电阻值变得大于第一熔丝电路的电阻值。

50. 发明申请

US20080153030A1 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US20080153030A1
公开(公告)日：2008-06-26
申请号：US12000284
申请日：2007-12-11
申请人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Tomohiro Kobayashi , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0045
摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
摘要翻译：公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光的高能束作为光源显着提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式