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41. 发明申请

US20220197143A1 ADHESION PROMOTING PHOTORESIST UNDERLAYER COMPOSITION 有权
公开(公告)号：US20220197143A1
公开(公告)日：2022-06-23
申请号：US17127434
申请日：2020-12-18
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Joshua Kaitz , Ke Yang , Keren Zhang , Li Cui , James F. Cameron , Dan B. Millward , Shintaro Yamada
IPC分类号： G03F7/11 , C09D171/00 , C08G65/40
摘要： A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m (14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

42. 发明申请

US20220197142A1 PHOTORESIST UNDERLAYER COMPOSITIONS AND PATTERNING METHODS 有权
公开(公告)号：US20220197142A1
公开(公告)日：2022-06-23
申请号：US17124751
申请日：2020-12-17
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Joshua Kaitz , Michael Finch , Paul J. LaBeaume , Shintaro Yamada , Suzanne M. Coley
IPC分类号： G03F7/11 , C08G65/40 , C09D171/12 , C08G73/06 , C09D179/04 , C08F220/18 , C09D133/10 , C23C16/02 , C23C16/20 , C23C16/455 , G03F7/16 , G03F7/42 , H01L21/027
摘要： A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

43. 发明申请

US20210397093A1 SILICON-CONTAINING UNDERLAYERS 有权
公开(公告)号：US20210397093A1
公开(公告)日：2021-12-23
申请号：US17370541
申请日：2021-07-08
申请人： Rohm and Haas Electronic Materials LLC
发明人： Charlotte A. Cutler , Li Cui , Shintaro Yamada , Paul J. LaBeaume , Suzanne M. Coley , James F. Cameron , Daniel Greene
IPC分类号： G03F7/11 , C08F230/08 , G03F7/16 , G03F7/32 , G03F7/20 , G03F7/42 , G03F7/075
摘要： Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

44. 发明申请

US20210247695A1 AROMATIC UNDERLAYER 有权
公开(公告)号：US20210247695A1
公开(公告)日：2021-08-12
申请号：US17245326
申请日：2021-04-30
申请人： Rohm and Haas Electronic Materials LLC
发明人： Sheng Liu , James F. Cameron , Shintaro Yamada , Iou-Sheng Ke , Keren Zhang , Daniel Greene , Paul J. LaBeaume , Li Cui , Suzanne M. Coley
IPC分类号： G03F7/11 , C09D5/00 , G03F7/075
摘要： Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

45. 发明授权

US10886119B2 Aromatic underlayer 有权
公开(公告)号：US10886119B2
公开(公告)日：2021-01-05
申请号：US16502062
申请日：2019-07-03
申请人： Rohm and Haas Electronic Materials LLC
发明人： Sheng Liu , James F. Cameron , Shintaro Yamada
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L23/62 , H01L21/02 , C08L61/30 , C08L65/00 , H01L21/3213
摘要： Curable homopolymers formed from monomers having two 2-naphthol moieties are useful as underlayers in semiconductor manufacturing processes.

46. 发明申请

US20200348592A1 RESIST UNDERLAYER COMPOSITIONS AND METHODS OF FORMING PATTERNS WITH SUCH COMPOSITIONS 审中-公开
公开(公告)号：US20200348592A1
公开(公告)日：2020-11-05
申请号：US16530273
申请日：2019-08-02
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Joshua Kaitz , Ke Yang , Keren Zhang , James F. Cameron , Li Cui , Emad Aqad , Shintaro Yamada , Paul J. LaBeaume
IPC分类号： G03F7/075 , G03F7/09 , C08L25/18
摘要： A resist underlayer composition including a polyarylene ether, an additive polymer that is different from the polyarylene ether, and a solvent, wherein the additive polymer includes an aromatic or heteroaromatic group having at least one protected or free functional group selected from hydroxy, thiol, and amino.

47. 发明申请

US20180164686A1 METHOD USING SILICON-CONTAINING UNDERLAYERS 审中-公开
公开(公告)号：US20180164686A1
公开(公告)日：2018-06-14
申请号：US15834157
申请日：2017-12-07
申请人： Rohm and Haas Electronic Materials LLC
发明人： Li Cui , Paul J. LaBeaume , Charlotte A. Cutler , Suzanne M. Coley , Shintaro Yamada , James F. Cameron , William Williams
IPC分类号： G03F7/11 , C09D151/00 , C09D187/00 , G03F7/16 , G03F7/42 , G03F7/20 , G03F7/26
CPC分类号： G03F7/11 , C08F212/14 , C08F212/32 , C08F2220/283 , C08F2220/303 , C08L101/00 , C09D151/003 , C09D187/00 , C09D187/005 , G03F7/0752 , G03F7/091 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/26 , G03F7/425
摘要： Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

48. 发明申请

US20180059546A1 SILICON-CONTAINING UNDERLAYERS 有权
公开(公告)号：US20180059546A1
公开(公告)日：2018-03-01
申请号：US15254929
申请日：2016-09-01
申请人： Rohm and Haas Electronic Materials LLC
发明人： Li Cui , Charlotte A. Cutler , Suzanne M. Coley , Owendi Ongayi , Christopher P. Sullivan , Paul J. LaBeaume , Shintaro Yamada , Mingqi Li , James F. Cameron
IPC分类号： G03F7/11 , G03F7/16 , G03F7/42 , C08G77/04 , C09D5/20 , C09D183/04 , C08G63/08 , C08F20/14 , C08F20/30 , C08F16/10 , C08F20/06 , C08F24/00 , G03F7/20 , G03F7/30
CPC分类号： G03F7/11 , C08F16/10 , C08F20/06 , C08F20/10 , C08F20/14 , C08F20/30 , C08F24/00 , C08F220/14 , C08F220/20 , C08F220/34 , C08F222/06 , C08F222/40 , C08F230/08 , C08F2220/1825 , C08F2220/1858 , C08F2220/1891 , C08F2220/282 , C08F2220/283 , C08F2220/325 , C08F2800/10 , C08G63/08 , C08G77/04 , C09D5/20 , C09D183/04 , G03F7/161 , G03F7/20 , G03F7/30 , G03F7/422
摘要： Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

49. 发明授权

US08900794B2 Photoacid generator and photoresist comprising same 有权
标题翻译：光生酸产生剂和包含其的光致抗蚀剂
公开(公告)号：US08900794B2
公开(公告)日：2014-12-02
申请号：US13630456
申请日：2012-09-28
申请人： Rohm and Haas Electronic Materials LLC
发明人： Emad Aqad , Cheng-Bai Xu , Mingqi Li , Shintaro Yamada , William Williams, III
IPC分类号： G03F7/038 , G03F7/039 , G03F7/029 , G03F7/09 , C07C309/65
CPC分类号： G03F7/30 , C07C309/65 , C07C311/09 , C07C2603/74 , C07D313/08 , C07D313/10 , C07D327/04 , C07D493/18 , C07D497/18 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0397 , G03F7/2041
摘要： A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3−Z+ (I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10,k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater. A precursor compound to the photoacid generator, a photoresist composition including the photoacid generator, and a substrate coated with the photoresist composition, are also disclosed.
摘要翻译：光生酸化合物具有式（I）：其中A是取代基的[A-（CHR1）p] k-（L） - （CH2）m-（C（R2）2）n-SO3-Z +（I）或任选包含O，S，N，F或包含前述至少之一的组合的未取代的单环，多环或稠合多环C 5或更多脂环族基团，R 1是H，单键或取代或未取代的C1 -30烷基，其中当R 1为单键时，R 1与A的碳原子共价连接，每个R 2独立地为H，F或C 1-4氟烷基，其中至少一个R 2不为氢，L为包含磺酸酯基，磺酰胺基或C1-30磺酸酯或磺酰胺的基团的连接基团，Z是有机或无机阳离子，p是0至10的整数，k是1或2，m是整数为0以上，n为1以上的整数。还公开了光致酸产生剂的前体化合物，包含光致酸产生剂的光致抗蚀剂组合物和涂有光致抗蚀剂组合物的基材。

50. 发明授权

US12099300B2 Aromatic underlayer 有权
公开(公告)号：US12099300B2
公开(公告)日：2024-09-24
申请号：US16598264
申请日：2019-10-10
申请人： Rohm and Haas Electronic Materials LLC
发明人： Sheng Liu , James F. Cameron , Shintaro Yamada , Iou-Sheng Ke , Keren Zhang , Daniel Greene , Paul J. LaBeaume , Li Cui , Suzanne M. Coley
IPC分类号： G03F7/11 , G03F7/075 , G03F7/09 , G03F7/20
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/091 , G03F7/2016
摘要： Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

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