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41. 发明授权

US5582860A Method for producing thin film magnetic structure 失效
标题翻译：薄膜磁性结构的制造方法
公开(公告)号：US5582860A
公开(公告)日：1996-12-10
申请号：US469576
申请日：1995-06-06
申请人： Robert E. Fontana, Jr. , Frances A. Houle , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Frances A. Houle , Ching H. Tsang
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/22 , H01F41/30 , H01F41/34 , H01L43/12 , B05D5/12 , B05D3/00
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/324 , H01F41/22 , H01F41/302 , H01F41/34
摘要： A method for producing a magnetic structure, such as a thin film magnetic head, in which the magnetic and electrical characteristics of magnetic material are tailored to produce magnetic and electrical characteristics in selected localized areas of the magnetic material. In a specific embodiment, the structure comprises a layer of magnetic material having an overlayer and an underlayer, and the magnetic characteristics of the material are modified by rapid thermal annealing.
摘要翻译：一种用于制造诸如薄膜磁头的磁性结构的方法，其中磁性材料的磁特性和电特性被定制以在磁性材料的选定局部区域中产生磁性和电特性。在具体实施例中，该结构包括具有覆盖层和底层的磁性材料层，并且通过快速热退火来改变材料的磁特性。

42. 发明授权

US5503870A Method for producing thin film magnetic structure 失效
公开(公告)号：US5503870A
公开(公告)日：1996-04-02
申请号：US361018
申请日：1994-12-21
申请人： Robert E. Fontana, Jr. , Frances A. Houle , Ching H. Tsang
发明人： Robert E. Fontana, Jr. , Frances A. Houle , Ching H. Tsang
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/22 , H01F41/30 , H01F41/34 , H01L43/12 , B05D3/06 , B05D5/12
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , H01F10/324 , H01F41/22 , H01F41/302 , H01F41/34
摘要： A method for producing a magnetic structure, such as a thin film magnetic head, in which the magnetic and electrical characteristics of magnetic material are tailored to produce magnetic and electrical characteristics in selected localized areas of the magnetic material. In a specific embodiment, the structure comprises a layer of magnetic material having an overlayer and an underlayer, and the magnetic characteristics of the material are modified by rapid thermal annealing.

43. 发明授权

US4940511A Method for making a magnetoresistive read transducer 失效
标题翻译：制造磁阻读取传感器的方法
公开(公告)号：US4940511A
公开(公告)日：1990-07-10
申请号：US355239
申请日：1989-05-22
申请人： Robert E. Fontana, Jr. , James K. Howard , James H. Lee , Haralambos Lefakis
发明人： Robert E. Fontana, Jr. , James K. Howard , James H. Lee , Haralambos Lefakis
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.
摘要翻译：磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。在具体实施例中，间隔层仅在MR层的中心区域上延伸。在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。

44. 发明授权

US08107197B2 Slider with integrated writer and semiconductor heterostucture read sensor 有权
标题翻译：具有集成写入器和半导体异构结构读取传感器的滑块
公开(公告)号：US08107197B2
公开(公告)日：2012-01-31
申请号：US12345812
申请日：2008-12-30
申请人： Robert E. Fontana, Jr. , Bruce Alvin Gurney , Ernesto E. Marinero
发明人： Robert E. Fontana, Jr. , Bruce Alvin Gurney , Ernesto E. Marinero
IPC分类号： G11B15/64
CPC分类号： G11B5/6005 , G11B5/3993
摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.
摘要翻译：一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。

45. 发明授权

US08045298B2 Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权
标题翻译：具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法
公开(公告)号：US08045298B2
公开(公告)日：2011-10-25
申请号：US12004235
申请日：2007-12-20
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jui-Lung Li , Sergio Nicoletti
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Jui-Lung Li , Sergio Nicoletti
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/33 , G11B5/39
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译：公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。中心开口具有用于定义TTM的轨道宽度（TW）的宽度。接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。提供了各种实施例和技术。

46. 发明授权

US07652954B2 Thermally assisted recording head with magnetic pole integrated into optical aperture for dual gradient recording 有权
标题翻译：热辅助记录头，磁极集成在光学孔径中，用于双梯度记录
公开(公告)号：US07652954B2
公开(公告)日：2010-01-26
申请号：US12154517
申请日：2008-05-22
申请人： Robert E. Fontana, Jr. , James Terrence Olson , Barry Cushing Stipe , Timothy Carl Strand
发明人： Robert E. Fontana, Jr. , James Terrence Olson , Barry Cushing Stipe , Timothy Carl Strand
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/1278 , G11B2005/0021
摘要： A write head structure for perpendicular recording having a pole tip integrated into the metal film surrounding a C aperture near field light source is disclosed. The close proximity of the pole tip to the light source enables more precise location of data cells written into the magnetic media, through the use of dual gradient thermally assisted recording. In dual gradient recording, data is fixed by the effect of both a thermal gradient, which affects the coercivity of the magnetic media, combined with a magnetic field gradient imposed by the pole tip.
摘要翻译：公开了一种用于垂直记录的写入头结构，其具有集成在围绕C光阑近场光源的金属膜中的极尖。通过使用双梯度热辅助记录，磁极尖端与光源的紧密接近使得能够更精确地写入磁介质中的数据单元。在双梯度记录中，数据通过影响磁性介质的矫顽力的热梯度和磁极尖所施加的磁场梯度的结合来影响。

47. 发明授权

US07295406B2 Narrow track extraordinary magneto resistive [EMR] device 有权
标题翻译：窄轨非磁性电磁[EMR]装置
公开(公告)号：US07295406B2
公开(公告)日：2007-11-13
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译：具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。传感器包括一层半导体层和一层导电材料。第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

48. 发明授权

US07203036B2 Planar extraordinary magnetoresistance sensor 有权
标题翻译：平面非凡磁阻传感器
公开(公告)号：US07203036B2
公开(公告)日：2007-04-10
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39 , G01R33/02 , G01R27/08
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译：非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

49. 发明授权

US07148072B2 Method and apparatus for oxidizing conductive redeposition in TMR sensors 有权
标题翻译：在TMR传感器中氧化导电再沉积的方法和装置
公开(公告)号：US07148072B2
公开(公告)日：2006-12-12
申请号：US10857364
申请日：2004-05-28
申请人： Robert E. Fontana, Jr. , Howard G. Zolla
发明人： Robert E. Fontana, Jr. , Howard G. Zolla
IPC分类号： H01L21/00
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译：公开了用于氧化TMR传感器中的导电再沉积的方法和装置。蚀刻TMR阻挡层。再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。

50. 发明授权

US06972935B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
公开(公告)号：US06972935B2
公开(公告)日：2005-12-06
申请号：US10917982
申请日：2004-08-13
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G01R33/09 , G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.

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