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41. 发明申请

US20110241019A1 III-Nitride Power Semiconductor Device 有权
标题翻译： III型氮化物功率半导体器件
公开(公告)号：US20110241019A1
公开(公告)日：2011-10-06
申请号：US13160211
申请日：2011-06-14
申请人： Robert Beach , Zhi He , Jianjun Cao
发明人： Robert Beach , Zhi He , Jianjun Cao
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/02458 , H01L21/0254 , H01L21/28581 , H01L29/205 , H01L29/401 , H01L29/4916 , H01L29/495 , H01L29/4966 , H01L29/772 , H01L29/7786 , H01L29/7787
摘要： A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
摘要翻译：一种III族氮化物半导体器件，其包括在栅极电极和栅极电介质之间的势垒体。

42. 发明申请

US20100258841A1 BACK DIFFUSION SUPPRESSION STRUCTURES 有权
标题翻译：反扩散抑制结构
公开(公告)号：US20100258841A1
公开(公告)日：2010-10-14
申请号：US12756088
申请日：2010-04-07
申请人： Alexander Lidow , Robert Beach , Guang Y. Zhao , Jianjun Cao
发明人： Alexander Lidow , Robert Beach , Guang Y. Zhao , Jianjun Cao
IPC分类号： H01L29/772 , H01L21/20 , H01L21/306
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/475 , H01L29/66462
摘要： An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
摘要翻译：增强型GaN晶体管，具有衬底的晶体管，过渡层，由III氮化物材料构成的缓冲层，由III氮化物材料构成的阻挡层，漏极和源极接触，含栅极的受主型掺杂元素，以及在栅极和缓冲层之间由III型氮化物材料构成的扩散阻挡层。

43. 发明授权

US07759699B2 III-nitride enhancement mode devices 有权
标题翻译： III族氮化物增强型器件
公开(公告)号：US07759699B2
公开(公告)日：2010-07-20
申请号：US11481771
申请日：2006-07-06
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/80
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462 , H01L29/7781 , H01L29/7783 , H01L29/7785
摘要： A III-nitride power semiconductor device that includes a nitrogen polar active heterojunction having a two-dimensional electron gas and including a first III-nitride semiconductor body by one band gap and a second III-nitride body having another band gap over the first III-nitride semiconductor body, a gate arrangement, a gate barrier under the gate arrangement thereof, a first power electrode and a second power electrode, and a method for fabricating the device.
摘要翻译：一种III族氮化物功率半导体装置，其包括具有二维电子气体的氮极性活性异质结，并且具有通过一个带隙的第一III族氮化物半导体本体和在所述第一III- 氮化物半导体本体，栅极布置，栅极布置之下的栅极栅极，第一电源电极和第二电力电极，以及制造该器件的方法。

44. 发明授权

US07725326B1 Method and system for presenting item information using a portable data terminal 有权
标题翻译：使用便携式数据终端呈现物品信息的方法和系统
公开(公告)号：US07725326B1
公开(公告)日：2010-05-25
申请号：US11460579
申请日：2006-07-27
申请人： William X. Tracy , Thomas K. Roslak , Judith Murrah , Francis Riso , Robert Beach , Robert Sandler
发明人： William X. Tracy , Thomas K. Roslak , Judith Murrah , Francis Riso , Robert Beach , Robert Sandler
IPC分类号： G06Q99/00
CPC分类号： G06Q30/0603 , G06Q20/20 , G06Q20/204 , G06Q30/0635
摘要： An improved portable shopping system with improved data presentation system for presenting customer desired data on a portable terminal. The portable terminal includes audio as well as video presentation components that are used to provide customer specific marketing files to promote the sale of identified items.
摘要翻译：一种改进的便携式购物系统，具有改进的数据呈现系统，用于在便携式终端上呈现客户期望的数据。便携式终端包括音频以及用于提供客户特定营销文件以促进所识别的物品的销售的视频呈现组件。

45. 发明授权

US07649215B2 III-nitride device passivation and method 有权
标题翻译： III族氮化物器件钝化和方法
公开(公告)号：US07649215B2
公开(公告)日：2010-01-19
申请号：US11004212
申请日：2004-12-03
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L21/28581 , H01L21/28587 , H01L23/3171 , H01L29/2003 , H01L29/402 , H01L29/452 , H01L29/66143 , H01L29/66462 , H01L29/861 , H01L29/872 , H01L29/88 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An embodiment of a III-nitride semiconductor device and method for making the same may include a low resistive passivation layer that permits the formation of device contacts without damage to the III-nitride material during high temperature processing. The passivation layer may be used to passivate the entire device. The passivation layer may also be provided in between contacts and active layers of the device to provide a low resistive path for current conduction. The passivation process may be used with any type of device, including FETs, rectifiers, schottky diodes and so forth, to improve breakdown voltage and prevent field crowding effects near contact junctions. The passivation layer may be activated with a low temperature anneal that does not impact the III-nitride device regarding outdiffusion.
摘要翻译： III族氮化物半导体器件的一个实施例及其制造方法可以包括低电阻钝化层，其允许在高温处理期间形成器件触点而不损坏III族氮化物材料。钝化层可用于钝化整个器件。钝化层也可以设置在器件的触点和有源层之间，以提供用于电流传导的低电阻路径。钝化工艺可以用于任何类型的器件，包括FET，整流器，肖特基二极管等，以改善击穿电压并防止接触点附近的场拥挤效应。钝化层可以通过不影响III族氮化物器件的低扩散退火而被激活。

46. 发明申请

US20100006895A1 III-NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III-NITRIDE半导体器件
公开(公告)号：US20100006895A1
公开(公告)日：2010-01-14
申请号：US12351967
申请日：2009-01-12
申请人： Jianjun Cao , Robert Beach , Sadiki Jordan
发明人： Jianjun Cao , Robert Beach , Sadiki Jordan
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/2003
摘要： A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and a gate electrode that does not overlap the top surface of the field dielectric bodies and is disposed over a well in the III-nitride heterojunction.
摘要翻译： III族氮化物电源开关，其包括III族氮化物异质结，设置在异质结上的场电介质体，以及栅电极，其不与场介电体的顶表面重叠并且设置在III族氮化物异质结中的阱上。

47. 发明授权

US07491627B2 III-nitride device and method with variable epitaxial growth direction 有权
标题翻译： III族氮化物器件和具有可变外延生长方向的方法
公开(公告)号：US07491627B2
公开(公告)日：2009-02-17
申请号：US11894850
申请日：2007-08-22
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： H01L29/66325 , H01L29/2003
摘要： A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.
摘要翻译：由III族氮化物材料制成的半导体器件由外延生长制成，允许垂直和侧向生长几何形状来改善器件特性。由于没有使用离子注入工艺，所以由于半导体材料结构的更高的完整性，所得到的器件具有更大的击穿电压。外延生长的层还表现出更大的导热性，以改善功率半导体器件的工作。该装置可以包括横向生长的电荷补偿区域以形成超连接装置。所得到的器件可以是双向的，并且除了给定额定电压的较高电流容量之外还具有改进的击穿电压。

48. 发明授权

US07386298B2 Method and apparatus for roaming on a wireless network 有权
标题翻译：用于在无线网络上漫游的方法和装置
公开(公告)号：US07386298B2
公开(公告)日：2008-06-10
申请号：US10883294
申请日：2004-07-01
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H04M1/66 , H04M1/68 , H04M3/16
CPC分类号： H04W84/12 , H04L12/4625 , H04L29/04 , H04L69/08 , H04L69/18 , H04W12/02 , H04W12/06 , H04W60/00 , H04W74/00 , H04W84/18
摘要： The present invention provides a method for interfacing a mobile device with a system including a plurality of RF ports and a cell controller adapted to communicate a data signal with the mobile unit through the RF ports. The method includes associating the mobile device with a first RF port using at least one security parameter for communicating the data signal, receiving a request message from the mobile device to roam from the first RF port to a second RF port, and associating the mobile device with the second RF port without changing the at least one security parameter.
摘要翻译：本发明提供了一种用于将移动设备与包括多个RF端口的系统进行接口的方法，以及适于通过RF端口与移动单元通信数据信号的小区控制器。该方法包括使用至少一个用于传送数据信号的安全参数将移动设备与第一RF端口相关联，从移动设备接收请求消息以从第一RF端口漫游到第二RF端口，以及将移动设备具有第二RF端口而不改变至少一个安全参数。

49. 发明申请

US20070298556A1 Field effect transistor with enhanced insulator structure 有权
标题翻译：具有增强的绝缘体结构的场效应晶体管
公开(公告)号：US20070298556A1
公开(公告)日：2007-12-27
申请号：US11895096
申请日：2007-08-23
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.
摘要翻译：基于III族氮化物的场效应晶体管通过处理材料层的界面的面内晶格常数之间的关系来获得改进的性能特性。在III族氮化物材料的界面处产生的高迁移率二维电子气体允许具有低导通电阻的高电流传导，并且可以通过操纵根据III族氮化物材料的特性获得的自发极化场来控制。所产生的场效应晶体管可以在名义上成为形成界面的材料的面内晶格常数匹配的器件上。可以制造名义上关闭的装置，其中材料层之一的面内晶格常数大于其它层材料的面内晶格常数。层材料优选是特别适合于本发明特征的InAlGaN / GaN层。

50. 发明申请

US20070230386A1 Power Saving Function for Wireless Lans: Methods, System and Program Products 有权
标题翻译：无线蓝牙的节能功能：方法，系统和程序产品
公开(公告)号：US20070230386A1
公开(公告)日：2007-10-04
申请号：US11538324
申请日：2006-10-03
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H04L12/56
CPC分类号： H04L47/24 , H04W52/0216 , Y02D70/142 , Y02D70/23
摘要： A wireless data communication system has a first station or mobile unit is linked to a second station configured as an access unit to support packet communication, voice or data, where the voice packets are transmitted in the Continuously Aware Mode (CAM) mode while other packets are buffered by the access point and held until asked for by the first station when in a Power Saving-Poll (PSP) mode. A monitoring apparatus at the access point monitors all transmitted packets and sorts the packets to the mobile unit according to CAM or PSP mode. Voice packets are sent out immediately to the mobile unit. Other packets are stored at the access point. The packet arrival rate may vary during transmission and due to random packet delays introduced by propagation characteristic and processing apparatus. The packet arrival rate and delays are taken into account by the first station in an algorithm to determine and extend the normal safe period in which the station receiver may be powered off.
摘要翻译：无线数据通信系统具有第一站或移动单元被链接到配置为接入单元的第二站，以支持分组通信，语音或数据，其中语音分组以连续感知模式（CAM）模式发送，而其他分组由PSP（Power Saving-Poll）模式被接入点缓冲并保持到第一站所要求的时间。接入点处的监视装置监视所有发送的分组，并根据CAM或PSP模式将分组分类到移动单元。语音数据包立即发送到移动单元。其他数据包存储在接入点。分组到达速率可以在传输期间和由于传播特性和处理设备引入的随机分组延迟而变化。分组到达速率和延迟由第一站在算法中考虑以确定和扩展站接收机可以断电的正常安全期。

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