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41. 发明授权

US07858967B2 Doped semiconductor material and process for production thereof 有权
标题翻译：掺杂半导体材料及其制造方法
公开(公告)号：US07858967B2
公开(公告)日：2010-12-28
申请号：US10489131
申请日：2003-02-20
申请人： Martin Pfeiffer , Leo Karl , Ansgar Werner , Torsten Fritz
发明人： Martin Pfeiffer , Leo Karl , Ansgar Werner , Torsten Fritz
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/002 , C09B11/02 , C09B11/04 , C09B11/12 , C09B11/28 , C09B15/00 , C09B17/00 , C09B19/00 , C09B21/00 , H01L51/0035 , H01L51/0038 , H01L51/005 , H01L51/0059 , H01L51/0094 , H01L51/0508 , H01L51/42 , H01L51/50 , H01L51/5052 , Y02E10/549 , Y02P70/521
摘要： The invention relates to a doped organic semiconductor material with increased charge carrier density and more effective charge carrier mobility, which may be obtained by doping an organic semiconductor material with a chemical compound comprising one or several organic molecular groups (A) and at least one further compound partner (B). The desired doping effect is achieved after cleavage of at least one organic molecular group (A) from the chemical compound by means of at least one organic molecular group (A) or by means of the product of a reaction of at least one molecular group (A) with another atom or molecule.
摘要翻译：本发明涉及具有增加的电荷载流子密度和更有效的电荷载流子迁移率的掺杂有机半导体材料，其可以通过用包含一个或几个有机分子基团（A）的化学化合物和至少一个其它的掺杂有机半导体材料复合伙伴（B）。通过至少一个有机分子基团（A）或通过至少一个分子基团（A）的反应产物从化学化合物中切割出至少一个有机分子基团（A）后，实现所需的掺杂效应 A）与另一个原子或分子。

42. 发明申请

US20100289007A1 ORGANIC OPTOELECTRONIC COMPONENT 有权
标题翻译：有机光电组件
公开(公告)号：US20100289007A1
公开(公告)日：2010-11-18
申请号：US12160344
申请日：2007-01-11
申请人： Ansgar Werner , Gregor Schwartz , Kentaro Harada , Karsten Walzer , Martin Pfeiffer , Karl Leo
发明人： Ansgar Werner , Gregor Schwartz , Kentaro Harada , Karsten Walzer , Martin Pfeiffer , Karl Leo
IPC分类号： H01L51/52 , H01L51/42
CPC分类号： B82Y10/00 , H01L51/002 , H01L51/0046 , H01L51/0059 , H01L51/0072 , H01L51/0081 , H01L51/0085 , H01L51/0086 , H01L51/5052 , H01L51/5212 , H01L51/5228
摘要： The invention relates to an organic optoelectronic component comprising a base electrode, a top electrode that is provided with passages and an arrangement of organic layers, which is formed between the base electrode and the top electrode and makes electrical contact with said electrodes. In said component, light can be generated in a light-emitting region by the application of electrical energy to the base electrode and the top electrode. An organic current distribution layer also extends into the region containing the passages, said layer making electrical contact with the top electrode and the light-emitting region.
摘要翻译：本发明涉及一种有机光电子部件，其包括基极，设置有通孔的顶电极和有机层的布置，其形成在基极和顶电极之间并与所述电极电接触。在所述组件中，通过向基极和顶电极施加电能，可以在发光区域中产生光。有机电流分布层也延伸到包含通道的区域中，所述层与顶部电极和发光区域电接触。

43. 发明申请

US20090045728A1 ELECTRONIC DEVICE WITH A LAYER STRUCTURE OF ORGANIC LAYERS 有权
标题翻译：具有层状结构的电子器件
公开(公告)号：US20090045728A1
公开(公告)日：2009-02-19
申请号：US12158479
申请日：2006-12-22
申请人： Sven Murano , Jan Birnstock , Ansgar Werner , Markus Burghart
发明人： Sven Murano , Jan Birnstock , Ansgar Werner , Markus Burghart
IPC分类号： H01J63/04 , H01L51/00
CPC分类号： H01L51/5052 , H01L51/002 , H01L51/0052 , H01L51/006 , H01L51/0071 , H01L51/0077 , H01L51/0085 , H01L51/5036 , H01L51/5278
摘要： The invention relates to an electronic device comprising a layer structure of organic layers, wherein said layer structure comprises a p-n-junction between an n-type doped organic layer provided as an organic matrix material doped with an n-type dopant and a p-type doped organic layer provided as a further organic matrix material doped with a p-type dopant, and wherein the n-type dopant and the p-type dopant both are molecular dopants, a reduction potential of the p-type dopant is equal or larger than about 0 V vs. Fc/Fc+, and an oxidation potential of the n-type dopant is equal or smaller than about −1.5 V vs. Fc/Fc+.
摘要翻译：本发明涉及一种包括有机层的层结构的电子器件，其中所述层结构包括在作为掺杂有n型掺杂剂的有机基质材料提供的n型掺杂有机层和p型结构之间的pn结掺杂有机层作为掺杂有p型掺杂剂的另外的有机基质材料，其中n型掺杂剂和p型掺杂剂都是分子掺杂剂，p型掺杂剂的还原电位等于或大于约0V对Fc / Fc +，并且n型掺杂剂的氧化电位等于或小于约-1.5V对Fc / Fc +。

44. 发明申请

US20070249148A1 METHOD FOR PRODUCING A LAYER CONSISTING OF A DOPED SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：用于生产掺杂半导体材料的层的方法
公开(公告)号：US20070249148A1
公开(公告)日：2007-10-25
申请号：US11576553
申请日：2005-10-04
申请人： Ansgar Werner , Jan Birnstock , Sven Murano
发明人： Ansgar Werner , Jan Birnstock , Sven Murano
IPC分类号： H01L21/20
CPC分类号： H01L51/5052 , H01L51/0008 , H01L51/002 , H01L51/5012
摘要： The invention concerns a method for depositing a layer consisting of a doped semiconductor material on a substrate, as well as a device for implementing said method. According to said method, the doped semiconductor material contains at least one semiconductor matrix material and at least one doping material. Said method consists in vaporizing a mixture of the semiconductor material(s) and of the doping material(s) using a vaporizing source, then in depositing said mixture on the substrate.
摘要翻译：本发明涉及一种用于在衬底上沉积由掺杂半导体材料组成的层的方法，以及用于实现所述方法的装置。根据所述方法，所述掺杂半导体材料含有至少一种半导体基质材料和至少一种掺杂材料。所述方法包括使用蒸发源蒸发半导体材料和掺杂材料的混合物，然后将所述混合物沉积在衬底上。

45. 发明授权

US09112175B2 Organic component 有权
标题翻译：有机成分
公开(公告)号：US09112175B2
公开(公告)日：2015-08-18
申请号：US12158482
申请日：2006-12-21
申请人： Sven Murano , Jan Birnstock , Ansgar Werner , Martin Vehse , Michael Hofmann
发明人： Sven Murano , Jan Birnstock , Ansgar Werner , Martin Vehse , Michael Hofmann
IPC分类号： H01J63/04 , H01L51/50
CPC分类号： H01L51/5052 , H01L51/5088 , H01L51/5092
摘要： The invention relates to an organic component, in particular a light-emitting organic component, having an electrode (1; 2) and a counter electrode (2; 1) and also an arrangement of organic layers (3) which is arranged between the electrode (1; 2) and the counterelectrode (2; 1) and which is in electrical contact with the electrode (1; 2) and the counterelectrode (2; 1), the arrangement of organic layers (3) comprising charge carrier transport layers (4, 8) for transporting charge carriers injected from the electrode (1; 2) and from the counterelectrode (2; 1) into the arrangement of organic layers (3), and with an injection layer (5; 9) made from a molecular doping material being formed in the arrangement of organic layers (3) between the electrode (1; 2) and a charge carrier transport layer (4; 8) arranged opposite to the electrode (1; 2), which injection layer is in contact with the charge carrier transport layer (4; 8) arranged opposite to the electrode (1; 2), the molecular doping material having a molecular weight of at least 300 g/mol.
摘要翻译：本发明涉及具有电极（1; 2）和对电极（2; 1）的有机组分，特别是发光有机组分，还涉及一种有机层（3）的布置在电极（1; 2）和反电极（2; 1），并与电极（1; 2）和反电极（2; 1）电接触，包括电荷载流子传输层用于将从电极（1; 2）注入的电荷载流子和从反电极（2; 1）注入到有机层（3）的排列中的电荷载体和用分子的注入层（5; 9）在电极（1; 2）和与电极（1; 2）相对布置的电荷载流子传输层（4; 8）之间的有机层（3）的排列中形成掺杂材料，该注入层与与电极（1; 2）相对布置的电荷载流子传输层（4; 8），分子掺杂材料的分子量至少为300g / mol。

46. 发明授权

US08324613B2 Method for producing an electronic device with a layer structure and an electronic device 有权
标题翻译：一种具有层结构和电子器件的电子器件的制造方法
公开(公告)号：US08324613B2
公开(公告)日：2012-12-04
申请号：US12092167
申请日：2006-10-23
申请人： Ansgar Werner , Jan Blochwitz-Nimoth , Tobias Canzler
发明人： Ansgar Werner , Jan Blochwitz-Nimoth , Tobias Canzler
IPC分类号： H01L35/24
CPC分类号： H01L51/5052 , H01L51/001
摘要： The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.
摘要翻译：本发明涉及一种在电子器件中特别是在有机发光器件中制造层结构的方法，所述方法包括以下步骤：将所述层结构制成复合层结构，所述层结构具有通过第一材料和第二材料，其中所述复合层结构分别作为由所述第一材料和所述第二材料制成的至少三个非混合子层的叠层提供，其中在所述至少三个非混合的堆叠内每个第一材料子层的子层之后是相邻的第二材料子层，并且每个第二材料子层之后是相邻的第一材料子层，并且其中选择第一材料和第二材料形成用于电掺杂的主体 - 掺杂剂材料系统。本发明还涉及一种电子设备。

47. 发明申请

US20120223296A1 Organic Semiconducting Materials and Organic Component 有权
标题翻译：有机半导体材料与有机成分
公开(公告)号：US20120223296A1
公开(公告)日：2012-09-06
申请号：US13402142
申请日：2012-02-22
申请人： Ansgar Werner , Sascha Dorok , Carsten Rothe , Andreas Haldi , Michael Felicetti , Volker Lischewski , Mirko Tschunarjew
发明人： Ansgar Werner , Sascha Dorok , Carsten Rothe , Andreas Haldi , Michael Felicetti , Volker Lischewski , Mirko Tschunarjew
IPC分类号： H01L51/54 , H01L51/00 , H01L51/46
CPC分类号： H01L51/006 , C07C211/58 , H01L51/4253 , H01L51/506 , H01L51/5088 , Y02E10/549
摘要： An organic semiconductive material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from an organic compound and wherein the matrix material is selected from an diamine compound, also an organic component and a mixture for producing a doped semiconductor layer.
摘要翻译：一种有机半导体材料，其包含至少一种基质材料和至少一种掺杂材料，其中所述掺杂材料选自有机化合物，并且其中所述基质材料选自二胺化合物，还可以选自有机组分和用于产生掺杂半导体层。

48. 发明授权

US08227029B2 Method for depositing a vapour deposition material 有权
标题翻译：蒸镀材料的沉积方法
公开(公告)号：US08227029B2
公开(公告)日：2012-07-24
申请号：US12134469
申请日：2008-06-06
申请人： Jan Birnstock , Ansgar Werner , Micheal Hofmann
发明人： Jan Birnstock , Ansgar Werner , Micheal Hofmann
IPC分类号： C23C16/00
CPC分类号： C23C14/24 , C23C14/12 , C23C14/564
摘要： Method for depositing a vapour deposition material on a base material, in particular for doping a semiconductor material, in which a vapour deposition batch, in which the vapour deposition material is enclosed in an air-tight manner by a shell, is introduced into a vapour deposition chamber and the shell is opened in the vapour deposition chamber, so that the vapour deposition material in the vapour deposition chamber then evaporates and is deposited on the base material, wherein the shell is opened by at least partially melting by heating a meltable shell material which at least partially forms the shell at a melting temperature which is lower than an evaporation temperature of the vapour deposition material.
摘要翻译：将气相沉积材料沉积在基材上，特别是用于掺杂半导体材料的方法，其中气相沉积材料以气密方式被外壳包封在其中的气相沉积批料被引入蒸气沉积室和壳体在气相沉积室中打开，使得气相沉积室中的气相沉积材料然后蒸发并沉积在基材上，其中通过加热可熔壳体材料至少部分地熔化壳体，其至少部分地在低于蒸镀材料的蒸发温度的熔融温度下形成壳。

49. 发明授权

US08071976B2 Organic field-effect transistor and circuit 有权
标题翻译：有机场效应晶体管和电路
公开(公告)号：US08071976B2
公开(公告)日：2011-12-06
申请号：US12534402
申请日：2009-08-03
申请人： Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
发明人： Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
IPC分类号： H01L51/00
CPC分类号： H01L51/0562 , H01L27/283 , H01L51/002
摘要： The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
摘要翻译：本发明涉及有机场效应晶体管，特别涉及一种有机薄膜场效应晶体管，其包括栅电极，漏电极和源电极，与栅电极接触形成的电介质层，有源层由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层，其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界表面区域，其中在有源层和掺杂剂材料层之间形成平面接触，其中掺杂剂材料层中类似的电荷载流子，即电子或空穴的迁移率不大于活性层的一半。

50. 发明授权

US07830089B2 Electronic device with a layer structure of organic layers 有权
标题翻译：具有有机层层结构的电子器件
公开(公告)号：US07830089B2
公开(公告)日：2010-11-09
申请号：US12158479
申请日：2006-12-22
申请人： Sven Murano , Jan Birnstock , Ansgar Werner , Markus Burghart
发明人： Sven Murano , Jan Birnstock , Ansgar Werner , Markus Burghart
IPC分类号： H01J1/62
CPC分类号： H01L51/5052 , H01L51/002 , H01L51/0052 , H01L51/006 , H01L51/0071 , H01L51/0077 , H01L51/0085 , H01L51/5036 , H01L51/5278
摘要： The invention relates to an electronic device comprising a layer structure of organic layers, wherein said layer structure comprises a p-n-junction between an n-type doped organic layer provided as an organic matrix material doped with an n-type dopant and a p-type doped organic layer provided as a further organic matrix material doped with a p-type dopant, and wherein the n-type dopant and the p-type dopant both are molecular dopants, a reduction potential of the p-type dopant is equal or larger than about 0 V vs. Fc/Fc+, and an oxidation potential of the n-type dopant is equal or smaller than about −1.5 V vs. Fc/Fc+.
摘要翻译：本发明涉及一种包括有机层的层结构的电子器件，其中所述层结构包括在作为掺杂有n型掺杂剂的有机基质材料提供的n型掺杂有机层和p型结构之间的pn结掺杂有机层作为掺杂有p型掺杂剂的另外的有机基质材料，其中n型掺杂剂和p型掺杂剂都是分子掺杂剂，p型掺杂剂的还原电位等于或大于约0V对Fc / Fc +，并且n型掺杂剂的氧化电位等于或小于约-1.5V对Fc / Fc +。

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