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41. 发明授权

US07250930B2 Transparent active-matrix display 有权
标题翻译：透明有源矩阵显示
公开(公告)号：US07250930B2
公开(公告)日：2007-07-31
申请号：US10361045
申请日：2003-02-07
申请人： Randy Hoffman , Michael J. Regan , Susan Nakashima , Marshall Field
发明人： Randy Hoffman , Michael J. Regan , Susan Nakashima , Marshall Field
IPC分类号： G09G3/36
CPC分类号： H01L27/1225 , G02F1/1334 , G02F2001/1635 , H01L27/1214 , H01L27/3244 , H01L29/4908 , H01L29/7869 , H01L2251/5323
摘要： A transparent active-matrix display based on a substrate has a multiplicity of transparent active pixel elements arranged in an array and transparent electrical connections to each pixel, whereby each of the pixel elements is adapted to be set independently to two or more states. In some embodiments, the substrate may also be transparent.
摘要翻译：基于衬底的透明有源矩阵显示器具有排列成阵列的多个透明有源像素元件和与每个像素的透明电连接，由此每个像素元件适于独立设置为两个或多个状态。在一些实施例中，衬底也可以是透明的。

42. 发明申请

US20070075365A1 Thin-film transistor and method of making the same 审中-公开
标题翻译：薄膜晶体管及其制作方法
公开(公告)号：US20070075365A1
公开(公告)日：2007-04-05
申请号：US11242511
申请日：2005-10-03
申请人： Peter Mardilovich , Randy Hoffman , Gregory Herman
发明人： Peter Mardilovich , Randy Hoffman , Gregory Herman
IPC分类号： H01L27/12
CPC分类号： H01L29/6675 , H01L29/41733 , H01L29/78681
摘要： A thin-film transistor includes a substrate having a substantially outwardly protruding support structure formed thereon such that a portion adjacent to the structure is exposed. The support structure has opposed sidewalls sloped at an angle relative to the substrate surface. A stack is established over the portion and over a portion of an adjacent opposed sidewall. The stack includes an insulating layer. A channel material is established on at least a portion of the stack, thus forming a channel having a length substantially determined by a thickness of the insulating layer in relation to the adjacent opposed sidewall angle. A gate dielectric is established on at least a portion of the channel material and a gate electrode is established on at least a portion of the gate dielectric.
摘要翻译：薄膜晶体管包括在其上形成有基本上向外突出的支撑结构的基板，使得与结构相邻的部分被暴露。支撑结构具有相对于衬底表面倾斜一定角度的相对侧壁。在相邻的相对侧壁的部分和一部分上建立堆叠。堆叠包括绝缘层。在堆叠的至少一部分上建立通道材料，从而形成通道，其长度基本上由绝缘层的厚度相对于相邻的相对的侧壁角度确定。在沟道材料的至少一部分上建立栅极电介质，并且在栅极电介质的至少一部分上建立栅电极。

43. 发明申请

US20070034915A1 Transparent double-injection field-effect transistor 有权
标题翻译：透明双注射场效应晶体管
公开(公告)号：US20070034915A1
公开(公告)日：2007-02-15
申请号：US11582010
申请日：2006-10-17
申请人： Randy Hoffman
发明人： Randy Hoffman
IPC分类号： H01L29/78
CPC分类号： H01L29/78696 , H01L29/66969 , H01L29/786 , H01L29/78645 , H01L29/78648 , H01L29/78681 , H01L29/7869
摘要： A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
摘要翻译：双注入场效应晶体管具有阳极，阴极，基本上透明的通道，基本上透明的栅极绝缘体，以及至少一个基本上透明的栅电极。晶体管也可以具有基本透明的阳极和/或阴极。晶体管也可以形成在基本透明的基板上。电极触点和电互连引线也可以是基本透明的。还公开了制造和使用这种双注入场效应晶体管的方法。

44. 发明申请

US20070023750A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070023750A1
公开(公告)日：2007-02-01
申请号：US11543548
申请日：2006-10-04
申请人： Hai Chiang , Randy Hoffman , David Hong , Nicole Dehuff , John Wager
发明人： Hai Chiang , Randy Hoffman , David Hong , Nicole Dehuff , John Wager
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78648
摘要： A semiconductor device can include a channel including a zinc-indium oxide film.
摘要翻译：半导体器件可以包括包括锌 - 铟氧化物膜的沟道。

45. 发明申请

US20070007518A1 Encapsulation of nano-dimensional structures by oxidation 有权
标题翻译：通过氧化封装纳米尺寸结构
公开(公告)号：US20070007518A1
公开(公告)日：2007-01-11
申请号：US11174896
申请日：2005-07-05
申请人： Peter Mardilovich , Pavel Komilovich , Randy Hoffman
发明人： Peter Mardilovich , Pavel Komilovich , Randy Hoffman
IPC分类号： H01L29/10
CPC分类号： B81B1/00
摘要： This invention relates to a method of encapsulating nano-dimensional structures, comprising: depositing at least one material upon a substrate such that the material includes at least one portion; and creating an oxidized layer located substantially adjacent to the deposited material such that the at least one portion of the deposited material becomes substantially encapsulated by a portion of the oxidized layer.
摘要翻译：本发明涉及一种封装纳米尺寸结构的方法，包括：在衬底上沉积至少一种材料，使得该材料包括至少一部分; 以及产生基本上邻近沉积材料定位的氧化层，使得沉积材料的至少一部分基本上被氧化层的一部分包封。

46. 发明授权

US07132319B2 Transparent double-injection field-effect transistor 有权
公开(公告)号：US07132319B2
公开(公告)日：2006-11-07
申请号：US11237444
申请日：2005-09-27
申请人： Randy Hoffman
发明人： Randy Hoffman
IPC分类号： H01L21/00 , H01L21/84 , H01L21/44 , H01L29/76 , H01L29/745
CPC分类号： H01L29/78696 , H01L29/66969 , H01L29/786 , H01L29/78645 , H01L29/78648 , H01L29/78681 , H01L29/7869
摘要： A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

47. 发明申请

US20060220023A1 Thin-film device 审中-公开
标题翻译：薄膜装置
公开(公告)号：US20060220023A1
公开(公告)日：2006-10-05
申请号：US11072947
申请日：2005-03-03
申请人： Randy Hoffman , Gregory Herman , Curt Nelson
发明人： Randy Hoffman , Gregory Herman , Curt Nelson
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/76838 , H01L31/04
摘要： Embodiments of methods, apparatuses, devices and systems associated with a thin-film device are disclosed.
摘要翻译：公开了与薄膜装置相关联的方法，装置，装置和系统的实施例。

48. 发明申请

US20060088962A1 Method of forming a solution processed transistor having a multilayer dielectric 审中-公开
标题翻译：形成具有多层电介质的溶液处理晶体管的方法
公开(公告)号：US20060088962A1
公开(公告)日：2006-04-27
申请号：US10972229
申请日：2004-10-22
申请人： Gregory Herman , Peter Mardilovich , Randy Hoffman , Laura Kramer , Kurt Ulmer
发明人： Gregory Herman , Peter Mardilovich , Randy Hoffman , Laura Kramer , Kurt Ulmer
IPC分类号： H01L21/00
CPC分类号： H01L21/02282 , H01L21/02123 , H01L21/02172 , H01L21/022 , H01L21/316 , H01L28/56 , H01L29/4908
摘要： Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described.
摘要翻译：描述了用于形成具有多层电介质的溶液处理晶体管的方法，装置，器件和/或系统的实施例。

49. 发明申请

US20060079034A1 Method to form a passivation layer 有权
标题翻译：形成钝化层的方法
公开(公告)号：US20060079034A1
公开(公告)日：2006-04-13
申请号：US10964062
申请日：2004-10-12
申请人： Randy Hoffman , John Wager , David Hong , Hai Chiang
发明人： Randy Hoffman , John Wager , David Hong , Hai Chiang
IPC分类号： H01L21/84
CPC分类号： H01L29/7869 , H01L29/66969
摘要： Embodiments of methods, apparatuses, devices, and/or systems for forming a passivation layer are described.
摘要翻译：描述了用于形成钝化层的方法，装置，装置和/或系统的实施例。

50. 发明申请

US20060003485A1 Devices and methods of making the same 审中-公开
标题翻译：设备和制作方法
公开(公告)号：US20060003485A1
公开(公告)日：2006-01-05
申请号：US10881344
申请日：2004-06-30
申请人： Randy Hoffman , Peter Mardilovich
发明人： Randy Hoffman , Peter Mardilovich
IPC分类号： H01L21/00
CPC分类号： H01L29/45 , H01L21/28158 , H01L29/4908 , H01L29/7869
摘要： Devices including a substantially transparent dielectric and methods of forming such devices are disclosed.
摘要翻译：公开了包括基本透明电介质的器件和形成这种器件的方法。

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