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41. 发明申请

US20050009347A1 Method and apparatus for measuring electron density of plasma and plasma processing apparatus 有权
标题翻译：用于测量等离子体和等离子体处理装置的电子密度的方法和装置
公开(公告)号：US20050009347A1
公开(公告)日：2005-01-13
申请号：US10831757
申请日：2004-04-26
申请人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
发明人： Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
IPC分类号： H05H1/00 , C23C16/52 , C23F4/00 , G01N23/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461 , H01L21/66 , H05H1/46
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
摘要翻译：用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

42. 发明授权

US08824875B2 Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置和半导体制造装置的处理室中的加热部件的方法
公开(公告)号：US08824875B2
公开(公告)日：2014-09-02
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
IPC分类号： A21B2/00 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译：提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

43. 发明授权

US08777483B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US08777483B2
公开(公告)日：2014-07-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
IPC分类号： G01K1/00 , G01J5/00
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译：温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

44. 发明授权

US08764288B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US08764288B2
公开(公告)日：2014-07-01
申请号：US13476264
申请日：2012-05-21
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01J5/00 , G01B9/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

45. 发明授权

US08741095B2 Plasma processing apparatus, plasma processing method, and computer readable storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和计算机可读存储介质
公开(公告)号：US08741095B2
公开(公告)日：2014-06-03
申请号：US12415466
申请日：2009-03-31
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： C23C16/509 , H01L21/3065 , C23F1/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.
摘要翻译：等离子体处理装置包括真空排气处理室; 用于在所述处理室中支撑待处理的基板的第一电极; 处理气体供应单元，用于将处理气体供应到处理空间中; 等离子体激发单元，用于通过激励处理室中的处理气体来产生等离子体; 第一射频电源单元，用于向第一电极提供第一射频功率以将等离子体中的离子吸引到衬底; 以及用于以预定间隔调制第一射频功率的幅度的第一射频功率幅度调制单元。等离子体处理装置还包括第一射频功率频率调制单元，用于与第一射频功率的幅度调制基本同步地调制第一射频功率的频率。

46. 发明授权

US08426317B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08426317B2
公开(公告)日：2013-04-23
申请号：US12791095
申请日：2010-06-01
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： H01L21/302
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32642
摘要： An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.
摘要翻译：在不改变聚焦环的高度的情况下，有效地发现用于减少衬底的周边部分上的沉积物以及改善平衡处理结果的最佳施加电压。一种等离子体处理装置包括聚焦环，该聚焦环包括设置成围绕安装台的基板安装部分设置的介质环和设置在介质环上的导电环; 电压传感器，被配置为检测所述导电环的浮置电压; DC电源，被配置为向所述导电环施加DC电压。基于从导电环实际检测到的浮动电压，获得施加到导电环的最佳电压，并且基于每个等离子体处理的实际检测到的浮动电压的变化来调整最佳施加电压。

47. 发明授权

US07956310B2 Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media 有权
标题翻译：级，衬底处理装置，等离子体处理装置，级的控制方法，等离子体处理装置的控制方法和存储介质
公开(公告)号：US07956310B2
公开(公告)日：2011-06-07
申请号：US11529390
申请日：2006-09-29
申请人： Chishio Koshimizu , Tomohiro Suzuki
发明人： Chishio Koshimizu , Tomohiro Suzuki
IPC分类号： B23K10/00
CPC分类号： F27B17/0025 , F27B5/04 , G01K5/48 , G01K11/00 , H01L21/67248
摘要： A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.
摘要翻译：在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。温度测量装置200测量待处理的基板的温度。温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

48. 发明授权

US07952717B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US07952717B2
公开(公告)日：2011-05-31
申请号：US12043406
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01B9/02
CPC分类号： G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

49. 发明申请

US20100243608A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100243608A1
公开(公告)日：2010-09-30
申请号：US12750734
申请日：2010-03-31
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： B44C1/22 , C23C16/513
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/32183 , H01J37/3255 , H01J37/32577
摘要： There is provided a plasma processing apparatus capable of varying an AC ratio without installing a largely scaled-up movable unit. An etching apparatus 10, which performs a plasma process on a wafer W within a processing chamber, includes a control member which is installed such that at least a part of the control member is in contact with a plasma region within the processing chamber, and an impedance control circuit 210 which is connected with the control member and adjusts a ground capacitance of the plasma region by controlling an electrical connection state between the control member and a ground plane.
摘要翻译：提供了一种等离子体处理装置，其能够在不安装大型放大的可移动单元的情况下改变AC比。在处理室内对晶片W进行等离子体处理的蚀刻装置10包括控制部件，该控制部件安装成使得控制部件的至少一部分与处理室内的等离子体区域接触，阻抗控制电路210，其通过控制控制构件和接地面之间的电连接状态与控制构件连接并调整等离子体区域的接地电容。

50. 发明申请

US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN 有权
标题翻译：等离子体加工装置和温度测量方法及其使用的装置
公开(公告)号：US20100206482A1
公开(公告)日：2010-08-19
申请号：US12698616
申请日：2010-02-02
申请人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
发明人： Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
IPC分类号： C23F1/08 , G01J5/08 , G01K1/00 , C23C16/00
CPC分类号： H01L21/67248 , G01J5/0003 , G01J5/0007 , G01J5/041 , G01J5/045 , G01J5/048 , G01J5/08 , G01J5/0803 , G01J5/0806 , G01J5/0821 , G01J5/0846 , G01K11/00 , H01J2237/2001
摘要： A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
摘要翻译：一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

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