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41. 发明授权

US06878979B2 Spin switch and magnetic storage element using it 失效
标题翻译：旋转开关和磁性存储元件使用它
公开(公告)号：US06878979B2
公开(公告)日：2005-04-12
申请号：US10258313
申请日：2002-01-18
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L29/66 , H01L31/119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L27/222 , H01L29/66984
摘要： A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.
摘要翻译：可以用电压驱动的自旋开关。该自旋开关包括：铁磁材料; 与铁磁材料磁耦合的磁半导体; 磁耦合到磁性半导体的反铁磁材料; 和通过绝缘体连接到磁性半导体的电极。电极的电位变化导致磁性半导体在铁磁性状态和顺磁性状态之间产生可逆的转变。当磁性半导体变为铁磁性状态时，铁磁材料由于与磁性半导体的磁耦合而在预定方向上被磁化。

42. 发明授权

US06597547B1 Magnetoresistive device with an &agr;-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness 有权
标题翻译：具有α-Fe2O3反铁磁膜的磁阻器件和不同厚度的间接交换耦合膜层
公开(公告)号：US06597547B1
公开(公告)日：2003-07-22
申请号：US09162300
申请日：1998-09-28
申请人： Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita , Hiroshi Sakakima
发明人： Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译：本发明的磁阻效应器件包括多层膜。多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。反铁磁膜包括α-Fe2O3膜。多层膜的表面粗糙度为约0.5nm以下。

43. 发明授权

US06258470B1 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 有权
标题翻译：交换耦合膜，磁阻效应器件，磁阻有效头和用于生产交换耦合膜的方法
公开(公告)号：US06258470B1
公开(公告)日：2001-07-10
申请号：US09228703
申请日：1999-01-12
申请人： Hiroshi Sakakima , Eiichi Hirota , Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita
发明人： Hiroshi Sakakima , Eiichi Hirota , Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
摘要翻译：本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示氧原子; 2.8

44. 发明授权

US5841611A Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same 失效
标题翻译：磁阻效应器件和磁阻效应型头，存储器件和使用其的放大器件
公开(公告)号：US5841611A
公开(公告)日：1998-11-24
申请号：US429714
申请日：1995-04-27
申请人： Hiroshi Sakakima , Yousuke N Irie , Mitsuo Satomi , Yasuhiro Kawawake
发明人： Hiroshi Sakakima , Yousuke N Irie , Mitsuo Satomi , Yasuhiro Kawawake
IPC分类号： G01R33/09 , G06K19/06 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H03F7/02 , H03F15/00 , G11B5/127
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/3281 , H01L27/222 , H01L43/10 , G11B2005/3996 , G11B5/3925 , G11C2211/5616
摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
摘要翻译：本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。

45. 发明授权

US5277991A Magnetoresistive materials 失效
标题翻译：磁阻材料
公开(公告)号：US5277991A
公开(公告)日：1994-01-11
申请号：US840821
申请日：1992-02-25
申请人： Mitsuo Satomi , Hiroshi Sakakima
发明人： Mitsuo Satomi , Hiroshi Sakakima
IPC分类号： H01F10/32 , H01L43/10 , B32B15/01 , B32B15/20 , H01F1/00 , H01F10/08
CPC分类号： B82Y25/00 , H01F10/3281 , H01L43/10 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12632 , Y10T428/1291 , Y10T428/12917
摘要： Magnetoresistive material exhibiting a large ratio of resistance on the application of a low magnetic field applied at room temperature to the material. The material is composed of layers made primarily from Co with a thickness of 10-100.ANG., a second magnetic layer having a thickness of 10-100.ANG., both of which layers are alternately laminated through a non-magnetic layer composed mainly of copper having a thickness of about 20.ANG..
摘要翻译：在室温下施加低磁场的材料，表现出较大的电阻比的磁阻材料。该材料由厚度为10-100（Aangstroem）的Co主要由厚度为10-100（Aangstroem）的第二磁性层构成的层组成，这两层通过非磁性层交替层压，所述非磁性层由主要是厚度约为20（Aangstroem）的铜。

46. 发明授权

US5134653A Automatic dialing machine 失效
标题翻译：自动拨号机
公开(公告)号：US5134653A
公开(公告)日：1992-07-28
申请号：US485999
申请日：1990-02-27
申请人： Mitsuo Satomi , Kazuaki Oshita , Tetsuya Kuwahara
发明人： Mitsuo Satomi , Kazuaki Oshita , Tetsuya Kuwahara
IPC分类号： H04M1/274 , H04M1/2745 , H04N1/32
CPC分类号： H04N1/32058 , H04M1/274566 , H04N1/32037 , H04N2201/3209 , H04N2201/3273
摘要： An automatic dialing machine adapted to a facsimile machine having a telephone function comprises: a device for displaying an input number; a memory for storing part of telephone number and a coded number corresponding thereto; a speed dial key for inputing the coded number; a ten-key set for inputing a non-coded number; and a controller for displaying on the display device the coded number and non-coded number in turn and in series as they are input respectively from the speed dial key and ten-key set and further for performing a real-phone-number-dialing based on the displayed in-series number.
摘要翻译：适用于具有电话功能的传真机的自动拨号机包括：用于显示输入号码的装置; 用于存储部分电话号码的存储器和与其对应的编码数字; 用于输入编码的快速拨号键; 用于输入非编码数字的十键组; 以及控制器，用于在分别从快速拨号键和十键组输入时依次和串联地显示在显示装置上的编码数字和非编码数字，并进一步用于执行基于实际电话号码拨号在显示的序列号。

47. 发明授权

US5134501A Facsimile apparatus 失效
标题翻译： FACSIMILE APPARATUS
公开(公告)号：US5134501A
公开(公告)日：1992-07-28
申请号：US455600
申请日：1989-12-21
申请人： Mitsuo Satomi , Tooru Ohnishi
发明人： Mitsuo Satomi , Tooru Ohnishi
IPC分类号： H04N1/32
CPC分类号： H04N1/32122 , H04N1/32614 , H04N2201/3219 , H04N2201/3269 , H04N2201/3271
摘要： According to the present invention, names of remote stations with which communication often is carried out is registered in a registration means, by which an error report using receiving papers is prepared only for communication errors at the time when communication is carried out with such remote stations.The facsimile apparatus comprising a buffrermemory which decode and stores each control procedure signal, a registration means which registered whether it is necessary to prepare an error report or not, a specific station deciding means, a means which detects occurrence of communication errors, a printing unit, and a control unit which controls so as to drive the printing unit and print stored contents in the buffer memory.
摘要翻译：根据本发明，经常进行通信的远程站的名称被登记在登记装置中，通过该登记装置仅在与这些远程站进行通信时准备用于通信错误的接收纸张的错误报告。该传真装置包括一个解码和存储每个控制程序信号的一个buffrermemory，一个注册是否需要准备一个错误报告的登记装置，一个特定的站决定装置，一个检测通信错误的发生的装置，一个打印单元以及控制单元，其控制以驱动打印单元并将存储的内容打印在缓冲存储器中。

48. 发明授权

US4847983A Method of making a crystallized glass-bonded amorphous metal magnetic film-non-magnetic substrate magnetic head 失效
标题翻译：制造结晶玻璃结合无定形金属磁性膜非磁性基板磁头的方法
公开(公告)号：US4847983A
公开(公告)日：1989-07-18
申请号：US212141
申请日：1988-06-13
申请人： Mitsuo Satomi , Nobuyuki Kaminaka
发明人： Mitsuo Satomi , Nobuyuki Kaminaka
IPC分类号： G11B5/105 , G11B5/127 , G11B5/147 , G11B5/31
CPC分类号： G11B5/313 , G11B5/105 , G11B5/1475 , Y10T29/49043 , Y10T29/49048 , Y10T29/49057
摘要： A magnetic head having head core constituted by a sandwiched magnetic material on both side thereof by a substrate materials such as, and the magnetic material and the substrate materials are bonded by crystallized glass containing crystals such as gahnite, willemite or the like.
摘要翻译：具有通过基板材料等的两面由夹层磁性材料构成的磁芯的磁头，并且磁性材料和基板材料通过含有晶体，如流ite石，硅锌矿等的结晶玻璃结合。

49. 发明授权

US4437912A Amorphous magnetic alloys 失效
标题翻译：非晶磁性合金
公开(公告)号：US4437912A
公开(公告)日：1984-03-20
申请号：US321560
申请日：1981-11-16
申请人： Hiroshi Sakakima , Mitsuo Satomi , Harufumi Senno , Eiichi Hirota
发明人： Hiroshi Sakakima , Mitsuo Satomi , Harufumi Senno , Eiichi Hirota
IPC分类号： A63H27/32 , C22C45/00 , C22C45/02 , C22C45/04 , H01F1/153 , C22C19/00
CPC分类号： H01F1/153 , C22C45/008
摘要： Amorphous alloy consisting mainly of 60-94 atomic % of at least one transition metal, and over 2 atomic % but below 20 atomic % of niobium. The amorphous alloys according to the invention are high in wear resistance and corrosion resistance and have a high saturated magnetic flux density and soft magnetic properties. The amorphous alloys have particular utility as core materials for magnetic heads.
摘要翻译：主要由60-94原子％的至少一种过渡金属和超过2原子％但低于20原子％的铌组成的无定形合金。根据本发明的非晶合金具有高耐磨性和耐腐蚀性，并且具有高的饱和磁通密度和软磁性能。非晶合金作为磁头的核心材料具有特殊的用途。

50. 发明授权

US06950333B2 Magnetic memory and method for driving the same, and magnetic memory device using the same 有权
标题翻译：磁存储器及其驱动方法及使用其的磁存储器件
公开(公告)号：US06950333B2
公开(公告)日：2005-09-27
申请号：US10695731
申请日：2003-10-24
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita , Yoshio Kawashima
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita , Yoshio Kawashima
IPC分类号： G11C11/00 , G11C11/15 , G11C11/16 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L27/22
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/228
摘要： A magnetic memory of the present invention includes two or more memory layers and two or more tunnel layers that are stacked in the thickness direction of the layers. The two or more memory layers are connected electrically in series. A group of first layers includes at least one layer selected from the two or more memory layers. A group of second layers includes at least one layer selected from the two or more memory layers. A resistance change caused by magnetization reversal in the group of first layers differs from a resistance change caused by magnetization reversal in the group of second layers.
摘要翻译：本发明的磁存储器包括两层或多层存储层和两层或多层在层的厚度方向上层叠的隧道层。两个或更多个存储器层串联电连接。一组第一层包括从两个或更多个存储器层中选择的至少一个层。一组第二层包括从两个或更多个存储器层中选择的至少一个层。由第一层组中的磁化反转引起的电阻变化与由第二层组中的磁化反转引起的电阻变化不同。

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