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41. 发明授权

US06332359B1 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
标题翻译：半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装
公开(公告)号：US06332359B1
公开(公告)日：2001-12-25
申请号：US09241096
申请日：1999-02-01
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
IPC分类号： G01P1512
CPC分类号： G01P1/023 , G01P15/0802 , G01P15/0888 , G01P15/11 , G01P15/123 , G01P21/00 , H01F10/126 , H01F10/265 , H05K1/18
摘要： A sensor chip having a support frame part and sensor structure including at least one displaceable weight part, and a beam part for connecting the weight part to the support frame part. The sensor structure is formed on a silicon substrate through an insulating layer and the insulating layer between the sensor structure and the silicon substrate is removed. The beam part is formed of two parallel beams and the weight part is connected to the support frame part by two parallel beams. At least two semiconductor strain gauges are formed on the surface of the two respective parallel beams. The semiconductor chip may be contained in a package having a main surface for mounting the semiconductor sensor chip formed at a predetermined angle with respect to the surface of a printed circuit board for mounting the package. The main surface is provided with a plurality of terminals along two opposite sides thereof for connecting with input/output terminals of the semiconductor sensor chip. A bottom surface perpendicular to the main surface is provided with a plurality of pins for inserting into mounting holes of the circuit board.
摘要翻译：一种具有支撑框架部分和传感器结构的传感器芯片，所述传感器芯片包括至少一个位移重量部分和用于将所述重量部分连接到所述支撑框架部分的梁部分。传感器结构通过绝缘层形成在硅衬底上，并且去除传感器结构和硅衬底之间的绝缘层。梁部分由两个平行的梁形成，重物部分通过两个平行的梁连接到支撑框架部分。在两个相应的平行光束的表面上形成至少两个半导体应变计。半导体芯片可以包含在具有用于安装相对于用于安装封装的印刷电路板的表面的预定角度的半导体传感器芯片的主表面的封装中。主表面沿其两个相对侧设置有多个端子，用于连接半导体传感器芯片的输入/输出端子。垂直于主表面的底表面设置有多个插脚插入电路板的安装孔中。

42. 发明授权

US5987921A Method for making a semiconductor acceleration sensor 失效
标题翻译：制造半导体加速度传感器的方法
公开(公告)号：US5987921A
公开(公告)日：1999-11-23
申请号：US59341
申请日：1998-01-14
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/12 , G01P21/00 , H01L29/84 , C03C27/00
CPC分类号： G01P15/0802 , G01P15/12 , G01P15/122 , G01P21/00
摘要： A semiconductor acceleration sensor has a silicon detecting body and a glass substrate. The silicon detecting body has a weight, a supporting frame, and beams for coupling the weight to the supporting frame, which are integrally processed from a silicon wafer. At least one semiconductor strain gauge is formed on a surface of a beam. The glass substrate is electrostatically joined with the supporting frame of the silicon detecting body. Furthermore, a gap portion is formed between a surface of the glass substrate and a lower surface of the weight.
摘要翻译：半导体加速度传感器具有硅检测体和玻璃基板。硅检测体具有重量，支撑框架和用于将重物耦合到支撑框架的梁，其由硅晶片整体处理。在梁的表面上形成至少一个半导体应变片。玻璃基板与硅检测体的支撑框架静电连接。此外，在玻璃基板的表面和重量的下表面之间形成间隙部。

43. 发明授权

US5760290A Semiconductor acceleration sensor and testing method thereof 失效
标题翻译：半导体加速度传感器及其测试方法
公开(公告)号：US5760290A
公开(公告)日：1998-06-02
申请号：US553721
申请日：1995-10-23
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/12 , G01P21/00 , H01L29/84
CPC分类号： G01P15/0802 , G01P15/12 , G01P15/122 , G01P21/00
摘要： A semiconductor acceleration sensor has a silicon detecting body and a glass substrate. The silicon detecting body has a weight, a supporting frame, and beams for coupling the weight to the supporting frame, which are integrally processed from a silicon wafer. At least one semiconductor strain gauge is formed on a surface of a beam. The glass substrate is electrostatically joined with the supporting frame of the silicon detecting body. Furthermore, a gap portion is formed between a surface of the glass substrate and a lower surface of the weight.
摘要翻译：半导体加速度传感器具有硅检测体和玻璃基板。硅检测体具有重量，支撑框架和用于将重物耦合到支撑框架的梁，其由硅晶片整体处理。在梁的表面上形成至少一个半导体应变片。玻璃基板与硅检测体的支撑框架静电连接。此外，在玻璃基板的表面和重量的下表面之间形成间隙部。

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