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41. 发明专利

JPS61189642A PLASMA REACTOR 失效
公开(公告)号：JPS61189642A
公开(公告)日：1986-08-23
申请号：JP3112785
申请日：1985-02-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , SADAHIRO SHIGEKI , CHIBA AKIRA , SAKAGAMI KIYOSHI
IPC分类号： H01L21/205 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain the titled apparatus which can process a plurality of wafers at a time without deterioration in the uniformity of reaction by a method wherein reaction chambers are provided so as to utilize the gas plasma generated and branched in a plasma generation chamber or generated in a plurality of plasma generation chambers under the same condition. CONSTITUTION:Two plasma generation chambers 1a, 1b are provided, and magnetic coils 2a, 2b are wound around each. When a microwave power is impressed through a microwave introduction port 5 with the flow of a reaction gas through a gas introduction port 3, a high-density gas plasma generates by the induction of electron-cyclotron resonance under the same condition in each of the generation chambers 2a, 2b. The gas plasma of the same condition generated in each of them 2a, 2b is guided by lead-out electrodes 6a, 6b, 6c, 6d to the surfaces of samples 9a, 9b on sample holding tables 8a, 8b installed to reaction chambers 7a, 7b, resulting in etching or the formation of thin films. As a result, two wafers can be processed at a time, and the processing capacity can be improved.

42. 发明专利

JPS618925A Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：JPS618925A
公开(公告)日：1986-01-16
申请号：JP12977184
申请日：1984-06-23
申请人： Mitsubishi Electric Corp
发明人： ITAKURA HIDEAKI
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/3065
摘要： PURPOSE:To advance uniform etching regardless of areas of openings, by stopping at least one time gas introduction into the reacting vessel and application of high frequency power in the course of the etching to keep a high vaccum so as to remove reaction byproducts. CONSTITUTION:In a reacting vessel, concaves 10, 11 having respective opening areas S1 and S2 are both etched until reaching a depth of d3. Next gas-introduction into the reacting vessel and application of high frequency power are stopped and only exhausting is performed to keep a high vacuum. In order to keep the high vacuum, a sufficient time for removing reaction byproduct gas 9 from the concaves 10, 11 are required. Thereafter, the gas-introduction and application of high frequency power are started to etch the concaves 10, 11 by employing produced reactive ions I. In this way, regardless of openings having different areas, concaves 12, 13 each having the same desired depth d1 can be formed.
摘要翻译：目的：无论开孔面积如何，通过停止至少一次气体引入反应容器和在蚀刻过程中施加高频功率以保持高真空度，从而消除反应副产物，从而推进均匀蚀刻。构成：在反应容器中，具有相应的开口区域S1和S2的凹陷区域10,11被蚀刻直到达到深度d3。下一次气体引入反应容器并施加高频功率，并且仅进行排气以保持高真空。为了保持高真空度，需要足够的时间从凹部10,11除去反应副产物气体9。此后，通过使用产生的反应离子I开始气体引入和施加高频功率来蚀刻凹部10,11。这样，不管具有不同区域的开口，凹部12,13各自具有相同的期望深度d1 可以形成。

43. 发明专利

JPS60202954A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60202954A
公开(公告)日：1985-10-14
申请号：JP6137384
申请日：1984-03-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , UOTANI SHIGEO , NISHIOKA KIYUUSAKU , KAWAI AKIRA
IPC分类号： H01L23/522 , H01L21/768 , H01L21/88
摘要： PURPOSE:To ensure a connection by forming a pattern consisting of a conductive substrance to a low stepped section and wiring a wire when there are stepped sections on the surfaces of a plurality of regions. CONSTITUTION:A conductive substance layer 10 is shaped on the whole surface, and a photosensitive resin pattern 11 is formed only to a section afterward functioning as an opening section for connection on an impurity diffusion region 2 through a photoengraving process. The photosensitive resin pattern 11 is removed through etching, and an aluminum pattern 10' is shaped. An insulating layer 5 is formed flatly on the whole surface, and opening sections 5a' and 5b' are shaped through etching. A film such as an aluminum film as a conductive substance 7 for connection is formed, thus obtaining a wiring pattern.

44. 发明专利

JPS60154530A RECESSION FORMING PROCESS IN SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS60154530A
公开(公告)日：1985-08-14
申请号：JP1057684
申请日：1984-01-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SHIYUUICHI , OONO YOSHIKAZU , ITAKURA HIDEAKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To form a recession with specified depth without fail by a method wherein an epitaxial layer containing the second impurity different from the first impurity on the surface of a semiconductor substrate is provided with the thickness similar to the specified depth of a recession to be etched down to the point where implanted impurities being contained change into the second impurities. CONSTITUTION:An Si layer 6 containing B is epitaxially formed on an Si substrate 5 containing As so that the thickness of the layer 6 may equal the depth of a recession to be formed. Then RIE is performed utilizing resist mask 2 while jetting out particles 7 are led to a mass analyzer 9 to detect any impurity atoms. When the depth of recession 3 reaches the specified value, the detected impurity changes from B to As. At this time, the etching process is stopped while removing the mask 2 and the recession with specified depth may be formed easily without fail.

45. 发明专利

JPS6091662A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6091662A
公开(公告)日：1985-05-23
申请号：JP20174883
申请日：1983-10-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , NISHIHATA MIKIO , MIYAKE KUNIAKI , NISHIOKA KIYUUSAKU
IPC分类号： H01L21/822 , H01L27/04 , H01L27/06
摘要： PURPOSE:To obtain a semiconductor device having large capacitance or polyfunctions by one chip by each forming single crystal semiconductor layers on both the surface and the back of a substrate and forming semiconductor elements having the same function or mutually different functions to several single crystal semiconductor layer. CONSTITUTION:Single crystal silicon layers 2 and 3 are each grown on both the surface and the back of an insulating substrate 1, such as a single crystal silicon board, a sapphire or the like in an epitaxial manner. MOS type or bipolar type elements are formed on the surface sections of these layers 2 and 3 through the same process, and these elements are connected. When one layer is used for a sensor element and the other layer for a memory elements, etc., the elements having mutually different functions can be formed to one chip.

46. 发明专利

JPS6057629A FORMATION OF THIN-FILM PATTERN 失效
公开(公告)号：JPS6057629A
公开(公告)日：1985-04-03
申请号：JP16598883
申请日：1983-09-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , OGAWA TOSHIAKI , SHIBANO TERUO
IPC分类号： G03F7/20 , G03F7/09 , H01L21/027
摘要： PURPOSE:To obtain a resin pattern having a form with no constriction part even when a thin-film has high surface reflectivity and there is a stepped section in the thin-film by executing treatment is which the surface reflectivity of the thin- film is inhibited immediately after the formation of the thin-film onto a semiconductor substrate. CONSTITUTION:A thin-film 4 having high surface reflectivity is formed on a semiconductor substrate 1, and thermally treated in a furnace having an oxygen atmosphere, thus shaping a reflection inhibiting treating layer 14 on the surface of the film 4. The reflectivity of said layer 14 is reduced up to approximately 70% through the heat treatment. A resin pattern 5a is formed through the application, exposure nd development of a photosensitive resin. The pattern 5a acquired in this manner is not constricted by excessive exposure at stepped sections 10a, 10b. Accordingly, constrictions at stepped-section corresponding sections 11a and 11b in a thin-film pattern 4a can be removed regarding the thin- film pattern 4a obtained through the selective etching removal of the thin-film 4 while using the pattern 5a as a mask and the removal of the pattern 5a.

47. 发明专利

JPS6042821A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6042821A
公开(公告)日：1985-03-07
申请号：JP15128183
申请日：1983-08-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： SATOU SHINICHI , SAKAEMORI TAKANAO , ITAKURA HIDEAKI , YONEDA MASAHIRO , MIYAKE KUNIAKI , NAKAJIMA MASAYUKI
IPC分类号： H01L29/78 , H01L21/28
摘要： PURPOSE:To obtain the well-difined contact window without a step difference and to obtain the high-density and high-reliability device by a method wherein a contact hole forming part of an si substrate is covered with an Si3N4 film and an SiO2 film and a PSG film are laminted, after which the PSG film is opened more widely than the Si3N4 film and then the Si3N4 film is removed. CONSTITUTION:After forming a gate electrode 3, source and drain 4, an Si3N4 film 11 is selectively arranged on a contact window part and the substrate is covered with a thermal oxidation film 5 and further a PSG film 6 is laminated by a CVD method. The PSG6 is removed by a CF4-group isotropic plasma etching with using the resist mask 7 which is opened more widely than the Si3N4 film 11 and the Si3N4 film 11 is exposed. Next, the resist 7 is removed and the Si3N4 film 11 is etched by the CF4-group plasma to form the desired minute window 12. An Al wiring 8 is arranged there. In this constitution, a cross section of the contact window shows a shape without a step difference so that disconnection does not occur and a good ohmic contact can be obtained thereby offering the high-density and high-reliability device.

48. 发明专利

JPS59158525A Method for forming aluminum alloy film pattern 失效
标题翻译：形成铝合金薄膜图案的方法
公开(公告)号：JPS59158525A
公开(公告)日：1984-09-08
申请号：JP3415583
申请日：1983-02-28
申请人： Mitsubishi Electric Corp
发明人： ITAKURA HIDEAKI , NAGATOMO MASAO , NAKAJIMA MASAYUKI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To prevent the generation of pattern defects after the material to be processed has been picked out into the atmospheric air by a method wherein, after a plasma etching process has been performed using chlorine gas, a process wherein chlorine remaining on the surface of the material to be processed will be removed is performed. CONSTITUTION:A mask pattern is formed on an aluminum silicon alloy film using photosensitive resin, it is used as the material to be processed, and placed on the electrode in the lower part of a plasma etching vessel having a paralleled flat plate electrode. After the etching vessel has been brought into one atmospheric pressure or below, CCl4 gas and He gas are introduced therein, gas plasma is generated by applying a high frequency voltage while the desired gas pressure is being maintained using an exhaust mechanism, and the alloy film on the part which is not covered by the mask pattern is removed. Subsequently, hydrogen gas is introduced into the etching vessel, and gas plasma is generated by applying high frequency voltage again while the prescribed gas pressure is being maintained by the exhausting mechanism.
摘要翻译：目的：为了防止在待处理材料被选出到大气中之后产生图案缺陷，其中在使用氯气进行等离子体蚀刻工艺之后，其中残留在将被处理的材料将被去除。构成：使用光敏树脂在铝硅合金膜上形成掩模图案，将其用作待处理材料，并放置在具有平行平板电极的等离子体蚀刻容器的下部的电极上。在蚀刻容器达到一个大气压以上之后，将CCl 4气体和He气体引入其中，通过施加高频电压而产生气体等离子体，同时使用排气机构保持所需的气体压力，并且合金膜在未被掩模图案覆盖的部分被去除。随后，将氢气引入到蚀刻容器中，并且在通过排气机构保持规定的气体压力的同时再次施加高频电压来产生气体等离子体。

49. 发明专利

JPS59155930A Forming method of minute pattern 失效
标题翻译：分形式的形成方法
公开(公告)号：JPS59155930A
公开(公告)日：1984-09-05
申请号：JP3121383
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： WAKAMIYA WATARU , ITAKURA HIDEAKI , TAKAYAMA KENJI , NISHIOKA KIYUUSAKU , HATANAKA MASAHIRO , NAKAJIMA MASAYUKI
IPC分类号： G03F7/26 , G03F7/095 , G03F7/20 , H01L21/027
CPC分类号： G03F7/095
摘要： PURPOSE:To obtain a reversely inclined layer of a minute pattern fitted to a lift-off through one-time ultraviolet beam irradiation without generating an excessive boundary layer by laminating and forming a photosensitive film as a first layer and a photosensitive film as a second layer, a kind thereof is the same as the film but a gamma value and sensitivity thereof differ, on a semiconductor substrate and beam-transferring and developing the surface. CONSTITUTION:A first positive type resist layer 12 photosensitized to far ultraviolet beams is applied on a semiconductor substrate 11 as a photosensitive film as a first layer, and a second positive type resist layer 13, a kind thereof is the same as the layer 12 but a gamma value and sensitivity thereof are lower, is laminated and applied onto the layer 12. A solvent contained in these layers is evaporated at a proper temperature, ultraviolet beams 15 are irradiated through mask patterns 14, and resists in exposed sections are removed through development. Accordingly, development advances up to the layer 12 from the layer 13 while intruding to the inside of the layer 12, and reversely inclined layers effective for a lift-off are obtained, thus preventing the generation of an excessive boundary layer between the layers 12 and 13.
摘要翻译：目的：通过一次紫外线照射获得装配到剥离的微小图案的反向倾斜层，而不会通过层压和形成感光膜作为第一层而产生过量的边界层，并且将感光膜作为第二层，其类型与膜相同，但是在半导体衬底上的伽马值和灵敏度不同，并且传播和显影表面。构成：对作为感光性膜的半导体基板11作为第一层施加对远紫外线光敏的第一正型抗蚀剂层12，第二正型抗蚀剂层13的种类与层12相同，但是其伽马值和灵敏度较低，被层压并施加到层12上。这些层中包含的溶剂在适当的温度下蒸发，通过掩模图案14照射紫外光束15，并通过显影除去曝光部分中的抗蚀剂。因此，显影从层13进入到层12的同时进入到层12的内部，并且获得了对剥离有效的反向倾斜层，从而防止在层12和层12之间产生过量的边界层 13。

50. 发明专利

JPS59155839A Mask for transferring pattern 失效
标题翻译：掩码传输模式
公开(公告)号：JPS59155839A
公开(公告)日：1984-09-05
申请号：JP3121183
申请日：1983-02-25
申请人： Mitsubishi Electric Corp
发明人： HATANAKA MASAHIRO , TAKAYAMA KENJI , NAKAJIMA MASAYUKI , OOGA HIROTOMO , MIYAKE KUNIAKI , ITAKURA HIDEAKI
IPC分类号： G03F1/00 , G03F1/54 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70191 , G03F1/50
摘要： PURPOSE:To obtain a pattern with high accuracy by uniform exposing over the entire surface by providing a light shielding film at the thickness changed in accordance with the thickness of a photosensitive resin on the surface of a transparent mask blank material for forming a pattern of the photosensitive resin on a stepped base surface. CONSTITUTION:The thickness of a photosensitive resin film 5 is thinner on projections 3 than the thickness of the film 5 on a semiconductor substrate 4 or the like where there are no projections 3 if the film 5 is provided on the base surface of the substrate 4 having the projections 3. A light shielding film 9 of metallic Cr, etc. is formed on the surface of a transparent mask blank material 1 so as to decrease the thickness of the parts 13 corresponding to the projections 3 in accordance with the thickness of the film 5. The photosensitive resin is uniformly exposed as shown by exposing arrows 10 by using such mask and is developed, by which parts 11, 12 to be exposed in a prescribed pattern are formed on the projections 3 as well without leaving the remaining resist thereon.
摘要翻译：目的：为了通过在透明掩模材料的表面上的感光性树脂的厚度变化的厚度提供遮光膜，通过在整个表面上均匀曝光来获得高精度的图案，以形成图案的图案感光树脂在台阶基面上。构成：如果膜5设置在基板4的基面上，则在突起3上的感光性树脂膜5的厚度比没有突起3的半导体基板4等上的膜5的厚度薄具有突起3.在透明掩模坯料1的表面上形成金属Cr等的遮光膜9，以便根据厚度来减小对应于突起3的部分13的厚度感光性树脂通过使用这种掩模通过暴露箭头10所示均匀地曝光，并且显影，并且在凸起3上形成要以规定图案露出的部分11,12，而不在其上留下剩余的抗蚀剂。

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