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    • 42. 发明授权
    • Thin-film electroluminescent display and method of fabricating same
    • 薄膜电致发光显示器及其制造方法
    • US5691738A
    • 1997-11-25
    • US413109
    • 1995-03-29
    • Masumi AraiNobuei ItoTadashi Hattori
    • Masumi AraiNobuei ItoTadashi Hattori
    • G04G9/00G01D7/00G01D11/28H05B33/06H05B33/10H05B33/12H05B33/26G06F3/14
    • H05B33/06H05B33/12H05B33/26
    • A thin film electroluminescent display is capable of effectively preventing dielectric breakdown between both electrodes. A first transparent electrode layer, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer are laminated in that order on a first glass substrate to form a first light-emitting element. A second light-emitting element is fabricated in substantially the same way. A voltage is applied between the first and second electrode layers to cause the luminescent layers between both electrode layers to emit. As a result, desired characters are displayed. Those corners of the first and second electrodes disposed opposite to each other which are located within the planes of the electrode layers have round portions. The radius of circle of these round portions is in excess of a given value. This prevents concentration of the electric field on the corners of the electrodes.
    • 薄膜电致发光显示器能够有效地防止两个电极之间的电介质击穿。 第一透明电极层,第一电介质层,发光层,第二电介质层和第二透明电极层依次层叠在第一玻璃基板上,形成第一发光元件。 以基本相同的方式制造第二发光元件。 在第一和第二电极层之间施加电压以使两个电极层之间的发光层发射。 结果,显示所需的字符。 位于电极层的平面内的彼此相对设置的第一和第二电极的角部具有圆形部分。 这些圆形部分的圆半径超过给定值。 这防止了电极的电场的集中。
    • 44. 发明授权
    • Apparatus for forming diamond film
    • 用于形成金刚石膜的装置
    • US5314540A
    • 1994-05-24
    • US855742
    • 1992-03-23
    • Satoshi NakamuraMinoru YamamotoNobuei ItoTadasi Hattori
    • Satoshi NakamuraMinoru YamamotoNobuei ItoTadasi Hattori
    • C23C16/27C23C16/513H01J37/32H05H1/48C23C16/00C23C16/50
    • C23C16/276C23C16/513H01J37/32055H01J37/32587H05H1/48
    • Apparatus and process for synthesizing a diamond film of high purity at a high rate. Mixture gas of hydrocarbon gas and hydrogen gas is introduced into an arc discharge to produce a gas plasma. This gas plasma is blown against a substrate to deposit diamond. A plasma current power supply is connected with a third electrode disposed above the substrate to place the third electrode at a positive potential. An electrical current is supplied into the gas plasma from the third electrode. Flow of the electrical current through the plasma promotes the decomposition of the hydrogen and hydrocarbon. A diamond film of high purity can be deposited at a high rate. The invention is characterized in that the substrate is placed at a lower potential than the third electrode or the direction of the electrical current intersects the flow of the gas plasma although the electrical current is passed through the plasma. Therefore, it is unlikely that the accelerated electrons reach the substrate, elevating its temperature. Hence, diamond of high quality can be synthesized.
    • 用于以高速率合成高纯度金刚石膜的装置和方法。 将碳氢化合物气体和氢气的混合气体引入电弧放电以产生气体等离子体。 将该气体等离子体吹向基板以沉积金刚石。 等离子体电流电源与设置在衬底上方的第三电极连接以将第三电极置于正电位。 从第三电极向气体等离子体供给电流。 通过等离子体的电流的流动促进了氢和烃的分解。 高纯度的金刚石膜可以高速沉积。 本发明的特征在于,尽管电流通过等离子体,但是基板被放置在比第三电极低的电位或电流的方向与气体等离子体的流动相交。 因此,加速电子不可能到达基板,升高其温度。 因此,可以合成高质量的金刚石。
    • 45. 发明授权
    • Electrically insulating ceramic sintered body
    • 电绝缘陶瓷烧结体
    • US4814581A
    • 1989-03-21
    • US106516
    • 1987-10-09
    • Naochika NunogakiTetsuo ToyamaNobuei ItoKazuhiro Inoguchi
    • Naochika NunogakiTetsuo ToyamaNobuei ItoKazuhiro Inoguchi
    • C04B35/581C04B35/584C04B35/593C04B35/597F23Q7/00F23Q7/22
    • F23Q7/001C04B35/581C04B35/584C04B35/593C04B35/597F23Q2007/004
    • An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and .beta.-sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive. The sintered body has the structure that particles of the additive cohere and the cohering additive particles are dispersed in particles of the basic material so as to be surrounded by the particles of the basic material and separated from adjacent cohering additive particles by the particles of the basic material. When the sintered body is used as a heater supporting member of the ceramic glow plug, the thermal expansion coefficient thereof can be controlled in accordance with that of the heater, and a high specific resistance of not less than 10.sup.5 .OMEGA. cm can be obtained.
    • 适合用于陶瓷电热塞的电绝缘陶瓷烧结体例如通过焙烧75〜95体积%的基材,25〜5体积%的添加剂和烧结助剂的混合粉末而形成。 基本材料由选自氮化硅,氮化铝和β-赛隆的至少一种材料组成。 所述添加剂由选自由硅化物,碳化物,氮化物和金属硼化物组成的组中的至少一种材料构成,所述添加剂的热膨胀系数大于所述基体材料的热膨胀系数。 烧结助剂由碱性物质和添加剂的总量的3〜50重量%的氧化铝之一构成,尖晶石为碱性物质总量的2〜15重量% 和添加剂。 烧结体具有以下结构:添加剂团聚体和聚结助剂添加剂颗粒分散在碱性材料的颗粒中,以便被碱性物质的颗粒包围,并与碱性物质的颗粒分离 材料。 当烧结体用作陶瓷预热塞的加热器支撑构件时,可以根据加热器的热膨胀系数来控制其热膨胀系数,并且可以获得不小于105欧姆·厘米的高电阻率。
    • 49. 发明授权
    • Electroluminescence element and process for fabricating same
    • 电致发光元件及其制造方法
    • US5763111A
    • 1998-06-09
    • US631158
    • 1996-04-12
    • Masayuki KatayamaAtsushi MizutaniYutaka HattoriNobuei Ito
    • Masayuki KatayamaAtsushi MizutaniYutaka HattoriNobuei Ito
    • C09K11/77H05B33/10H05B33/14H05B33/00
    • H05B33/14C09K11/776H05B33/10Y10S428/917
    • An electroluminescence element including at least an insulating substrate, a first electrode, a first insulating layer, a luminescent layer having at least one side constructed and arranged to allow light to pass out of the electroluminescence element, a second insulating layer and a second electrode in this order in a stack, with the components on the at least one side of the luminescent layer being optically transparent. The luminescent layer includes a base material formed from a II-VI compound semiconductor, at least one rare earth element, and at least one halogen element substituted for a VI group element at a lattice site of the VI group element of the II-VI compound semiconductor and located in the vicinity of the at least one rare earth element. The luminescent layer has a luminescence spectrum in which, in addition to the original emission peaks of the at least one rare earth element, some of the original emission peaks have at least one split emission peak located within a 10 nm wavelength range thereof.
    • 一种电致发光元件,其至少包括绝缘基板,第一电极,第一绝缘层,具有至少一个侧面的发光层,所述至少一个侧面构造和布置成允许光从电致发光元件中通过,第二绝缘层和第二电极 堆叠中的这种顺序与发光层的至少一侧上的组分是光学透明的。 发光层包括由II-VI化合物半导体形成的基材,至少一种稀土元素,以及在II-VI化合物的VI族元素的晶格位置取代VI族元素的至少一种卤素元素 并且位于所述至少一个稀土元素的附近。 发光层具有发光光谱,其中除了至少一种稀土元素的原始发射峰之外,一些原始发射峰具有位于其10nm波长范围内的至少一个分裂发射峰。