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41. 发明授权

US07808334B2 Oscillation driver circuit, oscillation driver device, physical quantity measurement circuit, physical quantity measurement device, and electronic instrument 有权
标题翻译：振荡驱动电路，振荡驱动装置，物理量测量电路，物理量测量装置和电子仪器
公开(公告)号：US07808334B2
公开(公告)日：2010-10-05
申请号：US12177607
申请日：2008-07-22
申请人： Naoki Yoshida , Masahiro Kanai , Eitaro Otsuka
发明人： Naoki Yoshida , Masahiro Kanai , Eitaro Otsuka
IPC分类号： H03L5/00 , H03B5/36 , G01P15/09
CPC分类号： G01F1/8431 , G01F1/8422
摘要： An oscillation driver circuit that drives a physical quantity transducer includes a one-input/two-output comparator. The one-input/two-output comparator includes a shared differential section that compares a voltage signal input from a drive current/voltage conversion amplifier circuit with a given voltage, a first output section that receives a signal output from the differential section, variably adjusts a voltage amplitude of the received signal, and outputs the resulting signal, and a second output section that receives the signal output from the differential section, and outputs a synchronous detection reference signal of which the voltage amplitude is fixed.
摘要翻译：驱动物理量传感器的振荡驱动器电路包括一个输入/双输出比较器。单输入/双输出比较器包括共用差分部分，其将从驱动电流/电压转换放大器电路输入的电压信号与给定电压进行比较，接收从差分部分输出的信号的第一输出部分可变地调整接收信号的电压振幅，并输出结果信号;以及第二输出部，其接收从差分部输出的信号，并输出电压幅度固定的同步检波基准信号。

42. 发明授权

US07587989B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07587989B2
公开(公告)日：2009-09-15
申请号：US10755300
申请日：2004-01-13
申请人： Yukito Aota , Masahiro Kanai
发明人： Yukito Aota , Masahiro Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32532 , C23C16/515
摘要： In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.
摘要翻译：在等离子体处理方法中，在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘，并且阴极电极和导体板被屏蔽壁包围，使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。由此，实现了高质量的高速等离子体处理。

43. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

44. 发明申请

US20090013785A1 Detection circuit, physical quantity measurement circuit, physical quantity measurement device, and electronic instrument 有权
标题翻译：检测电路，物理量测量电路，物理量测量装置和电子仪器
公开(公告)号：US20090013785A1
公开(公告)日：2009-01-15
申请号：US12155383
申请日：2008-06-03
申请人： Naoki Yoshida , Masahiro Kanai , Eitaro Otsuka
发明人： Naoki Yoshida , Masahiro Kanai , Eitaro Otsuka
IPC分类号： G01P15/00
CPC分类号： G01P15/08 , G01C19/56 , G01C19/5649 , G01D3/02 , G01D18/00 , H03F3/45475 , H03F2200/261 , H03F2203/45138 , H03F2203/45526 , H03F2203/45616
摘要： A detection circuit includes a detection terminal to which an alternating current signal from a physical quantity transducer is input, a detection current/voltage conversion amplifier circuit that converts the alternating current signal input through the detection terminal into a voltage signal, an evaluation terminal that supplies an evaluation voltage signal to the detection current/voltage conversion amplifier circuit, an input resistor that has a given resistance ratio with respect to a feedback resistor; and a switch circuit of the detection circuit provided in a signal path that connects the evaluation terminal and an input node of the detection current/voltage conversion amplifier circuit.
摘要翻译：检测电路包括：输入来自物理量换能器的交流信号的检测端子;将通过检测端子输入的交流信号转换为电压信号的检测电流/电压转换放大电路;供给对检测电流/电压转换放大器电路的评估电压信号，相对于反馈电阻具有给定电阻比的输入电阻; 以及检测电路的开关电路，设置在连接评估终端和检测电流/电压转换放大器电路的输入节点的信号路径中。

45. 发明授权

US07324146B2 Image processing device, image processing method and solid-state image-pickup device 有权
标题翻译：图像处理装置，图像处理方法和固态图像拾取装置
公开(公告)号：US07324146B2
公开(公告)日：2008-01-29
申请号：US10763126
申请日：2004-01-22
申请人： Masahiro Kanai
发明人： Masahiro Kanai
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： G01V8/20
摘要： An image processing device and method are provided. In a method of reading an image signal from a solid-state image-pickup element where a plurality of unit pixels including a transistor for detecting a light signal and a photo diode are arranged in a matrix, shift data applied to a line for reading out an image signal, which outputs a signal for selecting a line for reading out an image signal, is output to a shift register connected to a line for reading out an image signal, when the number of lines between line for reading out an image signal and line for clearing an image signal are equal to or less than the number of lines in the matrix and the condition for picking an image up is changed.
摘要翻译：提供了图像处理装置和方法。在从固态图像拾取元件读取图像信号的方法中，其中包括用于检测光信号的晶体管和光电二极管的多个单位像素被布置在矩阵中，施加到用于读出的行的移位数据输出用于选择用于读出图像信号的线的信号的图像信号，当用于读出图像信号的线和用于读出图像信号的行之间的行数被输出到连接到用于读出图像信号的线的移位寄存器用于清除图像信号的行等于或小于矩阵中的行数，并且用于选择图像上升的条件被改变。

46. 发明申请

US20070169890A1 EXHAUST PROCESSING METHOD, PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：排气处理方法，等离子体处理方法和等离子体处理装置
公开(公告)号：US20070169890A1
公开(公告)日：2007-07-26
申请号：US11694889
申请日：2007-03-30
申请人： TAKESHI SHISHIDO , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
发明人： TAKESHI SHISHIDO , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Yasuyoshi Takai , Tadashi Hori , Koichiro Moriyama , Hidetoshi Tsuzuki , Hiroyuki Ozaki
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32844 , C23C14/564 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
摘要翻译：化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

47. 发明授权

US07126203B2 Semiconductor device having a capacitance device 失效
标题翻译：具有电容器件的半导体器件
公开(公告)号：US07126203B2
公开(公告)日：2006-10-24
申请号：US11101448
申请日：2005-04-08
申请人： Masahiro Kanai
发明人： Masahiro Kanai
IPC分类号： H01L29/00
CPC分类号： H01L27/11568 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/11573 , H01L28/60 , H01L29/42324 , H01L29/7881
摘要： A semiconductor device having an isolation region formed in a semiconductor substrate and a capacitance device formed above that isolation region. The capacitance device has a first capacitor conductive layer disposed above the isolation region and a second capacitor conductive layer in the shape of a side wall formed along one side surface of the first capacitor conductive layer. The second capacitor conductive layer is disposed facing the first capacitor conductive layer, with a first capacitor insulating layer interposed.
摘要翻译：具有形成在半导体衬底中的隔离区域和形成在该隔离区域上方的电容器件的半导体器件。电容元件具有配置在隔离区域上方的第一电容器导电层和沿着第一电容器导电层的一个侧面形成的侧壁形状的第二电容器导电层。第二电容器导电层被设置为面对第一电容器导电层，其中插入有第一电容器绝缘层。

48. 发明授权

US06922357B2 Non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US06922357B2
公开(公告)日：2005-07-26
申请号：US10377707
申请日：2003-03-04
申请人： Teruhiko Kamei , Masahiro Kanai
发明人： Teruhiko Kamei , Masahiro Kanai
IPC分类号： G11C16/04 , G11C7/18 , G11C16/06 , G11C16/26 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/26 , G11C7/18 , G11C16/0475 , G11C16/0491 , G11C2211/4013
摘要： A non-volatile semiconductor memory device enabling reading at high speed has a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, each of the memory cells having first and second non-volatile memory elements that are controlled by one word gate and first and second control gates. One of the first and second non-volatile memory elements stores data, but the other does not function as an element which stores data.
摘要翻译：能够高速读取的非易失性半导体存储器件具有存储单元阵列，该存储单元阵列包括沿列方向和行方向排列的多个存储单元，每个存储单元具有被控制的第一和第二非易失性存储元件一个字门和第一和第二控制门。第一和第二非易失性存储器元件中的一个存储数据，但另一个不用作存储数据的元件。

49. 发明授权

US06812164B2 Method and apparatus for ionization film formation 失效
标题翻译：电离膜形成的方法和装置
公开(公告)号：US06812164B2
公开(公告)日：2004-11-02
申请号：US10350019
申请日：2003-01-24
申请人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
发明人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
IPC分类号： H01L2131
CPC分类号： C23C14/046 , C23C14/32 , C23C14/355 , H01J2237/3137
摘要： A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要翻译：提供了一种用于通过用热阴极系统的电离机构离子化蒸发的颗粒以将离子化的颗粒注入基底而形成沉积膜的电离膜的形成方法。该方法包括将He气引入电离机构的步骤。

50. 发明授权

US06667240B2 Method and apparatus for forming deposited film 失效
公开(公告)号：US06667240B2
公开(公告)日：2003-12-23
申请号：US09800724
申请日：2001-03-08
申请人： Hiroyuki Ozaki , Masahiro Kanai , Naoto Okada , Koichiro Moriyama , Hiroshi Shimoda
发明人： Hiroyuki Ozaki , Masahiro Kanai , Naoto Okada , Koichiro Moriyama , Hiroshi Shimoda
IPC分类号： H01L21311
CPC分类号： C23C16/511 , C23C16/52 , C23C16/545 , H01J37/32192 , H01J37/32761 , H05H1/46 , H05H2001/4622
摘要： A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.

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