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41. 发明授权

US6099705A Physical vapor deposition device for forming a uniform metal layer on a semiconductor wafer 有权
标题翻译：用于在半导体晶片上形成均匀金属层的物理气相沉积装置
公开(公告)号：US6099705A
公开(公告)日：2000-08-08
申请号：US391323
申请日：1999-09-08
申请人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
发明人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
IPC分类号： C23C14/35 , C23C14/38 , C23C14/40 , C23C14/42 , C23C14/44
CPC分类号： C23C14/35
摘要： A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.
摘要翻译：物理气相沉积装置包括其中产生Ar离子的真空室，用于保持圆形半导体晶片的晶片卡盘，晶片上方的圆形金属靶，金属靶和晶片之间的环形金属线圈，以及由与金属靶相同的材料制成，以及用于向金属靶，晶片卡盘和金属线圈提供电压的电压控制器。在PVD处理期间，电压控制器在金属靶和晶片卡盘之间以及金属线圈和晶片卡盘之间产生电压偏压。这导致Ar离子轰击金属靶，释放金属原子溅射到晶片的中心部分，并导致Ar离子轰击金属线圈，以将金属原子溅射到晶片的周边部分，从而形成均匀的晶圆上的金属层。

42. 发明授权

US6093089A Apparatus for controlling uniformity of polished material 有权
标题翻译：用于控制抛光材料均匀性的装置
公开(公告)号：US6093089A
公开(公告)日：2000-07-25
申请号：US236522
申请日：1999-01-25
申请人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
发明人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
IPC分类号： B24B41/06 , B24B49/16 , B24B7/22
CPC分类号： B24B37/30 , B24B41/06 , B24B49/16
摘要： An apparatus for controlling a uniformity of a polished material is described. An air bag comprises a plurality of tubular rings. An air-bag manifold controller is connected to the tubular rings. The air-bag manifold controller controls inflation and deflation of the tubular rings in order to draw up the polished material and control pressure difference between different areas of the polished material.
摘要翻译：描述了一种用于控制抛光材料的均匀性的装置。气囊包括多个管状环。气囊歧管控制器连接到管状环。气囊歧管控制器控制管状环的膨胀和放气，以便画出抛光的材料并控制抛光材料的不同区域之间的压力差。

43. 发明授权

US6015755A Method of fabricating a trench isolation structure using a reverse mask 有权
标题翻译：使用反向掩模制造沟槽隔离结构的方法
公开(公告)号：US6015755A
公开(公告)日：2000-01-18
申请号：US162576
申请日：1998-09-29
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/762 , H01L21/00
CPC分类号： H01L21/76229
摘要： A method for fabricating trench isolation structures using the reverse mask is described. The method of using a reverse mask to fabricate trench isolation structures includes providing a semiconductor substrate having a first trench and a second trench in the substrate. The first trench has a width smaller than a fixed value, while the second trench has a width larger than the fixed value, the fixed value being, for example, about 0.7 .mu.m. Thereafter, a conformal insulating layer is formed over the first trench and the second trench. Next, a reverse mask layer is formed over the conformal insulating layer, and then the reverse mask layer is patterned. The reverse mask layer is patterned selectively. For example, only the region directly above the second trench is covered by the reverse mask. The region directly above the first trench is exposed. Subsequently, using the patterned reverse mask layer as a mask, a portion of the conformal insulating layer is etched away forming a residual conformal insulating layer underneath the reverse mask layer. Thereafter, the reverse mask layer is removed exposing protruding insulating structures. Finally, the regions of the conformal insulating layer protruding above the semiconductor substrate are polished.
摘要翻译：描述了使用反向掩模制造沟槽隔离结构的方法。使用反向掩模制造沟槽隔离结构的方法包括提供在衬底中具有第一沟槽和第二沟槽的半导体衬底。第一沟槽具有小于固定值的宽度，而第二沟槽的宽度大于固定值，固定值例如为约0.7μm。此后，在第一沟槽和第二沟槽之上形成保形绝缘层。接下来，在保形绝缘层上形成反向掩模层，然后对反向掩模层进行图案化。反向掩模层被选择性地图案化。例如，只有第二沟槽正上方的区域被反掩模覆盖。暴露第一沟槽正上方的区域。随后，使用图案化反向掩模层作为掩模，保护绝缘层的一部分被蚀刻掉，在反掩膜层下面形成残留的保形绝缘层。此后，去除暴露的绝缘结构的反面掩模层。最后，抛光在半导体衬底上突出的保形绝缘层的区域。

44. 发明授权

US5958795A Chemical-mechanical polishing for shallow trench isolation 失效
标题翻译：化学机械抛光用于浅沟槽隔离
公开(公告)号：US5958795A
公开(公告)日：1999-09-28
申请号：US75597
申请日：1998-05-11
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/3105 , H01L21/762 , H01L21/463
CPC分类号： H01L21/31053 , H01L21/76229
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation. A substrate having a plurality of active regions, including a large active region and a small active region, is provided. A silicon nitride layer is formed on the substrate. A shallow trench is formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trench is filled therewith. A partial reverse active mask is formed on the oxide layer, so that the oxide layer on a central part of the large active region is exposed. Whereas, the oxide layer on an edge part of the large active region and on the small active region are covered by the partial reverse active mask. The oxide layer is etched with the silicon nitride layer as a stop layer, using the partial reverse active mask as a mask. The oxide layer is planarized until the oxide layer within the shallow trench has a same level as the silicon nitride layer.
摘要翻译：用于形成浅沟槽隔离的化学机械抛光方法。提供具有多个有源区的基板，其包括大的有源区和小的有源区。在衬底上形成氮化硅层。在活性区域之间形成浅沟槽。在衬底上形成氧化物层，以便填充浅沟槽。在氧化物层上形成部分反向有源掩模，使大面积活性区域的中央部分的氧化物层露出。而大的有源区域的边缘部分和小的有源区域上的氧化物层被部分反向有源掩模覆盖。使用部分反向活性掩模作为掩模，用氮化硅层作为停止层蚀刻氧化物层。氧化层被平坦化，直到浅沟槽内的氧化物层具有与氮化硅层相同的水平。

45. 发明授权

US06280079B1 Method of mixing slurries 有权
标题翻译：混合浆料的方法
公开(公告)号：US06280079B1
公开(公告)日：2001-08-28
申请号：US09220535
申请日：1998-12-24
申请人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Peng-Yih Peng , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F500
CPC分类号： B24B37/04 , B01F7/00916 , B24B57/02
摘要： A slurry mixing apparatus has a mixing chamber, a rotatable bearing and several blades. The bearing is connected to one end of each of the blades and located in the center of the mixing chamber. Several kinds of the slurries can be mixed rapidly in the apparatus and flowed into the CMP polisher immediately to perform a CMP process. Being mixed by the mixing chamber, the slurry is supplied to the chemical mechanical polisher for polishing.
摘要翻译：浆料混合装置具有混合室，可旋转轴承和多个叶片。轴承连接到每个叶片的一端并且位于混合室的中心。几种浆料可以在设备中快速混合，并立即流入CMP抛光机，以执行CMP工艺。通过混合室混合，将浆料供给到化学机械抛光机进行抛光。

46. 发明授权

US06077147A Chemical-mechanical polishing station with end-point monitoring device 失效
标题翻译：化学机械抛光站带端点监控装置
公开(公告)号：US06077147A
公开(公告)日：2000-06-20
申请号：US336552
申请日：1999-06-19
申请人： Ming-Sheng Yang , Hsueh-Chung Chen , Tsang-Jung Lin , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Hsueh-Chung Chen , Tsang-Jung Lin , Juan-Yuan Wu
IPC分类号： B24B37/013 , B24B49/02 , B24B49/12 , B24B7/22
CPC分类号： B24B37/013 , B24B49/02 , B24B49/12
摘要： A chemical-mechanical polishing station for polishing wafers. The polishing station comprises a slurry supplier, a polishing pad capable of collecting the slurry, and a polishing head capable of rotating a wafer and lowering the wafer onto the polishing pad in contact with the polishing pad and the slurry during a polishing session. The polishing head further includes a retaining ring for positioning the wafer. The retaining ring houses a light-emitting device capable of shining a beam of light onto the slurry and a light sensor for picking up the beam of light reflected back from the slurry. The exact polishing end-point can be decided by analyzing signals obtained from the light sensor.
摘要翻译：用于抛光晶片的化学机械抛光站。抛光台包括浆料供应商，能够收集浆料的抛光垫，以及能够旋转晶片并且在抛光期间将晶片降低到与抛光垫和浆料接触的抛光垫上的抛光头。抛光头还包括用于定位晶片的保持环。保持环容纳能够将光束照射到浆料上的发光装置和用于拾取从浆料反射回来的光束的光传感器。可以通过分析从光传感器获得的信号来确定精确的抛光终点。

47. 发明授权

US6155912A Cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing process 有权
标题翻译：用于清洁化学机械抛光工艺中使用的抛光垫的清洁溶液
公开(公告)号：US6155912A
公开(公告)日：2000-12-05
申请号：US399089
申请日：1999-09-20
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： C11D3/39 , C11D7/06 , C11D7/20 , C11D11/00 , B24B1/00
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/06 , C11D7/20
摘要： The present invention provides a cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing (CMP) process for polishing the surface of a semiconductor wafer. The cleaning solution comprises a potassium hydroxide (KOH) solution for cleaning off slurry remaining on the surface of the polishing pad, and a hydrogen peroxide (H.sub.2 O.sub.2) solution and ammonia water (NH.sub.4 OH) solution for removing abrasive debris remaining on the surface of the polishing pad after the chemical-mechanical polishing process.
摘要翻译：本发明提供一种用于清洗用于抛光半导体晶片的表面的化学机械抛光（CMP）工艺中使用的抛光垫的清洗溶液。清洁溶液包括用于清除残留在抛光垫表面上的浆料的氢氧化钾（KOH）溶液和用于除去残留在抛光表面上的磨料残渣的过氧化氢（H 2 O 2）溶液和氨水（NH 4 OH）溶液化学机械抛光后的垫。

48. 发明授权

US6062964A Chemical mechanical polishing apparatus for controlling slurry distribution 有权
标题翻译：化学机械抛光装置，用于控制浆料分布
公开(公告)号：US6062964A
公开(公告)日：2000-05-16
申请号：US393909
申请日：1999-09-10
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： B24B37/11 , B24B57/02 , B24B57/00
CPC分类号： B24B37/11 , B24B57/02
摘要： A chemical mechanical polishing apparatus for controlling slurry distribution is disclosed. The slurry flowing through the mesh before transferring to the polishing pad, the mesh being used to distribute the slurry onto surface of the polishing pad. There are different netting densities over the mesh, achieving the purpose of controlling slurry distribution.
摘要翻译：公开了一种用于控制浆料分布的化学机械抛光装置。在转移到抛光垫之前，浆料流过网状物，该网用于将浆料分配到抛光垫的表面上。在网上有不同的网状密度，达到控制浆料分布的目的。

49. 发明授权

US6036356A In-situ slurry mixing apparatus 失效
标题翻译：原位浆料混合装置
公开(公告)号：US6036356A
公开(公告)日：2000-03-14
申请号：US220147
申请日：1998-12-23
申请人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F5/06 , B24B37/04 , B24B57/02 , H01L21/306 , B01F5/00
CPC分类号： B24B37/04 , B01F5/061 , B01F5/0646 , B24B57/02 , H01L21/30625
摘要： An in-situ CMP slurry mixing apparatus. The apparatus comprises a tubular main body and a plurality of tapered plugs. The tubular main body further comprises a plurality of first tubes with a first diameter, a plurality of second tubes with a second diameter. Each tapered plug is placed in each second tube, the tips of each tapered plug are pointed in the same direction, and the tips are each oriented opposite to a flowing direction of a CMP slurry. In addition, the second diameter is larger than the first diameter, and a diameter of the base of each tapered plug is larger than the first diameter but is smaller than the second diameter.
摘要翻译：原位CMP浆料混合装置。该装置包括管状主体和多个锥形塞。管状主体还包括具有第一直径的多个第一管，具有第二直径的多个第二管。每个锥形塞被放置在每个第二管中，每个锥形塞的尖端指向相同的方向，并且尖端各自定向成与CMP浆料的流动方向相反。此外，第二直径大于第一直径，并且每个锥形塞的基部的直径大于第一直径但小于第二直径。

50. 发明授权

US06255023B1 Method of manufacturing binary phase shift mask 有权
标题翻译：制造二元相移掩模的方法
公开(公告)号：US06255023B1
公开(公告)日：2001-07-03
申请号：US09434046
申请日：1999-11-04
申请人： Chien-Chao Huang , Michael W C Huang , Juan-Yuan Wu
发明人： Chien-Chao Huang , Michael W C Huang , Juan-Yuan Wu
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A method of manufacturing a binary phase shift photomask. A phase shift layer and a mask layer are sequentially formed over a transparent substrate. The mask layer and the phase shift layer are patterned to form a plurality of first openings and a plurality of second openings that expose a portion of the transparent substrate. The mask layer is patterned to form a layer of mask material around the edges of the first openings. All first openings occupy an area greater than a preset minimum area while all second openings occupy an area greater than the preset minimum area. The mask layer only surrounds the first openings while the phase shift layer surrounds both the first and the second openings.
摘要翻译：一种制造二进制相移光掩模的方法。在透明基板上依次形成相移层和掩模层。图案化掩模层和相移层以形成多个第一开口和暴露透明基板的一部分的多个第二开口。图案化掩模层以在第一开口的边缘周围形成掩模材料层。所有第一开口占据大于预设最小面积的区域，而所有第二开口占据大于预设最小面积的区域。掩模层仅围绕第一开口，而相移层围绕第一和第二开口。

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