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41. 发明授权

US08490573B2 Method and apparatus for material deposition 有权
标题翻译：材料沉积的方法和装置
公开(公告)号：US08490573B2
公开(公告)日：2013-07-23
申请号：US12968114
申请日：2010-12-14
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： B05C3/02 , B05D1/18
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

42. 发明申请

US20100170803A1 Method and Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US20100170803A1
公开(公告)日：2010-07-08
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

43. 发明授权

US07704367B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US07704367B2
公开(公告)日：2010-04-27
申请号：US10879263
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12 , H01L21/288 , B23H7/26 , C25B11/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

44. 发明申请

US20090242413A1 Electroplating Head and Method for Operating the Same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US20090242413A1
公开(公告)日：2009-10-01
申请号：US12482171
申请日：2009-06-10
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D21/10 , C25D3/02
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.
摘要翻译：电镀头设置在晶片的上表面上方并靠近晶片的上表面。阳离子从阳极转移到电镀头内的电镀溶液中。电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。通过电镀溶液在晶片的阳极和上表面之间建立电流。通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。电流导致阳离子被吸引到晶片的上表面。

45. 发明授权

US07368017B2 Method and apparatus for semiconductor wafer planarization 有权
标题翻译：用于半导体晶片平面化的方法和装置
公开(公告)号：US07368017B2
公开(公告)日：2008-05-06
申请号：US10734704
申请日：2003-12-12
申请人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
发明人： Fred C. Redeker , John Boyd , Yezdi Dordi , William Thie , Bob Maraschin
IPC分类号： B05C3/02
CPC分类号： H01L21/7684 , C23C18/06 , C23C18/1216 , C23C18/1225 , C23C18/1291 , C23C18/14 , H01L21/288
摘要： Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.
摘要翻译：广义而言，本发明提供了一种用于平面化半导体晶片（“晶片”）的方法和装置。更具体地，本发明提供了在晶片上沉积平坦化层，其中平坦化层用于填充存在于晶片表面上的凹陷区域。平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。温度升高又会导致电镀反应发生在晶片表面。通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。

46. 发明授权

US06864181B2 Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition 失效
标题翻译：使用无电沉积膜形成平坦化Cu互连层的方法和装置
公开(公告)号：US06864181B2
公开(公告)日：2005-03-08
申请号：US10402600
申请日：2003-03-27
申请人： Fred C. Redeker , John Boyd
发明人： Fred C. Redeker , John Boyd
IPC分类号： H01L21/288 , H01L21/768 , H01L21/311 , C03C15/00 , H01L23/48
CPC分类号： H01L21/288 , H01L21/7684
摘要： A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.
摘要翻译：在包括窄和宽的特征的衬底上形成平坦化的导电材料。导电材料通过一系列沉积工艺形成。第一沉积工艺形成导电材料的第一层，其填充窄特征并且至少部分地填充宽的特征。第二沉积工艺在第一层的空腔内形成导电材料的第二层。柔性材料可以减小衬底之上的第一层的厚度，同时将溶液递送到空腔以在其中形成第二层。柔性材料可以是连接到填充有溶液的可加压储存器的多孔膜。柔性材料也可以是用溶液润湿的多孔体材料。

47. 发明授权

US07875554B2 Method for electroless depositing a material on a surface of a wafer 有权
标题翻译：在晶片的表面上无电沉积材料的方法
公开(公告)号：US07875554B2
公开(公告)日：2011-01-25
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

48. 发明授权

US07358186B2 Method and apparatus for material deposition in semiconductor fabrication 有权
标题翻译：在半导体制造中材料沉积的方法和装置
公开(公告)号：US07358186B2
公开(公告)日：2008-04-15
申请号：US10735216
申请日：2003-12-12
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , B05C5/12
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

49. 发明授权

US08419917B2 Electroplating head and method for operating the same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US08419917B2
公开(公告)日：2013-04-16
申请号：US12482171
申请日：2009-06-10
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D5/20 , C25D5/02 , C25D5/00
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.
摘要翻译：电镀头设置在晶片的上表面上方并靠近晶片的上表面。阳离子从阳极转移到电镀头内的电镀溶液中。电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。通过电镀溶液在晶片的阳极和上表面之间建立电流。通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。电流导致阳离子被吸引到晶片的上表面。

50. 发明申请

US20080153291A1 Method and Apparatus for Material Deposition 有权
标题翻译：材料沉积方法和装置
公开(公告)号：US20080153291A1
公开(公告)日：2008-06-26
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

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