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    • 46. 发明授权
    • Adjustable dual frequency voltage dividing plasma reactor
    • 可调双频分压等离子体反应堆
    • US06706138B2
    • 2004-03-16
    • US09931324
    • 2001-08-16
    • Michael S. BarnesJohn HollandAlexander PatersonValentin TodorovFarhad Moghadam
    • Michael S. BarnesJohn HollandAlexander PatersonValentin TodorovFarhad Moghadam
    • H01L21306
    • H01J37/3244H01J37/32082
    • Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.
    • 提供了用于处理基板的设备和方法。 用于处理衬底的设备包括:具有第一电极的腔室; 设置在所述室中并提供第二电极的衬底支撑件; 电连接到第一或第二电极的高频电源; 电连接到第一或第二电极的低频电源; 和连接到一个或多个电极的可变阻抗元件。 可调谐可变阻抗元件以控制第一电极和第二电极之间的自偏压分压。 本发明的实施例大大减少电极的侵蚀,保持工艺均匀性,提高用于形成高纵横比亚微米互连特征的蚀刻工艺的精度,并提供增加的蚀刻速率,从而减少集成电路的生产时间和成本 。
    • 48. 发明授权
    • Vacuum plasma processor having coil with small magnetic field in its
center
    • 真空等离子体处理器在其中心具有小磁场的线圈
    • US5975013A
    • 1999-11-02
    • US978868
    • 1997-11-28
    • John Patrick HollandMichael S. Barnes
    • John Patrick HollandMichael S. Barnes
    • H01J37/32H05H1/00
    • H01J37/321
    • A substantially planar coil of a vacuum plasma processor has plural turns for exciting gas in the processor to a plasma state in response to r.f. coil energization. The coil is located outside the processor and surrounded by a shield tending to cause magnetic flux coupled from peripheral portions of the coil to the gas to be less than magnetic flux coupled from interior portions of the coil to the gas. The coil is arranged so magnetic flux derived from a center portion of an area circumscribed by the coil is less than the magnetic flux derived from all other areas circumscribed by the coil. The magnetic flux is such that the density of the plasma in the processor on a processed substrate is relatively uniform even though the coil exhibits transmission line properties so there are substantial peak-to-peak current variations along the length of the coil.
    • 真空等离子体处理器的基本上平面的线圈具有多个匝数,用于响应于r.f而将处理器中的气体激发到等离子体状态。 线圈通电。 线圈位于处理器外部并且被屏蔽物包围,从而导致从线圈的周边部分耦合到气体的磁通量小于从线圈的内部部分耦合到气体的磁通量。 线圈被布置成从由线圈外接的区域的中心部分导出的磁通小于由线圈外接的所有其它区域导出的磁通量。 磁通量使得处理的衬底上的处理器中的等离子体的密度相对均匀,即使线圈表现出传输线特性,因此沿着线圈的长度存在实质的峰 - 峰电流变化。