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41. 发明授权

US06518605B1 Solid state imaging pickup device and method for manufacturing the same 失效
标题翻译：固态成像拾取装置及其制造方法
公开(公告)号：US06518605B1
公开(公告)日：2003-02-11
申请号：US09770188
申请日：2001-01-29
申请人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
发明人： Keisuke Hatano , Masayuki Furumiya , Toru Kawasaki
IPC分类号： H01L29768
CPC分类号： H01L27/14603 , H01L27/14692
摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.
摘要翻译：一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域在最外周彼此相邻。围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

42. 发明授权

US06441853B1 Solid-state image sensor having vertical transfer electrodes protected from short circuiting 失效
标题翻译：具有垂直传输电极的固态图像传感器防止短路
公开(公告)号：US06441853B1
公开(公告)日：2002-08-27
申请号：US09102566
申请日：1998-06-23
申请人： Masayuki Furumiya
发明人： Masayuki Furumiya
IPC分类号： H04N5335
CPC分类号： H01L27/14843 , H01L27/14812
摘要： A CCD image sensor comprises an active area having an array of photodetectors, a vertical CCD, a horizontal CCD and an output section, and a field area wherein vertical transfer electrodes of the vertical CCD are connected to respective vertical bus lines. The vertical electrodes are implemented by three-layer firms for transferring the signal charge. The first electrode implemented by the first layer film protrudes from the second and third electrodes implemented by the second layer film in the field area. A short-circuit failure occurring between the second electrode and the third electrode along the side-wall of the first electrodes in the field area is prevented due to a large distance between the second electrode and the third electrode along the surface of the side-wall of the first electrode.
摘要翻译： CCD图像传感器包括具有光电检测器阵列的有源区域，垂直CCD，水平CCD和输出部分，以及垂直CCD的垂直传输电极连接到各个垂直总线的场区域。垂直电极由三层公司实现，用于传送信号电荷。由第一层膜实现的第一电极从场区域中由第二层膜实现的第二和第三电极突出。由于第二电极和第三电极之间沿着侧壁的表面的距离较大，所以防止在场区域中沿着第一电极的侧壁在第二电极和第三电极之间发生的短路故障的第一电极。

43. 发明授权

US06333525B1 Charge transfer apparatus and manufacture method thereof 失效
标题翻译：电荷转移装置及其制造方法
公开(公告)号：US06333525B1
公开(公告)日：2001-12-25
申请号：US09547228
申请日：2000-04-11
申请人： Masayuki Furumiya
发明人： Masayuki Furumiya
IPC分类号： H01L27148
CPC分类号： H01L27/14692 , H01L27/14806 , H01L27/14843
摘要： There is disclosed a charge transfer apparatus in which with respect to a signal charge detector, a gate insulation film under an output electrode and a reset electrode is formed of one layer of a silicon oxide film. As a result, even when the device is charged up during a manufacture process, the charge injection to the gate insulation film under the output electrode and reset electrode can be prevented. Therefore, the threshold value dispersion of the output electrode or the reset electrode is suppressed, and the charge transfer apparatus with uniform characteristics can be provided. Furthermore, by forming the silicon oxide film under the output electrode and reset electrode to be thick, the capacity formed of a floating diffusion layer and the parasitic capacity of the output electrode, and the capacity formed of the floating diffusion layer and the parasitic capacity of the reset electrode are reduced. Since the detection capacity formed of the floating diffusion layer is reduced, the charge/voltage conversion efficiency of the signal charge detector of the charge transfer apparatus, that is, a detection sensitivity can be increased.
摘要翻译：公开了一种电荷转移装置，其中相对于信号电荷检测器，输出电极下面的栅极绝缘膜和复位电极由一层氧化硅膜形成。结果，即使在制造过程中对器件进行充电，也可以防止对输出电极和复位电极之下的栅极绝缘膜的电荷注入。因此，抑制了输出电极或复位电极的阈值色散，能够提供具有均匀特性的电荷转移装置。此外，通过在输出电极和复位电极的下方形成氧化硅膜厚，由浮动扩散层形成的电容和输出电极的寄生电容以及由浮动扩散层形成的电容和寄生电容复位电极减少。由于浮动扩散层形成的检测能力降低，因此可以提高电荷转移装置的信号电荷检测器的充电/电压转换效率，即检测灵敏度。

44. 发明授权

US6097433A Solid state imaging apparatus having a plurality of metal wirings for supplying driving pulses to transfer electrodes of vertical CCD registers 失效
标题翻译：具有用于提供驱动脉冲以传送垂直CCD寄存器的电极的多个金属布线的固态成像装置
公开(公告)号：US6097433A
公开(公告)日：2000-08-01
申请号：US869442
申请日：1997-06-05
申请人： Shinichi Kawai , Michihiro Morimoto , Masayuki Furumiya , Chihiro Ogawa , Keisuke Hatano , Yasuaki Hokari , Takashi Sato , Nobuhiko Mutoh , Ichiro Murakami , Shinobu Suwazono , Hiroaki Utsumi , Kouichi Arai , Kozo Orihara , Nobukazu Teranishi , Takao Tamura
发明人： Shinichi Kawai , Michihiro Morimoto , Masayuki Furumiya , Chihiro Ogawa , Keisuke Hatano , Yasuaki Hokari , Takashi Sato , Nobuhiko Mutoh , Ichiro Murakami , Shinobu Suwazono , Hiroaki Utsumi , Kouichi Arai , Kozo Orihara , Nobukazu Teranishi , Takao Tamura
IPC分类号： H01L27/148 , H04N5/335 , H04N5/353 , H04N5/359 , H04N5/3722 , H04N5/3728 , H04N3/14
CPC分类号： H01L27/14812
摘要： Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.
摘要翻译：分流布线（12）以覆盖垂直CCD寄存器的导电遮光膜的形式，并且还用于供电，在垂直方向上投射到相邻的光电传感器（11）之间的位置，并且突出部分相邻的金属配线设定为0.2μm以下，并且限制在相邻的金属布线之间的电场为107V / cm以下的相邻的金属配线的距离，电路。

45. 发明授权

US5742081A Charge transfer image pickup device 失效
标题翻译：电荷转移图像拾取装置
公开(公告)号：US5742081A
公开(公告)日：1998-04-21
申请号：US383820
申请日：1995-02-06
申请人： Masayuki Furumiya
发明人： Masayuki Furumiya
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/3725 , H04N5/3728
CPC分类号： H01L27/14843 , H01L27/14806
摘要： A charge transfer image pickup device is disclosed. One embodiment of the device includes a plurality of photoelectric conversion elements for producing signal charges in response to light applied thereto. A vertical charge transfer part including a first region having a first well layer and for transferring the signal charges produced by the photoelectric conversion elements is provided. A horizontal charge transfer part including a second region having a second well layer and coupled to the vertical charge transfer part to receive transferred signal charges by using a terminal vertical transfer electrode of the vertical charge transfer part is also included. The first and second well layers partially overlap to form an overlap section that does not extend over the terminal vertical transfer electrode in the direction from the second region to the first region. A barrier layer is selectively formed in the first region such that the potential profile of the device descends gradually in the direction from the first region to the second region.
摘要翻译：公开了电荷转移图像拾取装置。该装置的一个实施例包括多个光电转换元件，用于响应于施加到其上的光而产生信号电荷。提供了包括具有第一阱层的第一区域和用于传送由光电转换元件产生的信号电荷的垂直电荷转移部件。还包括水平电荷转移部分，其包括具有第二阱层并且耦合到垂直电荷转移部分的第二区域，以通过使用垂直电荷转移部分的端子垂直转移电极来接收转移的信号电荷。第一和第二阱层部分地重叠以形成在从第二区域到第一区域的方向上不在端子垂直传输电极上延伸的重叠部分。在第一区域中选择性地形成阻挡层，使得器件的电位分布在从第一区域到第二区域的方向上逐渐下降。

46. 发明授权

US08481399B2 Method of manufacturing semiconductor device including capacitor element provided above wiring layer that includes wiring with an upper surface having protruding portion 失效
标题翻译：一种制造半导体器件的方法，包括设置在布线层上方的电容器元件，该布线层包括具有突出部分的上表面的布线
公开(公告)号：US08481399B2
公开(公告)日：2013-07-09
申请号：US13244438
申请日：2011-09-24
申请人： Masayuki Furumiya , Takeshi Toda
发明人： Masayuki Furumiya , Takeshi Toda
IPC分类号： H01L21/4763
CPC分类号： H01L28/40
摘要： A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, forming a wiring to be buried in the first insulating film, forming a protruding portion in an upper surface of the wiring, forming a second insulating film above the first insulating film and the wiring including the protruding portion, planarizing a surface of the second insulating film, forming a third insulating film on the second insulating film whose surface is planarized, forming a lower electrode on the third insulating film, forming a capacitor insulating film on the lower electrode, and forming an upper electrode on the capacitor insulating film.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘膜，形成要埋在第一绝缘膜中的布线，在布线的上表面形成突出部分，在第一绝缘膜上形成第二绝缘膜绝缘膜和包括突出部分的布线，平坦化第二绝缘膜的表面，在其表面平坦化的第二绝缘膜上形成第三绝缘膜，在第三绝缘膜上形成下电极，形成电容器绝缘膜下电极，并在电容器绝缘膜上形成上电极。

47. 发明授权

US08350357B2 Semiconductor device including an inductor that is inductively coupled to another inductor 有权
标题翻译：包括感应耦合到另一电感器的电感器的半导体器件
公开(公告)号：US08350357B2
公开(公告)日：2013-01-08
申请号：US12662441
申请日：2010-04-16
申请人： Masayuki Furumiya , Yasutaka Nakashiba
发明人： Masayuki Furumiya , Yasutaka Nakashiba
IPC分类号： H01F38/02 , H01F38/14 , G05F3/04 , H01L23/538 , H01L23/64
CPC分类号： H01F19/00 , H01L23/49575 , H01L23/5227 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49109 , H01L2224/49175 , H01L2924/00014 , H01L2924/12041 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A first inductor is connected to a transmission circuit. A second inductor is connected to a reception circuit, and is inductively coupled to the first inductor. At least part of the first inductor is formed with a first bonding wire. The first bonding wire has two ends connected to a first connecting terminal and a third connecting terminal. At least part of the second inductor is formed with a second bonding wire. The second bonding wire has two ends connected to a second connecting terminal and a fourth connecting terminal.
摘要翻译：第一电感器连接到传输电路。第二电感器连接到接收电路，并且感应耦合到第一电感器。第一电感器的至少一部分由第一接合线形成。第一接合线具有连接到第一连接端子和第三连接端子的两端。第二电感器的至少一部分由第二接合线形成。第二接合线具有连接到第二连接端子和第四连接端子的两端。

48. 发明申请

US20120015495A1 SEMICONDUCTOR DEVICE INCLUDING MIM ELEMENT AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：包含MIM元件的半导体器件及其制造方法
公开(公告)号：US20120015495A1
公开(公告)日：2012-01-19
申请号：US13244438
申请日：2011-09-24
申请人： Masayuki Furumiya , Takeshi Toda
发明人： Masayuki Furumiya , Takeshi Toda
IPC分类号： H01L21/02
CPC分类号： H01L28/40
摘要： A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, forming a wiring to be buried in the first insulating film, forming a protruding portion in an upper surface of the wiring, forming a second insulating film above the first insulating film and the wiring including the protruding portion, planarizing a surface of the second insulating film, forming a third insulating film on the second insulating film whose surface is planarized, forming a lower electrode on the third insulating film, forming a capacitor insulating film on the lower electrode, and forming an upper electrode on the capacitor insulating film.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘膜，形成要埋在第一绝缘膜中的布线，在布线的上表面形成突出部分，在第一绝缘膜上形成第二绝缘膜绝缘膜和包括突出部分的布线，平坦化第二绝缘膜的表面，在其表面平坦化的第二绝缘膜上形成第三绝缘膜，在第三绝缘膜上形成下电极，形成电容器绝缘膜下电极，并在电容器绝缘膜上形成上电极。

49. 发明授权

US08089165B2 Device comprising electrode pad 有权
标题翻译：装置包括电极垫
公开(公告)号：US08089165B2
公开(公告)日：2012-01-03
申请号：US12430557
申请日：2009-04-27
申请人： Taro Moriya , Yasutaka Nakashiba , Satoshi Uchiya , Masayuki Furumiya
发明人： Taro Moriya , Yasutaka Nakashiba , Satoshi Uchiya , Masayuki Furumiya
IPC分类号： H01L23/48
CPC分类号： H01L27/14636 , H01L24/05 , H01L27/14645 , H01L2224/0392 , H01L2224/05093 , H01L2224/05556 , H01L2224/05624 , H01L2224/8501 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01074 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A pad structure 100 includes an electrode pad (a first electrically conducting film 104 and a second electrically conducting film 110) and an insulating film provided over a peripheral region of the electrode pad so as to surround the electrode pad, and the insulating film has a structure including a protective film (a cover oxide film 106) and a transparent resin film (a transparent resin 108) provided on the cover oxide film 106.
摘要翻译：焊盘结构100包括电极焊盘（第一导电膜104和第二导电膜110）和设置在电极焊盘的周边区域上以围绕电极焊盘的绝缘膜，并且绝缘膜具有包括设置在覆盖氧化膜106上的保护膜（覆盖氧化物膜106）和透明树脂膜（透明树脂108）的结构。

50. 发明申请

US20100270642A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20100270642A1
公开(公告)日：2010-10-28
申请号：US12662441
申请日：2010-04-16
申请人： Masayuki Furumiya , Yasutaka Nakashiba
发明人： Masayuki Furumiya , Yasutaka Nakashiba
IPC分类号： H01L29/86 , H01F5/00
CPC分类号： H01F19/00 , H01L23/49575 , H01L23/5227 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49109 , H01L2224/49175 , H01L2924/00014 , H01L2924/12041 , H01L2924/181 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A first inductor is connected to a transmission circuit. A second inductor is connected to a reception circuit, and is inductively coupled to the first inductor. At least part of the first inductor is formed with a first bonding wire. The first bonding wire has two ends connected to a first connecting terminal and a third connecting terminal. At least part of the second inductor is formed with a second bonding wire. The second bonding wire has two ends connected to a second connecting terminal and a fourth connecting terminal.
摘要翻译：第一电感器连接到传输电路。第二电感器连接到接收电路，并且感应耦合到第一电感器。第一电感器的至少一部分由第一接合线形成。第一接合线具有连接到第一连接端子和第三连接端子的两端。第二电感器的至少一部分由第二接合线形成。第二接合线具有连接到第二连接端子和第四连接端子的两端。

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