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41. 发明授权

US07524998B2 Fabrication of self-assembled dendron monolayers 有权
标题翻译：自组装树枝状单层的制备
公开(公告)号：US07524998B2
公开(公告)日：2009-04-28
申请号：US11170057
申请日：2005-06-30
申请人： Hitoshi Fukushima , Satoshi Nebashi , Masaya Ishida , Wilhelm J S Huck , Andrew B Holmes , Christine K Luscombe
发明人： Hitoshi Fukushima , Satoshi Nebashi , Masaya Ishida , Wilhelm J S Huck , Andrew B Holmes , Christine K Luscombe
IPC分类号： C07C22/08 , C07C22/04 , C07C22/02 , C07C22/00 , B32B9/04 , B32B17/06 , B32B17/00
CPC分类号： C08G83/003 , B82Y30/00 , B82Y40/00 , C07C323/12 , Y10S977/754 , Y10T428/31504
摘要： A dendron (2) comprising a focal point (4) and a plurality of fluorinated end groups (9) is disclosed, including one having a thiol, a silane, a carboxylic acid, a phosphonate or another moiety at the focal point suitable for chemisorption to a substrate (3). A self-assembled monolayer comprising a plurality of dendrons bonded to a substrate and a device comprising the self-assembled monolayer are also disclosed.
摘要翻译：公开了包含焦点（4）和多个氟化端基（9）的树突（2），其包括在适于化学吸附的焦点上具有硫醇，硅烷，羧酸，膦酸酯或另一部分的树枝状体到基板（3）。还公开了一种包含多个结合到基底上的树突的自组装单层和包括该自组装单层的器件。

42. 发明申请

US20070201187A1 Electrochemical cell structure and method of fabrication 失效
标题翻译：电化学电池结构及制造方法
公开(公告)号：US20070201187A1
公开(公告)日：2007-08-30
申请号：US11598723
申请日：2006-11-14
申请人： Barry McGregor , Masaya Ishida
发明人： Barry McGregor , Masaya Ishida
IPC分类号： H01G9/00
CPC分类号： H01G9/2031 , B82Y20/00 , G02F1/1506 , G02F1/1533 , G02F2202/04 , G02F2202/36 , H01G9/2027 , H01G9/2059 , H01G9/2081 , H01L31/022425 , H01L31/022466 , H01L31/02366 , H01L51/0005 , Y02E10/542 , Y02P70/521 , Y10T29/49002
摘要： An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprising: a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent, and wherein the metal oxide layer is formed from a metal oxide particle dispersion liquid.
摘要翻译：提供电化学电池及其制造方法。所述电化学电池包括：第一导电层; 形成在所述第一导电层上的金属氧化物层，所述金属氧化物层包括彼此间隔开的多个相邻的金属氧化物电池; 形成在金属氧化物层上的功能染料层; 第二导电层; 以及所述功能性染料层与所述第二导电层之间的电解质，其中所述第一导电层和所述第二导电层中的至少一个是透明的，并且其中所述金属氧化物层由金属氧化物颗粒分散液形成。

43. 发明授权

US07253433B2 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus 有权
标题翻译：有机电致发光器件及其制造方法以及电子设备
公开(公告)号：US07253433B2
公开(公告)日：2007-08-07
申请号：US10002393
申请日：2001-11-02
申请人： Masaya Ishida , Masahiro Furusawa , Katsuyuki Morii , Osamu Yokoyama , Satoru Miyashita , Tatsuya Shimoda
发明人： Masaya Ishida , Masahiro Furusawa , Katsuyuki Morii , Osamu Yokoyama , Satoru Miyashita , Tatsuya Shimoda
IPC分类号： H01L29/08
CPC分类号： H01L27/3274 , H01L51/0512 , H01L51/0516
摘要： An organic electroluminescent device comprising: an organic thin-film transistor element including at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.
摘要翻译：一种有机电致发光器件，包括：有机薄膜晶体管元件，至少包括由有机材料制成的有源层; 以及由有机薄膜晶体管元件驱动的有机电致发光元件。

44. 发明申请

US20070122927A1 Electrochemical cell structure and method of fabrication 审中-公开
标题翻译：电化学电池结构及制造方法
公开(公告)号：US20070122927A1
公开(公告)日：2007-05-31
申请号：US11598775
申请日：2006-11-14
申请人： Shunpu Li , Masaya Ishida
发明人： Shunpu Li , Masaya Ishida
IPC分类号： H01L21/00
CPC分类号： H01G9/2031 , B82Y30/00 , H01G9/2068 , H01L51/0004 , Y02E10/542 , Y02P70/521
摘要： One limitation to the realisation of mass produced electrochemical cells is a lack of high resolution patterning techniques providing accurate-alignment. Accordingly a method of fabricating a patterned structure in the manufacture of an electrochemical cell comprising a soft-contact printing and ink-jet printing is provided.
摘要翻译：实现大规模生产的电化学电池的一个限制是缺乏提供精确对准的高分辨率图案化技术。因此，提供了在制造包括软接触印刷和喷墨印刷的电化学电池的制造中的图案化结构的方法。

45. 发明授权

US07182811B2 Semiconductor light emitting device and method for producing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07182811B2
公开(公告)日：2007-02-27
申请号：US10785554
申请日：2004-02-23
申请人： Masaya Ishida
发明人： Masaya Ishida
IPC分类号： C30B25/04
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/40 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0≦x, 0≦y, x+y
摘要翻译：一种半导体发光器件，包括：衬底; 设置在所述基板上并由氮化物半导体材料制成的n型层; 包括多个阱层的多量子阱结构有源层，每个阱层由In N x Ga（1-xy）Al Y y（0）＆lt; = x，0＆lt; = y，x + y＆lt; 1）和多个由In（a-a）a N（0 <= s，0 <= t，s + t <1），多量子阱结构有源层设置在n型层上; 以及设置在多量子阱结构有源层上并由氮化物半导体材料制成的p型层。 p型层含有氢，p型层的氢浓度大于或等于约1×10 16原子/ cm 3以上且小于或等于至约1×10 19原子/ cm 3。

46. 发明申请

US20060008678A1 Fabrication of self-assembled dendron monolayers 有权
公开(公告)号：US20060008678A1
公开(公告)日：2006-01-12
申请号：US11170057
申请日：2005-06-30
申请人： Hitoshi Fukushima , Satoshi Nebashi , Masaya Ishida , Wilhelm Huck , Andrew Holmes , Christine Luscombe
发明人： Hitoshi Fukushima , Satoshi Nebashi , Masaya Ishida , Wilhelm Huck , Andrew Holmes , Christine Luscombe
IPC分类号： B32B9/04 , B32B17/06
CPC分类号： C08G83/003 , B82Y30/00 , B82Y40/00 , C07C323/12 , Y10S977/754 , Y10T428/31504
摘要： A dendron (2) comprising a focal point (4) and a plurality of fluorinated end groups (9) is disclosed, including one having a thiol, a silane, a carboxylic acid, a phosphonate or another moiety at the focal point suitable for chemisorption to a substrate (3). A self-assembled monolayer comprising a plurality of dendrons bonded to a substrate and a device comprising the self-assembled monolayer are also disclosed.

47. 发明授权

US06927893B2 Electrophoretic device 失效
标题翻译：电泳装置
公开(公告)号：US06927893B2
公开(公告)日：2005-08-09
申请号：US10666720
申请日：2003-09-18
申请人： Hideyuki Kawai , Masaya Ishida
发明人： Hideyuki Kawai , Masaya Ishida
IPC分类号： G02F1/167 , G02B26/00 , G03G17/04 , H01B3/20 , G09B3/34
CPC分类号： B82Y30/00 , G02F1/167
摘要： In order to form an electrophoretic layer containing microcapsules at a desired region readily and accurately, a region having lyophobicity is formed on a member, and a microcapsule dispersion is then applied onto the member.
摘要翻译：为了容易且准确地在期望的区域形成含有微胶囊的电泳层，在构件上形成具有疏液性的区域，然后将微胶囊分散体施加到构件上。

48. 发明授权

US06518602B1 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US06518602B1
公开(公告)日：2003-02-11
申请号：US09653817
申请日：2000-09-01
申请人： Takayuki Yuasa , Masaya Ishida , Yuhzoh Tsuda , Mototaka Taneya
发明人： Takayuki Yuasa , Masaya Ishida , Yuhzoh Tsuda , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/325 , H01S5/0021 , H01S5/0206 , H01S5/0422 , H01S5/22 , H01S5/305 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： A nitride compound semiconductor light emitting device of the present invention includes: a nitride compound semiconductor substrate; and a light emitting device section including a nitride compound semiconductor provided on the nitride compound semiconductor substrate. The nitride compound semiconductor substrate contains a group VII element as an impurity.
摘要翻译：本发明的氮化物化合物半导体发光器件包括：氮化物化合物半导体衬底; 以及包括设置在氮化物化合物半导体衬底上的氮化物化合物半导体的发光器件部分。氮化物化合物半导体衬底含有作为杂质的VII族元素。

49. 发明授权

US06377598B1 Semiconductor light-emitting device and method for producing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06377598B1
公开(公告)日：2002-04-23
申请号：US09705230
申请日：2000-11-01
申请人： Masanori Watanabe , Masaya Ishida
发明人： Masanori Watanabe , Masaya Ishida
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01L33/145 , H01S5/2206 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/305 , H01S5/3054
摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
摘要翻译：发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

50. 发明授权

US5976688A Magneto-optical recording medium and method of manufacturing the same 失效
标题翻译：磁光记录介质及其制造方法
公开(公告)号：US5976688A
公开(公告)日：1999-11-02
申请号：US912282
申请日：1997-08-15
申请人： Takeo Kawase , Masaya Ishida , Satoshi Nebashi , Satoshi Shimokawato , Toshiaki Mikoshiba , Shoji Hoshina , Hiromu Miyazawa , Atsushi Takakuwa
发明人： Takeo Kawase , Masaya Ishida , Satoshi Nebashi , Satoshi Shimokawato , Toshiaki Mikoshiba , Shoji Hoshina , Hiromu Miyazawa , Atsushi Takakuwa
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10582 , G11B11/10584 , G11B11/10586 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： In a magneto-optical recording medium, a first dielectric layer 12, a recording layer 13, an auxiliary recording layer 14, a second dielectric layer 15 and a reflective layer 16 are sequentially laminated on a transparent substrate 11. Recording layer 14 is formed of a rare-earth transition-metal amorphous alloy having a film thickness of about several hundreds angstroms. Auxiliary recording layer 14 is also formed of a rare-earth transition-metal amorphous alloy. However, the Curie temperature T.sub.C2 of auxiliary recording layer 14 is 10.degree. K or more higher than the Curie temperature T.sub.C1 of recording layer 13, and the film thickness of auxiliary recording layer is ultra-thin, such as, 70 .ANG. or less. Further, the squareness ratio of auxiliary recording layer 14 at the Curie temperature T.sub.C1 of recording layer 13 is 0.7 or higher. These characteristics of auxiliary recording layer 14 may be realized by selecting the composition of auxiliary recording layer 14 or by lowering the density of the layer. In addition, a transition metal, such as, Fe or Co, or a non-magnetic metal, such as, Pt, Al, Ti or Cr, or a nitride of rare-earth transition-metal amorphous alloy may be employed as the material for auxiliary recording layer 14.
摘要翻译：在磁光记录介质中，第一电介质层12，记录层13，辅助记录层14，第二电介质层15和反射层16依次层压在透明基板11上。记录层14由具有约几百埃的薄膜厚度的稀土过渡金属非晶态合金。辅助记录层14也由稀土过渡金属非晶合金形成。然而，辅助记录层14的居里温度TC2比记录层13的居里温度TC1高10°K以上，辅助记录层的膜厚超薄，例如70以下。此外，记录层13的居里温度TC1下的辅助记录层14的矩形比为0.7以上。辅助记录层14的这些特性可以通过选择辅助记录层14的组成或通过降低层的密度来实现。此外，可以使用诸如Fe或Co的过渡金属或诸如Pt，Al，Ti或Cr的非磁性金属或稀土过渡金属非晶合金的氮化物作为材料用于辅助记录层14。

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