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41. 发明授权

US5821062A Oligonucleotide for use in checking presence or absence of mutation in human-derived cytochrome P450IIC18 gene 失效
标题翻译：用于检测人源性细胞色素P450IIC18基因中是否存在突变的寡核苷酸
公开(公告)号：US5821062A
公开(公告)日：1998-10-13
申请号：US716459
申请日：1996-11-05
申请人： Koichiro Komai , Hideo Kaneko , Iwao Nakatsuka
发明人： Koichiro Komai , Hideo Kaneko , Iwao Nakatsuka
IPC分类号： C12Q1/68 , C07H21/02 , C07H21/04 , C12P19/34
CPC分类号： C12Q1/6883 , C12Q2600/106
摘要： An oligonucleotide which can hybridize with a human-derived cytochrome P450IIC18 gene, one of the enzymes participating in the metabolic decomposition of medicines, has a GC content of 40-70%, and comprises 8 to 500 nucleotide units. The use of the oligonucleotide in the recognition or amplification of a DNA having the base sequence of this gene enables the presence or absence of mutation to be readily diagnosed and analyzed before the administration of a medicine. Thus it becomes possible to determine a safe dose of a medicine which has been difficult to use because of the occurrence of individual difference in drug-metabolizing ability and to use also a medicine which takes an active form by the action of this enzyme according to individuals.
摘要翻译： PCT No.PCT / JP95 / 00570 Sec。 371日期：1996年11月5日 102（e）日期1996年11月5日PCT 1995年3月28日PCT公布。出版物WO95 / 26415 日期1995年10月5日可与人源细胞色素P450IIC18基因（参与药物代谢分解的酶之一）杂交的寡核苷酸具有40-70％的GC含量，并且包含8至500个核苷酸单位。在识别或扩增具有该基因的碱基序列的DNA的情况下，使用寡核苷酸能够在施用药物之前容易地诊断和分析突变的存在或不存在。因此，可以确定由于药物代谢能力的个体差异的发生而难以使用的药物的安全剂量，并且还可以根据个体使用通过该酶的作用而具有活性形式的药物。

42. 发明授权

US5643650A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US5643650A
公开(公告)日：1997-07-01
申请号：US496256
申请日：1995-06-28
申请人： Yoshio Tawara , Katsushi Tokunaga , Hideo Kaneko , Yoshiaki Shimizu
发明人： Yoshio Tawara , Katsushi Tokunaga , Hideo Kaneko , Yoshiaki Shimizu
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10584 , G11B11/10586 , Y10S428/90
摘要： The recording sensitivity can be improved of a magneto-optical recording medium having a laminar structure consisting of a first dielectric layer, a recording layer, a second dielectric layer and reflecting layer successively formed on a transparent substrate plate by forming the reflecting layer from an alloy consisting of aluminum and from 0.05 to 3 atomic % of a rare earth element such as neodymium and gadolinium in place of pure aluminum as in conventional magneto-optical recording media.
摘要翻译：通过从合金形成反射层，可以提高具有由第一电介质层，记录层，第二电介质层和反射层组成的层状结构的磁光记录介质的记录灵敏度由铝和0.05〜3原子％的稀土元素如钕和钆代替纯铝如常规磁光记录介质。

43. 发明授权

US5521781A Substrate for magnetic recording medium 失效
标题翻译：磁记录介质基板
公开(公告)号：US5521781A
公开(公告)日：1996-05-28
申请号：US447056
申请日：1995-05-22
申请人： Hideo Kaneko , Yasuaki Nakazato , Toyofumi Aoki , Itsuo Kuroyanagi
发明人： Hideo Kaneko , Yasuaki Nakazato , Toyofumi Aoki , Itsuo Kuroyanagi
IPC分类号： G11B5/73 , G11B5/84 , G11B5/82 , H01L21/302
CPC分类号： G11B5/7315 , G11B5/8404
摘要： Proposed is a substrate of a magnetic recording medium in the form of an annular disk made from a single crystal of silicon which is imparted with greatly improved mechanical strengths to withstand mechanical shocks and high-velocity revolution. Different from conventional annular disks as formed by a mechanical working to form the outer contour and the circular center opening, the peripheral surfaces of the inventive annular disk are freed from the work-stressed surface layer by a chemical etching treatment undertaken after the mechanical working.
摘要翻译：提出了由单晶硅制成的环形盘形式的磁记录介质的衬底，其被赋予大大改进的机械强度以承受机械冲击和高速旋转。不同于通过机械加工形成外轮廓和圆形中心孔的常规环形盘，通过在机械加工之后进行的化学蚀刻处理，本发明的环形盘的周边表面与工作应力表面层脱离。

44. 发明授权

US4527616A Horizontal continuous casting installation 失效
标题翻译：水平连铸安装
公开(公告)号：US4527616A
公开(公告)日：1985-07-09
申请号：US390712
申请日：1982-06-21
申请人： Hideo Kaneko , Hatsuyoshi Kumashiro , Akira Iwata
发明人： Hideo Kaneko , Hatsuyoshi Kumashiro , Akira Iwata
IPC分类号： B22D11/10 , B22D11/04 , B22D11/047 , B22D27/02
CPC分类号： B22D11/10 , B22D11/047
摘要： A horizontal continuous casting installation, particularly for casting a strand of a large transverse dimension, wherein a body of molten metal stored in a tundish is continuously supplied through a tundish nozzle secured to the tundish in the vicinity of its bottom and extending horizontally therefrom to a mold connected to the forward end of the tundish nozzle and arranged coaxially therewith to cast a strand which is continuously withdrawn horizontally from the mold. The mold has an inner transverse dimension greater than the inner transverse dimension of the tundish nozzle. An electromagnetic field generating device is located between an outer surface of the tundish nozzle and an inner surface of the mold in the vicinity of an end surface of the mold facing the tundish nozzle for exerting an electromagnetic force on the body of molten metal flowing from the tundish nozzle to the mold in such a manner that the electromagnetic force is oriented toward the center of the body of molten metal.
摘要翻译：一种水平连续铸造装置，特别是用于铸造大横向尺寸的股线，其中储存在中间包中的熔融金属体通过固定在其底部附近的中间包并从其水平延伸到中间包的中间包喷嘴连续供应到模具连接到中间包喷嘴的前端并与其同轴布置，以铸造从模具水平地连续取出的股线。模具具有大于中间包喷嘴的内横向尺寸的内横向尺寸。电磁场产生装置位于中间包喷嘴的外表面和模具的内表面之间，在与中间包喷嘴相对的模具的端面附近，用于向从中间包喷嘴流动的熔融金属体上施加电磁力将中间包喷嘴浇注到模具中，使得电磁力朝向熔融金属体的中心。

45. 发明授权

US08980503B2 Binary photomask blank and binary photomask making method 有权
标题翻译：二元光掩模空白和二进制光掩模制作方法
公开(公告)号：US08980503B2
公开(公告)日：2015-03-17
申请号：US13196952
申请日：2011-08-03
申请人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
发明人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
IPC分类号： G03F1/50 , G03F1/76 , G03F1/00 , G03F1/58 , G03F1/32
CPC分类号： G03F1/14 , G03F1/32 , G03F1/50 , G03F1/58
摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm , and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
摘要翻译：二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧的组成梯度层的遮光膜，由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。

46. 发明授权

US08475978B2 Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film 有权
标题翻译：光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法
公开(公告)号：US08475978B2
公开(公告)日：2013-07-02
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
IPC分类号： G03F1/22 , G03F1/24
CPC分类号： G03F1/72 , G03F1/32 , G03F1/48 , G03F1/50
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译：光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

47. 发明申请

US20100248090A1 PHOTOMASK BLANK AND PHOTOMASK 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：US20100248090A1
公开(公告)日：2010-09-30
申请号：US12750044
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80
摘要： A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
摘要翻译：光掩模坯料包括透明基板，任选含过渡金属的硅材料的遮光膜和铬化合物基材的蚀刻掩模膜。蚀刻掩模膜由通过反应溅射沉积的不同组成的多层组成，多层组合包括当作为单一组合物层沉积在基板上时施加压缩应力的材料的第一层，第二层当作为单一组合物层沉积在基底上时施加拉伸应力的材料层。

48. 发明申请

US20100246932A1 METHOD FOR INSPECTING AND JUDGING PHOTOMASK BLANK OR INTERMEDIATE THEREOF 有权
标题翻译：用于检查和判断光电隔离层或其中间体的方法
公开(公告)号：US20100246932A1
公开(公告)日：2010-09-30
申请号：US12750023
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译：通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。

49. 发明申请

US20100176087A1 PHOTOMASK MAKING METHOD, PHOTOMASK BLANK AND DRY ETCHING METHOD 有权
标题翻译：光电制造方法，光电隔离和干蚀刻方法
公开(公告)号：US20100176087A1
公开(公告)日：2010-07-15
申请号：US12687539
申请日：2010-01-14
申请人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
发明人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
IPC分类号： B44C1/22 , G03F1/00
CPC分类号： G03F1/80 , G03F1/14 , G03F1/26 , G03F1/32
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/C1 ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译：通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / C1比对含有氧的氯气对所述坯料进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层，屏蔽膜。

50. 发明授权

US07632609B2 Fabrication method of photomask-blank 有权
标题翻译：光掩模坯料的制造方法
公开(公告)号：US07632609B2
公开(公告)日：2009-12-15
申请号：US11545451
申请日：2006-10-11
申请人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko , Yukio Inazuki
发明人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko , Yukio Inazuki
IPC分类号： G03F1/14
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译：具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。例如，不透明石英部分由“发泡石英”制成。此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内关于闪光照射等期间的照射光的能量的条件。堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。

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