会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明授权
    • Spin-valve type thin film element and its manufacturing method
    • 旋转阀型薄膜元件及其制造方法
    • US06178071B1
    • 2001-01-23
    • US09158447
    • 1998-09-22
    • Naoya HasegawaToshihiro Kuriyama
    • Naoya HasegawaToshihiro Kuriyama
    • G11B539
    • B82Y25/00B82Y10/00B82Y40/00G01R33/093G11B5/3903G11B2005/3996H01F10/3268H01F41/302
    • A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.
    • 自旋阀型薄膜元件包括反铁磁层,钉扎磁性层,自由磁性层,非磁性导电层,偏置层和导电层。 端部区域中的钉扎磁性层相对于轨道宽度的磁化方向在来自记录介质的泄漏磁场的方向上固定,并且中心区域中的被钉扎磁性层的磁化方向固定在 相对于来自记录介质的泄漏磁场的方向倾斜的方向。 一种自旋阀型薄膜元件的制造方法包括以下步骤:在温度T1下形成多层膜,进行磁性退火,将多层膜图案化成预定的形状,在 多层膜,对偏置层进行磁化,在温度T2下不施加磁场进行退火,以及使偏置层磁化。
    • 45. 发明授权
    • Solid-state imaging device and method for fabricating the same
    • 固态成像装置及其制造方法
    • US07791159B2
    • 2010-09-07
    • US12261357
    • 2008-10-30
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H01L29/78
    • H01L27/14636H01L27/14812H01L27/14831H01L2224/11
    • A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.
    • 一种固态成像装置,包括成像区域,形成在成像区域的外周部分的外围电路区域,具有成像区域和在其主表面上的外围电路区域的第一导电型半导体基板,第二导电性 形成在半导体衬底中的第一半导体层,形成在第一半导体层中的第一导电类型的第二半导体层,形成在贯穿半导体衬底的贯穿半导体衬底的贯通半导体衬底的厚度方向的通孔,以及形成 在半导体衬底上并连接到通孔。 通孔穿过半导体衬底的第一导电类型区域。
    • 46. 发明申请
    • SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR FABRICATING THE SAME
    • 固态图像感测装置及其制造方法
    • US20100020219A1
    • 2010-01-28
    • US12496102
    • 2009-07-01
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H04N5/335H01L31/18
    • H01L27/14812H01L27/14683
    • A solid-state image sensing device includes: a plurality of light receiving elements arranged in a matrix in a device formation region surrounded by a device isolation region of a semiconductor substrate; a plurality of vertical transfer sections for transferring charges of the light receiving elements in the column direction; and a horizontal transfer section for receiving the charges from the vertical transfer sections and for transferring the received charges in the row direction. The horizontal transfer section includes: a horizontal channel region; and a plurality of horizontal transfer electrodes extending over the horizontal channel region and the device isolation region and being spaced apart from each other. The distance between the horizontal transfer electrodes is larger at a boundary between the device formation region and the device isolation region than in the middle of the horizontal channel region.
    • 固态图像感测装置包括:多个光接收元件,其被布置在由半导体衬底的器件隔离区包围的器件形成区域中的矩阵中; 多个垂直传送部分,用于在列方向上传送光接收元件的电荷; 以及水平传送部分,用于从垂直传送部分接收电荷并用于在行方向传送接收的电荷。 水平传送部分包括:水平通道区域; 以及在水平沟道区域和器件隔离区域上延伸并且彼此间隔开的多个水平传输电极。 在水平传输电极之间的距离在器件形成区域和器件隔离区域之间的边界处比在水平沟道区域的中间更大。
    • 48. 发明授权
    • Solid-state imaging apparatus and manufacturing method thereof
    • 固态成像装置及其制造方法
    • US07422925B2
    • 2008-09-09
    • US10847442
    • 2004-05-18
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H01L21/00
    • H01L29/66946H01L27/14831
    • The present invention aims to provide a solid-state apparatus and a manufacturing method thereof, the solid-state apparatus having both high transfer efficiency in a horizontal transfer CCD and efficient breakdown voltage in a vertical transfer CCD and including a semiconductor substrate 110, first layer poly-silicon electrodes 120 and second layer poly-silicon electrodes 130 which form two layered overlap poly-silicon electrodes, an embedded channel region 140 which is formed in a surface unit of the semiconductor substrate 110 and becomes a transfer path for signal charge, and a photodiode region where photodiodes are aligned two-dimensionally, the photodiodes converting light into signal charge and accumulating the signal charge, wherein an inter-electrode distance c in the horizontal transfer CCD is shorter than an inter-electrode distance a in the vertical transfer CCD.
    • 本发明旨在提供一种固态设备及其制造方法,该固态设备在水平传送CCD中具有高传输效率和垂直传输CCD中的有效击穿电压,并且包括半导体衬底110,第一层 形成两层重叠多晶硅电极的多晶硅电极120和第二层多晶硅电极130,形成在半导体衬底110的表面单元中并成为用于信号电荷的传输路径的嵌入沟道区140,以及 光电二极管二维排列的光电二极管区域,光电二极管将光转换为信号电荷并累积信号电荷,其中水平转印CCD中的电极间距离c比垂直转印CCD中的电极间距离a短 。
    • 49. 发明申请
    • Solid-state imaging device and method for manufacturing the same
    • 固态成像装置及其制造方法
    • US20070090480A1
    • 2007-04-26
    • US11474654
    • 2006-06-26
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H01L31/00
    • H01L27/14812H01L29/768
    • The solid-state imaging device of the present invention includes: a plurality of photodetectors that are arranged in a two-dimensional matrix; a plurality of vertical transfer portions that transfer, in a vertical direction, signal electric charges which are read out from the respective photodetectors; a horizontal transfer portion that receives the signal electric charges transferred by the vertical transfer portions, and transfers the signal electric charges in a horizontal direction; a barrier region that is adjacent to the horizontal transfer portion, and allows an excess electric charge in the horizontal transfer portion to pass through; and a drain region that is adjacent to the barrier region and drains the excess electric charge which has passed through the barrier region; and bus lines that are disposed in parallel with the drain region, and apply control voltages to electrodes of the horizontal transfer portion. The bus lines and the electrodes of the horizontal transfer portion are connected via a connection pattern that is disposed between the bus lines and the drain region. A power loss in the horizontal transfer portion is suppressed, and both of an increase in the number of pixels and a decrease in power consumption are achieved.
    • 本发明的固态成像装置包括:以二维矩阵排列的多个光电探测器; 在垂直方向上传送从各个光电检测器读出的信号电荷的多个垂直传送部; 水平传送部分,其接收由垂直传送部分传送的信号电荷,并在水平方向上传送信号电荷; 与水平转印部相邻的阻挡区域,使水平转印部中的过量电荷通过; 以及与所述阻挡区域相邻并排出已经通过所述阻挡区域的多余电荷的漏极区域; 以及与漏极区域并联设置的总线,并向水平转印部分的电极施加控制电压。 总线线路和水平传送部分的电极经由布置在总线和漏极区域之间的连接图案连接。 抑制了水平传送部分的功率损耗,并且实现了像素数量的增加和功耗的降低。
    • 50. 发明授权
    • Charge detecting device
    • 充电检测装置
    • US07034347B2
    • 2006-04-25
    • US10793107
    • 2004-03-03
    • Toshihiro Kuriyama
    • Toshihiro Kuriyama
    • H01L31/062H01L31/113H01L31/06
    • H01L27/14609H01L27/14806
    • There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting device includes a charge accumulating portion including a low concentration N-type (N−) layer 108 formed in a P-type well 101 and a high concentration N-type (N+) layer formed between the N− layer and a principal surface. The N+ layer is connected to an input terminal of an amplifying transistor of an output circuit, and after a reverse bias is applied to the N+ layer during discharging of the accumulated charge, the entire N− layer is depleted at least until a saturated charge is accumulated.
    • 提供了一种电荷检测装置,其可以将累积电荷转换成低电压和高效率的电压,并且具有大的输出电压的动态范围和转换​​效率的令人满意的线性度。 电荷检测装置包括电荷累积部分,其包括形成在P型阱101中的低浓度N型(N)层108和形成在N层和主体之间的高浓度N型(N +)层 表面。 N +层连接到输出电路的放大晶体管的输入端,并且在累积电荷放电期间向N +层施加反向偏压之后,整个N层至少耗尽直到饱和电荷为 积累。