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    • 50. 发明授权
    • Simulation model creating method, mask data creating method and semiconductor device manufacturing method
    • 模拟模型创建方法,掩模数据创建方法和半导体器件制造方法
    • US08055366B2
    • 2011-11-08
    • US12406828
    • 2009-03-18
    • Shoji MimotogiMasafumi Asano
    • Shoji MimotogiMasafumi Asano
    • G06F19/00G06F17/50G06F1/00G06G7/48G06K9/00
    • G03F7/70641G03F1/36G03F1/68
    • A simulation model creating method computes, for measurement results of a line width of a resist pattern formed with varied an exposure amount and focus value, a permissible fluctuation range of the pattern line width from a distribution of the exposure amount and a distribution of the focus value; computes difference values between the measurement results and corresponding approximation values on a fitting function which has the exposure amount and focus value as parameters; compares the difference values with the permissible fluctuation range; deletes any measurement values for which the difference value is larger than the permissible fluctuation range, and recomputes the fitting function accordingly; and deletes measurement values outside a permissible fluctuation range of a pattern line width of the mask, and creates a simulation model.
    • 仿真模型创建方法针对由曝光量和聚焦值变化形成的抗蚀剂图案的线宽的测量结果,计算曝光量的分布和焦点分布的图案线宽度的容许波动范围 值; 在具有曝光量和聚焦值作为参数的拟合函数上计算测量结果与相应近似值之间的差值; 将差值与允许的波动范围进行比较; 删除差值大于允许波动范围的任何测量值,并相应地重新计算拟合功能; 并将测量值删除在掩模的图案线宽度的允许波动范围之外,并创建仿真模型。