会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明授权
    • Method for producing a TFA image sensor and one such TFA image sensor
    • 用于生产TFA图像传感器和一个这样的TFA图像传感器的方法
    • US07326589B2
    • 2008-02-05
    • US11271492
    • 2005-11-11
    • Peter RieveKonstantin SeibelJens PrimaMarkus ScholzTarek LuleStephan BenthienMichael SommerMichael Wagner
    • Peter RieveKonstantin SeibelJens PrimaMarkus ScholzTarek LuleStephan BenthienMichael SommerMichael Wagner
    • H01L21/00
    • H01L27/14643H01L27/14603H01L27/14609H01L31/02162H01L31/0376Y02E10/50
    • The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.
    • 本发明涉及一种制造TFA图像传感器的方法,其中包括光电二极管阵列的多层布置被布置在ASIC切换电路上,该ASIC开关电路设置有用于操作TFA图像传感器的电子电路,例如像素电子器件,外围电子器件和 系统电子器件,用于将电磁辐射像素地转换成强度依赖的光电流,像素连接到ASIC开关电路的底层像素电子器件的触点。 该方法能够在不损害光敏传感器表面的形貌的情况下使用常规生产的ASIC切换电路。 去除光致活性区域中的CMOS钝化层,然后去除上部CMOS金属化的CMOS钝化层,并由构成像素栅格的金属层代替以形成背面电极。 然后施加和构造光电二极管矩阵,所述光电二极管矩阵被实现为像素矩阵,其上可以应用具有钝化作用的钝化保护层和/或滤色器层。
    • 42. 发明申请
    • Portable survival shelter
    • 便携式生存庇护所
    • US20070251159A1
    • 2007-11-01
    • US11415615
    • 2006-05-01
    • Michael Wagner
    • Michael Wagner
    • E02D29/14
    • E04H9/145Y02A10/39Y02A50/14
    • A portable survival shelter that includes a body having a generally elongated shape and a protective outer shell structure, a sealable entrance on the top of the body, and a base upon which the body is formed. The body defines a sealable survival chamber that is large enough to hold one or more persons and strong enough to withstand the impact of falling tree limbs, flying debris, or the like. The shelter is preferably configured with ballast to float in water in an upright orientation and constructed with an exterior surface substantially free from protruding snags. The shelter is preferably of a size that fits within a conventional automobile garage, and preferably incorporates forklift pockets for moving the shelter from place to place with a forklift or recessed pad eyes for lifting the shelter with a crane or helicopter.
    • 一种便携式生存庇护器,其包括具有大致细长形状的身体和保护性外壳结构,身体顶部上的可密封入口以及形成身体的基部。 身体定义了一个可密封的生存室,其足够大以容纳一个或多个人,并且足够坚固以承受落下的树枝,飞行碎片等的影响。 遮蔽物优选地配置有压载物以垂直取向漂浮在水中,并且构造成具有基本上没有突出的障碍物的外表面。 避难所优选地具有适合于常规汽车车库的尺寸,并且优选地包括叉车口袋,用于使用起重机或直升机用叉车或凹进的垫眼移动避难所从一个地方到另一个地方。
    • 43. 发明授权
    • Method for producing a photodiode contact for a TFA image sensor
    • 制造用于TFA图像传感器的光电二极管接触的方法
    • US07282382B2
    • 2007-10-16
    • US11088249
    • 2005-03-23
    • Peter RieveKonstantin SeibelMichael Wagner
    • Peter RieveKonstantin SeibelMichael Wagner
    • H01L21/00
    • H01L27/14689H01L27/14636H01L27/14692
    • The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermediate metal dielectric component and that has vias in a photoactive zone which are arranged on a pixel grid. Said vias extend through the intermediate metal dielectric component and are linked with respective strip conductors of the CMOS-ASIC circuit. A pixel-grid structured barrier layer, and on top thereof a CMOS metallization, are arranged on the intermediate metal dielectric component. The aim of the invention is to improve the characteristic variables of the photodiode by simple technological means. This object is achieved by removing at least the CMOS metallization present on the CMOS-ASIC circuit in the area of the photoactive zone except for the structured barrier layer and subsequently applying the multilayer system of the photodiode and the conductive transparent contact layer to the CMOS-ASIC circuit.
    • 本发明涉及一种用于制造用于TFA图像传感器的光电二极管接触的方法,其包括通过在已经涂覆有中间金属介电部件的ASIC电路上沉积多层系统和透明导电接触层而产生的光电二极管,并且 在光栅区中具有布置在像素网格上的通孔。 所述通孔延伸穿过中间金属电介质部件并与CMOS-ASIC电路的相应带状导体连接。 在中间金属电介质部件上布置有像素网格结构的势垒层,并且在其上方具有CMOS金属化。 本发明的目的是通过简单的技术手段改善光电二极管的特征变量。 该目的通过在除了结构化阻挡层之外的光活性区域中至少除去存在于CMOS-ASIC电路上的CMOS金属化,并且随后将光电二极管和导电透明接触层的多层系统施加到CMOS- ASIC电路。
    • 44. 发明授权
    • Device and method for synchronizing a flasher frequency with a central flashing frequency
    • 闪光器频率与中央闪烁频率同步的装置和方法
    • US07230526B2
    • 2007-06-12
    • US11126060
    • 2005-05-09
    • Michael Wagner
    • Michael Wagner
    • B60Q1/52
    • B60Q1/46H05B37/029H05B41/30Y02B20/40
    • A device performs a synchronization between flasher frequencies of flasher devices and a central flashing frequency of a central control device at times when a data transmission device is in the active state. For a synchronization, a correction signal is determined in the central control device from a deviation of a phase of the flasher frequency relative to a phase of the central flashing frequency and transmitted to a flasher control device which modifies the flasher frequency phase in response to the correction signal. Following the modification of the flasher frequency phase the data transmission device is switched back once more into an idle state. This offers the advantage that a synchronization of flasher devices with a central control device can be performed, whereby a data transmission device does not need to be permanently active and can therefore be used in a power-saving way.
    • 当数据传输设备处于活动状态时,设备执行闪光器设备的闪光器频率和中央控制设备的中央闪烁频率之间的同步。 为了同步,在中央控制装置中根据闪光器频率相对于中心闪烁频率的相位的偏差来确定校正信号,并且发送到闪光器控制装置,该闪光器控制装置响应于闪光器频率相位 校正信号。 在修改闪光器频率相位之后,数据传输装置再次切换回到空闲状态。 这提供了可以执行闪光器装置与中央控制装置的同步的优点,由此数据传输装置不需要永久地活动,因此可以以省电的方式使用。
    • 48. 发明授权
    • Method for fabricating an integrated semiconductor circuit
    • 用于制造集成半导体电路的方法
    • US06868530B2
    • 2005-03-15
    • US10310397
    • 2002-12-05
    • Michael WagnerKlaus Keiner
    • Michael WagnerKlaus Keiner
    • G06F17/50H01L27/118
    • H01L27/118G06F17/5068
    • A method for fabricating a semiconductor circuit uses a computer program to compute a circuit diagram that is made up of a large number of surface cells, each having a uniform height. Space-saving layouts require a uniform cell height for all the surface cells. The height is conventionally prescribed by a computer file containing standardized dimensions for a large number of surface cells. Accordingly, such surface cells as are required for a specific semiconductor circuit that is to be fabricated are selected, and the selection is used to compute a circuit-specific uniform cell height. The height is less than the height prescribed by the computer file and results in surface area being saved on the semiconductor chip.
    • 一种制造半导体电路的方法使用计算机程序来计算由大量具有均匀高度的表面单元组成的电路图。 节省空间的布局需要所有表面单元均匀的单元格高度。 通常由包含大量表面细胞的标准尺寸的计算机文件来规定高度。 因此,选择要制造的特定半导体电路所需的这种表面电池,并且使用该选择来计算电路特定的均匀电池单元高度。 高度小于计算机文件规定的高度,并导致半导体芯片上的表面积被保存。