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    • 41. 发明申请
    • METHOD OF FORMING SEMICONDUCTOR STRUCTURES WITH CONTACT HOLES
    • 形成具有接触角的半导体结构的方法
    • US20120028476A1
    • 2012-02-02
    • US12846020
    • 2010-07-29
    • Wai-Kin LiWu-Song HuangJoy ChengKuang-Jung Chen
    • Wai-Kin LiWu-Song HuangJoy ChengKuang-Jung Chen
    • H01L21/312
    • H01L21/0337H01L21/0338
    • Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
    • 本发明的实施例提供一种形成半导体结构的方法。 该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。 在一个实施例中,形状是环,并且形成一组形状包括形成均匀且平直间隔的一组环。 在另一个实施方案中,使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块,并且在每四(4)个正方形相邻的环周围仅形成一个圆柱形块。
    • 42. 发明申请
    • PACKAGE OF ENVIRONMENTAL SENSITIVE ELEMENT AND ENCAPSULATION METHOD OF THE SAME
    • 环境敏感元件的包装及其封装方法
    • US20120024722A1
    • 2012-02-02
    • US12944691
    • 2010-11-11
    • Kuang-Jung Chen
    • Kuang-Jung Chen
    • B65D81/26B05D5/12
    • H01L21/56H01L23/26H01L2924/0002H01L2924/12044H01L2924/00
    • An encapsulation method of an environmental sensitive element is provided. An environmental sensitive element and a first rib are formed on a first substrate. The first rib surrounds the environmentally sensitive element. A getter layer is formed on the environmental sensitive element. A first encapsulation layer is formed to encapsulate the getter layer and the first rib. The first barrier layer is formed to encapsulate the first encapsulation layer located on the first rib. The first rib, a portion of the first encapsulation layer located on the first rib and the first barrier layer form a barrier structure. A second substrate is provided on the first substrate and a filling layer is formed between the first substrate and the second substrate. The second substrate is bonded to the first substrate by the filling layer. The filling layer encapsulates the environmental sensitive element, the first encapsulation layer and the barrier structure.
    • 提供了一种环境敏感元件的封装方法。 在第一基板上形成环境敏感元件和第一肋条。 第一个肋围绕环境敏感元件。 在环境敏感元件上形成吸气剂层。 形成第一封装层以封装吸气剂层和第一肋。 形成第一阻挡层以封装位于第一肋上的第一封装层。 第一肋,位于第一肋上的第一包封层的一部分和第一阻挡层形成阻挡结构。 在第一基板上设置第二基板,在第一基板和第二基板之间形成填充层。 第二基板通过填充层与第一基板结合。 填充层封装环境敏感元件,第一封装层和屏障结构。
    • 44. 发明申请
    • TOUCH-SENSING DISPLAY APPARATUS AND FABRICATING METHOD THEREOF
    • 触摸感应显示装置及其制作方法
    • US20100265207A1
    • 2010-10-21
    • US12703163
    • 2010-02-09
    • Kuang-Jung Chen
    • Kuang-Jung Chen
    • G06F3/041G06F3/045G06F3/044H01J9/00
    • G06F3/044G06F3/0412G06F2203/04111H01L27/323
    • A touch-sensing display apparatus including a touch panel, an environmentally sensitive electronic device and an adhesive layer is provided. The water/oxygen vapor transmission rate of the touch panel is lower than 10−1 g/m2*day, and the touch panel includes a first substrate, a sensing circuit and at least one water/oxygen barrier layer. The first substrate is a first flexible substrate. The sensing circuit and the water/oxygen barrier layer are disposed on the first substrate. The environmentally sensitive electronic device includes a second substrate and a pixel array. The pixel array is disposed on the second substrate and between the first substrate and the second substrate. The adhesive layer is disposed between the touch panel and the environmentally sensitive electronic device. Moreover, a fabricating method of the above-mentioned touch-sensing display apparatus is also provided.
    • 提供了包括触摸面板,环境敏感电子设备和粘合剂层的触摸感测显示设备。 触摸面板的水/氧气透过率低于10-1g / m2 *天,触控面板包括第一基板,检测电路和至少一个水/氧阻隔层。 第一衬底是第一柔性衬底。 感测电路和水/氧阻隔层设置在第一基板上。 环境敏感的电子设备包括第二基板和像素阵列。 像素阵列设置在第二基板上并且在第一基板和第二基板之间。 粘合剂层设置在触摸面板和环境敏感的电子设备之间。 此外,还提供了上述触摸感测显示装置的制造方法。
    • 46. 发明申请
    • PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS
    • 多层次光电子系统的多光照组合物和工艺
    • US20100248147A1
    • 2010-09-30
    • US12813628
    • 2010-06-11
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara R. Varanasi
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara R. Varanasi
    • G03F7/004
    • G03F7/0048G03F7/0035G03F7/0397G03F7/40
    • A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
    • 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层,图案地暴露第一光致抗蚀剂层,在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层,以图形方式暴露第一光致抗蚀剂层,在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。
    • 48. 发明申请
    • Si-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION
    • 用于纳米图案器件制造的含Si聚合物
    • US20080102401A1
    • 2008-05-01
    • US11554877
    • 2006-10-31
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiYi-Hsiung S. Lin
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiYi-Hsiung S. Lin
    • G03C1/00
    • G03F7/0758G03F7/0045
    • A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
    • 提供具有位于其中的纳米级图案的抗蚀剂聚合物,其为沿与其主表面(顶部和底部)基本垂直的方向取向的亚光刻中空孔(或开口)的形式。 具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。 在将纳米尺度图案转移到基底中之后,在基底中产生宽度小于50nm的纳米级空隙(或开口)。 电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。 根据本发明的一个方面,本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元(A)和含有有机组分的第二单体单元(B)的共聚物,其中所述 两个单体单元(A和B)具有不同的蚀刻速率。