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41. 发明授权

US09577140B2 Low-cost solar cell metallization over TCO and methods of their fabrication 有权
标题翻译：低成本的太阳能电池金属化TCO及其制造方法
公开(公告)号：US09577140B2
公开(公告)日：2017-02-21
申请号：US14710252
申请日：2015-05-12
申请人： Ashok Sinha , Roman Milter , Robert Broesler
发明人： Ashok Sinha , Roman Milter , Robert Broesler
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0224 , H01L31/0747 , H01L31/0236
CPC分类号： H01L31/1884 , H01L31/0201 , H01L31/022433 , H01L31/022466 , H01L31/02366 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/202 , Y02E10/50
摘要： Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.
摘要翻译：公开了用于在TCO上制造母线和手指金属化的方法。不是使用昂贵且相对电阻的银浆，而是使用高导电性和相对低成本的铜。公开了能够在TCO上使用铜作为母线和手指的方法，提供良好的粘合性，同时防止铜向TCO中的迁移。此外，还规定了易于与铜母线的焊接接触。

42. 发明申请

US20160111589A1 LOW-COST SOLAR CELL METALLIZATION OVER TCO AND METHODS OF THEIR FABRICATION 审中-公开
公开(公告)号：US20160111589A1
公开(公告)日：2016-04-21
申请号：US14710252
申请日：2015-05-12
申请人： Ashok Sinha , Roman Milter , Robert Broesler
发明人： Ashok Sinha , Roman Milter , Robert Broesler
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0224
CPC分类号： H01L31/1884 , H01L31/0201 , H01L31/022433 , H01L31/022466 , H01L31/02366 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/202 , Y02E10/50
摘要： Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

43. 发明授权

US08796066B2 Low-cost solar cells and methods for fabricating low cost substrates for solar cells 有权
标题翻译：低成本的太阳能电池和用于制造用于太阳能电池的低成本基板的方法
公开(公告)号：US08796066B2
公开(公告)日：2014-08-05
申请号：US12862334
申请日：2010-08-24
申请人： Ashok Sinha , Wen Ma
发明人： Ashok Sinha , Wen Ma
IPC分类号： H01L21/00 , H01L31/18 , H01L31/075
CPC分类号： H01L31/1804 , H01L31/075 , H01L31/186 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Substrates for solar cells are prepared by etching a plurality of metallurgical grade wafers; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride without disturbing the aluminum layer. A solar cell is then fabricated on the front surface of the wafer while the aluminum remain to serve as the back contact of the cell.
摘要翻译：通过蚀刻多个冶金级晶片来制备用于太阳能电池的基板; 在每个晶片的背面沉积铝层; 在每个晶片的前表面上沉积氢化氮化硅层; 在高温退火晶片; 在不干扰铝层的情况下除去氢化氮化硅。然后在晶片的前表面上制造太阳能电池，同时铝保持用作电池的背接触。

44. 发明授权

US08084683B2 Low-cost multi-junction solar cells and methods for their production 有权
公开(公告)号：US08084683B2
公开(公告)日：2011-12-27
申请号：US13107875
申请日：2011-05-14
申请人： Ashok Sinha
发明人： Ashok Sinha
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/0256 , H01L31/04 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

45. 发明申请

US20080194111A1 REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE 失效
标题翻译：去除基板背面的工艺残留物
公开(公告)号：US20080194111A1
公开(公告)日：2008-08-14
申请号：US11695918
申请日：2007-04-03
申请人： Gerardo A. Delgadino , Indrajit Lahiri , Teh-Tien Su , Sy-Yuan Brian Shieh , Ashok Sinha
发明人： Gerardo A. Delgadino , Indrajit Lahiri , Teh-Tien Su , Sy-Yuan Brian Shieh , Ashok Sinha
IPC分类号： H01L21/461 , C23F1/00
CPC分类号： H01L21/0209
摘要： A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
摘要翻译：衬底在包括衬底支撑件的处理室中进行处理，所述衬底支撑件具有用于接收衬底的接收表面，使得衬底的前表面暴露在腔室内。使用赋能的工艺气体来处理衬底的前表面。通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘，并且将基板的背面暴露于通电的清洁气体。

46. 发明申请

US20070207272A1 METHOD AND APPARATUS FOR MAGNETIC MIXING IN MICRON SIZE DROPLETS 审中-公开
标题翻译：用于磁性混合的方法和装置
公开(公告)号：US20070207272A1
公开(公告)日：2007-09-06
申请号：US11681344
申请日：2007-03-02
申请人： Ishwar K. Puri , Ranjan Ganguly , Ashok Sinha
发明人： Ishwar K. Puri , Ranjan Ganguly , Ashok Sinha
IPC分类号： G21H1/00 , B01F13/08 , B05C5/02
CPC分类号： B01F13/0059 , B01F13/0809
摘要： Active mixing by magnetic stirring is demonstrated inside a picoliter-size liquid droplet. Magnetic microspheres are added to the droplet, which form aligned chains under the influence of a homogeneous magnetic field. When the magnetic field is rotated, the chains also rotate synchronously. Viscous interaction between the particle-chains and the liquid induces advective motion inside the droplet thereby enhancing mixing which is otherwise diffusion-limited. The concept can be effectively used to create a lab-in-a-droplet for MEMS (Micro-Electrical-Mechanical Systems) and Bio-MEMS applications.
摘要翻译：通过磁力搅拌的主动混合体现在皮升液滴中。将磁性微球加到液滴中，在均匀磁场的影响下形成对齐的链。当磁场旋转时，链条也同步旋转。颗粒链和液体之间的粘性相互作用在液滴内引起平流运动，从而增强混合，否则扩散受限。该概念可以有效地用于为MEMS（微机电系统）和Bio-MEMS应用创建一个实验室。

47. 发明申请

US20050056536A1 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US20050056536A1
公开(公告)日：2005-03-17
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

48. 发明授权

US6129044A Apparatus for substrate processing with improved throughput and yield 有权
标题翻译：用于基板处理的装置，具有改善的生产量和产量
公开(公告)号：US6129044A
公开(公告)日：2000-10-10
申请号：US409477
申请日：1999-10-06
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C16/44 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/32 , C23C16/00 , G06F19/00
CPC分类号： C23C16/4411 , C23C16/4412 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/3244 , H01J37/32834 , H01J2237/2001
摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.
摘要翻译：本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。根据实施例，本发明提供了一种用于基板处理的装置。该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。热交换介质的热交换温度为约60℃以下。该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格一些基板。在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

49. 发明授权

US08236706B2 Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures 有权
标题翻译：用于在硅上生长薄氧化膜同时最小化对现有结构的影响的方法和装置
公开(公告)号：US08236706B2
公开(公告)日：2012-08-07
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

50. 发明申请

US20110223708A1 LOW-COST MULTI-JUNCTION SOLAR CELLS AND METHODS FOR THEIR PRODUCTION 审中-公开
标题翻译：低成本多功能太阳能电池及其生产方法
公开(公告)号：US20110223708A1
公开(公告)日：2011-09-15
申请号：US13107962
申请日：2011-05-16
申请人： Ashok Sinha
发明人： Ashok Sinha
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/0256 , H01L31/04 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
摘要翻译：公开了制造太阳能电池而不需要进行冶金级硅气化的方法。因此，避免了制造太阳能或硅级硅所涉及的成本和健康和环境危害。太阳能电池结构包括冶金级掺杂硅衬底和在衬底上形成的与衬底形成p-i-n结的薄膜结构。衬底可以掺杂p型，并且薄膜结构可以是在衬底上形成的本征非晶层和在本征层上形成的n型非晶层。

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