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41. 发明授权

US06716733B2 CVD-PVD deposition process 有权
标题翻译： CVD-PVD沉积工艺
公开(公告)号：US06716733B2
公开(公告)日：2004-04-06
申请号：US10170128
申请日：2002-06-11
申请人： Wei Ti Lee , Ted Guo
发明人： Wei Ti Lee , Ted Guo
IPC分类号： H01L213205
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76876 , H01L21/76877 , H01L21/76882
摘要： The present invention relates to a method for depositing metal layers on substrates with improved surface morphology. According to one aspect of the invention, a metal is deposited by chemical vapor deposition on a substrate having an aperture formed therein. A metal is then deposited on the substrate by physical vapor deposition performed with a low substrate temperature. The substrate is then heated. The substrate may then receive a metal deposited by physical vapor deposition performed at a high temperature and an additional heating step. The aperture of the resulting substrate is filled with metal and is substantially void-free and has a smooth surface morphology.
摘要翻译：本发明涉及一种在具有改进的表面形态的基底上沉积金属层的方法。根据本发明的一个方面，通过化学气相沉积将金属沉积在其上形成有孔的基底上。然后通过在低衬底温度下进行的物理气相沉积将金属沉积在衬底上。然后将基材加热。然后，基板可以接收通过在高温和附加加热步骤进行的物理气相沉积沉积的金属。所得衬底的孔径被填充金属，并且基本上无空隙并且具有光滑的表面形态。

42. 发明授权

US5763010A Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers 失效
标题翻译：卤素掺杂膜的热后沉积处理以提高膜的稳定性并减少卤素向互连层的迁移
公开(公告)号：US5763010A
公开(公告)日：1998-06-09
申请号：US646862
申请日：1996-05-08
申请人： Ted Guo , Barney M. Cohen , Amrita Verma
发明人： Ted Guo , Barney M. Cohen , Amrita Verma
IPC分类号： C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/316 , H01L21/768 , B05D3/02 , B05D1/36 , H05H1/24
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , G06Q30/0284 , H01L21/02274 , H01L21/02318 , H01L21/02362 , H01L21/3105 , H01L21/31629 , H01L21/76801 , H01L21/76828
摘要： A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300.degree. and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
摘要翻译：一种稳定卤素掺杂氧化硅膜以减少在后续处理步骤中从所述膜迁移的卤素原子的方法。将卤素掺杂的膜沉积在衬底上，然后进行脱气步骤，其中在沉积扩散阻挡层之前将膜短暂加热至约300℃至550℃的温度。据信这样的热处理步骤从卤素掺杂的膜去除松散键合的卤素原子，因此将该处理称为脱气步骤。在该实施方案的优选方案中，卤素掺杂氧化硅膜是经过脱气处理约35至50秒的FSG膜。

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