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    • 44. 发明授权
    • Polymeric compositions and uses therefor
    • 聚合物组合物及其用途
    • US06949609B2
    • 2005-09-27
    • US10317366
    • 2002-12-12
    • Larry F. RhodesRichard VicariLeah J. LangsdorfAndrew A. SobekEdwin P. BoydBrian Bennett
    • Larry F. RhodesRichard VicariLeah J. LangsdorfAndrew A. SobekEdwin P. BoydBrian Bennett
    • C08F32/00C08F8/00C08F114/18C08G61/06G03F7/004G03F7/039
    • C08G61/06G03F7/0046G03F7/0395G03F7/0397
    • The present invention relates to polycyclic polymers, methods for producing polycyclic polymers, and methods for their use as photoresists in the manufacture of integrated circuits. In one embodiment, the present invention relates to photoresist compositions formed from the polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer. In another embodiment, the present invention relates to photoresist compositions formed from the co-polymerization of at least one halogenated polycyclic monomer or hydrohalogenated polycyclic monomer with at least one non-halogenated polycyclic monomer. Additionally, the present invention relates to methods by which to post-treat such photoresist compositions in order to obtain one or more of: (1) a reduction in optical density of the polymer composition; and (2) a reduction in the amount of residual metal and/or monomer in the polymer composition. Also disclosed are catalyst systems for use in producing the photoresist compositions of the present invention which permit molecular weight control of the photoresist products.
    • 本发明涉及多环聚合物,多环聚合物的制备方法及其在制造集成电路中用作光致抗蚀剂的方法。 在一个实施方案中,本发明涉及由至少一种卤代多环单体或氢卤化多环单体的聚合形成的光致抗蚀剂组合物。 在另一个实施方案中,本发明涉及由至少一种卤代多环单体或氢卤化多环单体与至少一种非卤化多环单体的共聚合形成的光致抗蚀剂组合物。 另外,本发明涉及用于后处理这种光致抗蚀剂组合物以便获得以下一种或多种的方法:(1)聚合物组合物的光密度的降低; 和(2)聚合物组合物中残余金属和/或单体的量的减少。 还公开了用于制备本发明的光致抗蚀剂组合物的催化剂体系,其允许光致抗蚀剂产品的分子量控制。