专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07986498B2 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
标题翻译：在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件
公开(公告)号：US07986498B2
公开(公告)日：2011-07-26
申请号：US12321901
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。因此，Hin值可以减少1/3至约32 Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

42. 发明申请

US20100073827A1 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US20100073827A1
公开(公告)日：2010-03-25
申请号：US12284409
申请日：2008-09-22
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC）或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施例由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

43. 发明申请

US20090229111A1 Two step annealing process for TMR device with amorphous free layer 有权
标题翻译：具有无定形自由层的TMR器件的两步退火工艺
公开(公告)号：US20090229111A1
公开(公告)日：2009-09-17
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.
摘要翻译：公开了一种具有无定形自由层的TMR或GMR传感器的退火工艺，并采用了至少两个退火步骤。采用在温度T1为200〜270℃，t1为0.5〜15小时的第一次退火，在AFM和钉扎层中形成钉扎。在260℃至400℃的温度T2下进行第二次退火，其中T2> T1和t1> t2用于使无定形自由层结晶并完成钉扎。在两个退火步骤期间使用约8000Oe的施加磁场。用于形成具有高MR和鲁棒钉扎的传感器的机构可能涉及隧道势垒中的结构变化或自旋阀叠层中的两个层之间的界面处的结构变化。优选MgO隧道势垒和CoFe / CoB自由层。

44. 发明授权

US07564658B2 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US07564658B2
公开(公告)日：2009-07-21
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率除了较小的自由层矫顽力（HCF），层间耦合（HE）和HK值之外还观察到。

45. 发明申请

US20090165288A1 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
标题翻译：在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件
公开(公告)号：US20090165288A1
公开(公告)日：2009-07-02
申请号：US12321883
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。因此，Hin值可以减少1/3至约32 Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

46. 发明申请

US20070111332A1 Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
标题翻译：具有自然氧化双MgO阻挡层的低阻隧道磁阻传感器
公开(公告)号：US20070111332A1
公开(公告)日：2007-05-17
申请号：US11280523
申请日：2005-11-16
申请人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/307 , Y10T428/1114 , Y10T428/1143
摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.
摘要翻译：通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。可以改变NOX时间和压力以实现至少34％的MR比和2.1欧姆 - 欧姆的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。第二Mg层用于防止相邻铁磁层的氧化。在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽在读头。

47. 发明申请

US20070015293A1 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
标题翻译：在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件
公开(公告)号：US20070015293A1
公开(公告)日：2007-01-18
申请号：US11181176
申请日：2005-07-14
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有SyAP构造，其具有外部被钉扎层，Ru结合层和由CoFe X B Y / CoFe Z组成的内部钉扎层其中x = 0〜70原子％，y = 0〜30原子％，z = 0〜100原子％。通过用氧等离子体处理CoFe z z层来形成OSL。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。结果，Hin值可以减少1/3至约32Oe。对于TMR读取头应用，已经实现了25％的dR / R和3欧姆 - 厘米2的RA。

48. 发明申请

US20060061915A1 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US20060061915A1
公开(公告)日：2006-03-23
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

49. 发明授权

US08472151B2 TMR device with low magnetorestriction free layer 有权
标题翻译：具有低磁阻自由层的TMR器件
公开(公告)号：US08472151B2
公开(公告)日：2013-06-25
申请号：US13444497
申请日：2012-04-11
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA
摘要翻译：通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoB（λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。

50. 发明授权

US08339754B2 TMR or CPP structure with improved exchange properties 有权
标题翻译：具有改进的交换性能的TMR或CPP结构
公开(公告)号：US08339754B2
公开(公告)日：2012-12-25
申请号：US13135277
申请日：2011-06-30
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
摘要翻译：在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1至5埃厚的非磁性层。优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。可选地，插入层可以形成在AP2钉扎层内。插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式