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41. 发明申请

US20050175053A1 Integrated semiconductor light-emitting device and method for manufacturing same 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US20050175053A1
公开(公告)日：2005-08-11
申请号：US11038576
申请日：2005-01-21
申请人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
发明人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
IPC分类号： G11B7/125 , H01S5/02 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/40 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/32325 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.
摘要翻译：提供一种适于安装在拾取器上的集成半导体发光器件。集成半导体发光器件具有堆叠在半导体衬底上的第一激光器部分和以薄膜层形式堆叠形成的突出形状的第二激光器部分。第二激光器部件装配到与半导体衬底中的第一激光器部分相邻形成的沟槽中。至少第一和第二激光部分和沟槽通过金属粘结层粘合在一起。第一激光部的发光点和第二激光部的发光点位于与第一激光部和第二激光部的堆叠的方向垂直的大致相同的水平方向上。

42. 发明授权

US06795471B2 Group III nitride compound semiconductor laser and manufacturing method thereof 失效
标题翻译： III族氮化物半导体激光器及其制造方法
公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译：驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

43. 发明授权

US06335218B1 Method for fabricating a group III nitride semiconductor device 有权
标题翻译：制造III族氮化物半导体器件的方法
公开(公告)号：US06335218B1
公开(公告)日：2002-01-01
申请号：US09565025
申请日：2000-05-05
申请人： Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
发明人： Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
IPC分类号： H01L2100
CPC分类号： H01L33/325 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/32 , H01S5/32341
摘要： A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.
摘要翻译： III族氮化物半导体器件的制造方法是通过以下步骤构成的：形成由III族氮化物半导体（Al x Ga 1-x）1-y.InyN（0≤x≤1,0

44. 发明授权

US4278975A Navigation-monitoring apparatus 失效
标题翻译：导航监控装置
公开(公告)号：US4278975A
公开(公告)日：1981-07-14
申请号：US4533
申请日：1979-01-18
申请人： Yoshinori Kimura , Masuki Sunayama , Yoshiki Okamoto
发明人： Yoshinori Kimura , Masuki Sunayama , Yoshiki Okamoto
IPC分类号： G01S5/14 , G01S13/74 , G01S13/76 , G01S13/87 , G01S13/91
CPC分类号： G01S13/765 , G01S5/14
摘要： A navigation-monitoring apparatus comprises a fixed ground station sending forth an interrogation signal to a ship and a transponder carried on the ship and transmitting a reply signal to the fixed ground station in response to the interrogation signal. A microwave sensor carried on the ship measures the distance between the ship and the nearest bank. Data on the measured distance is added to a reply signal sent forth from the ship to the fixed ground station. The fixed ground station measures an interval between a point of time at which the interrogation signal was issued and a point of time at which a reply signal from the ship was received, thereby defining the position of the ship from said time interval and data on the ship-to-bank distance.
摘要翻译：导航监视装置包括固定地面站，向船上发送询问信号和承载在船上的应答器，并响应于询问信号向固定地面站发送应答信号。船上携带的微波传感器测量船舶与最近的岸线之间的距离。将测量距离的数据添加到从船舶发送到固定地面站的应答信号。固定地面站测量发出询问信号的时间点和接收到来自船舶的回复信号的时间点之间的时间间隔，从而从所述时间间隔定义船舶的位置，并且在船到岸距离。

45. 发明授权

US4069472A Foreground subject-identifying apparatus 失效
标题翻译：前景主体识别装置
公开(公告)号：US4069472A
公开(公告)日：1978-01-17
申请号：US753530
申请日：1976-12-22
申请人： Shohichi Kamata , Yoshinori Kimura , Johji Sakuragi
发明人： Shohichi Kamata , Yoshinori Kimura , Johji Sakuragi
IPC分类号： B61L25/04 , G01S13/75 , G06K19/067 , G08G1/017 , H04L27/26 , G01S9/56
CPC分类号： B61L25/04 , B61L25/043 , B61L25/045 , G01S13/753 , G06K19/0672 , G08G1/017 , H04L27/26
摘要： A foreground subject-identifying apparatus comprises a sweep signal generator for issuing a sweep signal having frequencies f.sub.s falling within a prescribed range; a carrier wave generator for producing a carrier wave having a frequency f.sub.0 ; a first frequency mixer for mixing output signals from the sweep signal generator and carrier wave generator to generate an output signal having a frequency f.sub.0 .+-.f.sub.s ; a first antenna through which to transmit an output signal from the first frequency mixer; a second antenna mounted on the foreground subject to receive an output signal sent forth from the first antenna; a coding circuit carried on the foreground subject which is provided with a plurality of resonance circuits resonating at different frequencies f.sub.T and adapted to form a specified code from a combination of these different resonance frequencies; a signal mixer for detecting an output signal from the second antenna to supply a signal having frequencies f.sub.s to the coding circuit and modulating the signal having a frequency f.sub.0 by resonance signals from the coding circuit to deliver a signal having a frequency f.sub.0 .+-.f.sub.T to the second antenna; a second frequency mixer for mixing an output signal having a frequency f.sub.0 from the carrier wave generator, and a signal having a frequency f.sub.0 .+-. f.sub.T received from the signal mixer through the second and first antennas and thereby issuing a signal having a frequency f.sub.T ; and a coded signal interpreting circuit for detecting resonance frequencies out of a signal delivered from the second frequency mixer, thereby interpreting a coded signal supplied from the coding circuit.
摘要翻译：前景主体识别装置包括：扫描信号发生器，用于发出频率fs落在规定范围内的扫频信号; 用于产生具有频率f0的载波的载波发生器; 用于混合来自扫描信号发生器和载波发生器的输出信号以产生具有频率f0 +/- fs的输出信号的第一混频器; 第一天线，用于从第一混频器发送输出信号; 安装在前景主体上的第二天线，用于接收从第一天线发出的输出信号; 在前景对象上承载的编码电路，其设置有以不同频率fT谐振并适于从这些不同谐振频率的组合形成指定代码的多个谐振电路; 信号混合器，用于检测来自第二天线的输出信号，以将具有频率fs的信号提供给编码电路，并且通过来自编码电路的谐振信号调制具有频率f0的信号，以将具有频率f0 +/- fT的信号传送到第二个天线; 用于混合来自载波发生器的具有频率f0的输出信号的第二混频器和通过第二和第一天线从信号混合器接收的具有频率f0 +/- fT的信号，从而发出具有频率fT的信号; 以及编码信号解释电路，用于从第二混频器传送的信号中检测谐振频率，从而解释从编码电路提供的编码信号。

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