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41. 发明申请

US20090124246A1 USER EQUIPMENT, METHOD AND SYSTEM FOR SIMULTANEOUS SESSION CONTROL 有权
标题翻译：用户设备，同步会话控制的方法和系统
公开(公告)号：US20090124246A1
公开(公告)日：2009-05-14
申请号：US12353220
申请日：2009-01-13
申请人： Kang-Suk HUH , Young-Hwan Park , Chan Seok Lim , Jong-Chul Park , Young-Ae Kim
发明人： Kang-Suk HUH , Young-Hwan Park , Chan Seok Lim , Jong-Chul Park , Young-Ae Kim
IPC分类号： H04M3/00
CPC分类号： H04L65/4061 , H04L65/1006 , H04L65/1016 , H04L67/14 , H04W28/18 , H04W80/00 , H04W88/06
摘要： A user equipment (UE), method and system for processing session based communications, are discussed. According to an embodiment, the method includes receiving a message from a terminal that informs whether the terminal supports simultaneous PT (push-to) sessions; recognizing that the terminal supports simultaneous PT sessions according to the received message; and transporting data to one or more terminals through the server operating in B2BUA (Back-to-Back User Agent) mode, wherein a simultaneous PT session refers to a session where the server performs a PT session priority function or a PT session locking function.
摘要翻译：讨论了用于处理基于会话的通信的用户设备（UE），方法和系统。根据实施例，该方法包括：从终端接收消息，通知终端是否同时支持PT（推送）会话; 识别终端根据收到的消息支持PT会话; 并且通过B2BUA（背靠背用户代理）模式运行的服务器将数据传送到一个或多个终端，其中同时PT会话是指服务器执行PT会话优先级功能或PT会话锁定功能的会话。

42. 发明申请

US20080277836A1 METHOD FOR PRODUCING NANO-FIBER WITH UNIFORMITY 审中-公开
标题翻译：用于生产具有均匀性的纳米纤维的方法
公开(公告)号：US20080277836A1
公开(公告)日：2008-11-13
申请号：US12098760
申请日：2008-04-07
申请人： Jong-Chul Park
发明人： Jong-Chul Park
IPC分类号： B29C47/00
CPC分类号： D01D5/0061
摘要： The present invention relates to a method for the mass-production of nanofiber through electrospinning, particularly to a method for the mass-production of nanofiber having required properties by adjusting the spinning condition of a spinning area in which nozzle blocks and collectors are installed for electrospinning the spinning solution with uniformity. The method for producing nanofiber by electrospinning comprises the steps of determining a spinning area formed by a nozzle block in which a plurality of spinning nozzles are arranged and a collector on which nanofiber are collected; determining factors in adjusting physical properties of nanofiber in the spinning area; and adjusting the determined factors and electrospinning in the spinning area.
摘要翻译：本发明涉及通过静电纺丝技术大规模生产纳米纤维的方法，特别涉及一种通过调节其中安装喷嘴块和集电器的纺丝区域的纺丝区域进行静电纺丝的具有所需性能的大规模生产纳米纤维的方法纺丝溶液均匀。通过静电纺丝制造纳米纤维的方法包括以下步骤：确定由其中排列有多个纺丝喷嘴的喷嘴块形成的纺丝区域和收集纳米纤维的收集器; 确定纺丝区纳米纤维物理性质的因素; 并在纺纱区域中调整确定的因子和静电纺丝。

43. 发明授权

US07438765B2 Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods 失效
标题翻译：用于调整半导体晶片的蚀刻区域的可调节屏蔽板及相关装置和方法
公开(公告)号：US07438765B2
公开(公告)日：2008-10-21
申请号：US11119490
申请日：2005-04-29
申请人： Jong-Chul Park , Sang-sup Jeong
发明人： Jong-Chul Park , Sang-sup Jeong
IPC分类号： B05B5/025 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J2237/334 , H01L21/02087 , H01L21/67069
摘要： An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position configured to shield a portion of a semiconductor wafer from an etching gas and a second position configured to expose an unshielded etching portion of the semiconductor wafer to the etching gas.
摘要翻译：用于调整半导体晶片的蚀刻区域的装置包括可调节屏蔽板。可调节屏蔽板包括多个屏蔽构件。多个屏蔽部件中的每一个可以在构造成从蚀刻气体屏蔽半导体晶片的一部分的第一位置和被配置为将半导体晶片的非屏蔽蚀刻部分暴露于蚀刻气体的第二位置之间移动。

44. 发明申请

US20060229094A1 User equipment, method and system for simultaneous session control 有权
标题翻译：用于同时进行会话控制的用户设备，方法和系统
公开(公告)号：US20060229094A1
公开(公告)日：2006-10-12
申请号：US11401367
申请日：2006-04-11
申请人： Kang-Suk Huh , Young-Hwan Park , Chan-Seok Lim , Jong-Chul Park , Young-Ae Kim
发明人： Kang-Suk Huh , Young-Hwan Park , Chan-Seok Lim , Jong-Chul Park , Young-Ae Kim
IPC分类号： H04B1/38 , H04B7/00 , H04Q7/20
CPC分类号： H04L65/4061 , H04L65/1006 , H04L65/1016 , H04L67/14 , H04W28/18 , H04W80/00 , H04W88/06
摘要： A user equipment (UE), method and system for controlling a simultaneous session are discussed. According to an embodiment, the system includes a UE to transmit a SIP message including simultaneous sessions support (SSS) setting information associated with the UE to a home network including a server; and the server to store the SSS setting information therein, and to set a session operation mode of the server for a simultaneous session of the UE based on, in part, the SSS setting information.
摘要翻译：讨论了用于控制同时会话的用户设备（UE），方法和系统。根据一个实施例，该系统包括一个UE，用于向包括服务器的家庭网络发送包括与UE相关联的同时会话支持（SSS）设置信息的SIP消息; 以及服务器，用于存储其中的SSS设置信息，并且部分地基于SSS设置信息来设置用于UE的同时会话的服务器的会话操作模式。

45. 发明授权

US07109080B2 Method of forming capacitor over bitline contact 有权
标题翻译：通过位线接触形成电容器的方法
公开(公告)号：US07109080B2
公开(公告)日：2006-09-19
申请号：US11033447
申请日：2005-01-12
申请人： Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
发明人： Yong-Woo Lee , Jong-Chul Park , O-Ik Kwon , Sang-Sup Jeong
IPC分类号： H01L21/8242
CPC分类号： H01L27/10855 , H01L27/10885 , H01L27/10888
摘要： A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact is connected to the second pad. A bit line electrically insulated from the storage node contact by a spacer and electrically connected to the first pad.
摘要翻译：一种通过在其上形成有第一焊盘和第二焊盘的半导体衬底中形成存储节点接触来形成半导体器件的接触的方法。存储节点触点连接到第二焊盘。与存储节点接触的位线通过间隔物电绝缘并电连接到第一焊盘。

46. 发明申请

US20050150559A1 Apparatus and method for controlling exhaust pressure in semiconductor manufacturing 失效
标题翻译：用于控制半导体制造中排气压力的装置和方法
公开(公告)号：US20050150559A1
公开(公告)日：2005-07-14
申请号：US11032103
申请日：2005-01-11
申请人： Hyuk Kwon , Jong-Chul Park
发明人： Hyuk Kwon , Jong-Chul Park
IPC分类号： H01L21/02 , F16K3/32 , F16K3/34
CPC分类号： F16K3/34 , F16K1/222 , F16K1/223 , F16K3/0209 , F16K3/32 , F16K51/02 , Y10T137/7761 , Y10T137/8696 , Y10T137/87378
摘要： An apparatus and method for controlling exhaust produced by a reactive chamber is provided. The apparatus for controlling exhaust may include, for example, a valve body having an exhaust hole for the exhaust to pass through, and may include a first and second valve which regulate the opening and/or the closing of the exhaust hole. A control device may control the operation of the first and second valves based on the internal pressure of the reactive chamber.
摘要翻译：提供了一种用于控制由反应室产生的排气的装置和方法。用于控制排气的装置可以包括例如具有用于排气通过的排气孔的阀体，并且可以包括调节排气孔的打开和/或关闭的第一和第二阀。控制装置可以基于反应室的内部压力来控制第一和第二阀的操作。

47. 发明授权

US08058168B2 Method of fabricating semiconductor device having metal-semiconductor compound regions 有权
标题翻译：制造具有金属 - 半导体化合物区域的半导体器件的方法
公开(公告)号：US08058168B2
公开(公告)日：2011-11-15
申请号：US12656885
申请日：2010-02-18
申请人： Jong-Chul Park , Yun-Seung Kang
发明人： Jong-Chul Park , Yun-Seung Kang
IPC分类号： H01L21/44
CPC分类号： H01L29/7827 , H01L29/456 , H01L29/66666
摘要： Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern.
摘要翻译：示例性实施例涉及制造具有金属 - 半导体化合物区域的半导体器件的方法。根据示例性实施例的方法可以包括在半导体衬底上形成半导体柱。半导体柱之间的半导体衬底可以被蚀刻以形成沟槽区域。可以形成部分地填充沟槽区域的介电隔离图案，并且可以在半导体柱的侧壁上形成电介质侧壁间隔物。金属 - 半导体化合物区域可以形成在未被隔离图案填充的沟槽区域的一部分的侧壁上。

48. 发明授权

US07991898B2 User equipment, method and system for simultaneous session control 有权
标题翻译：用于同时进行会话控制的用户设备，方法和系统
公开(公告)号：US07991898B2
公开(公告)日：2011-08-02
申请号：US11401367
申请日：2006-04-11
申请人： Kang-Suk Huh , Young-Hwan Park , Chan-Seok Lim , Jong-Chul Park , Young-Ae Kim
发明人： Kang-Suk Huh , Young-Hwan Park , Chan-Seok Lim , Jong-Chul Park , Young-Ae Kim
IPC分类号： G06F15/16 , H04B1/38
CPC分类号： H04L65/4061 , H04L65/1006 , H04L65/1016 , H04L67/14 , H04W28/18 , H04W80/00 , H04W88/06
摘要： A user equipment (UE), method and system for controlling a simultaneous session are discussed. According to an embodiment, the system includes a UE to transmit a SIP message including simultaneous sessions support (SSS) setting information associated with the UE to a home network including a server; and the server to store the SSS setting information therein, and to set a session operation mode of the server for a simultaneous session of the UE based on, in part, the SSS setting information.
摘要翻译：讨论了用于控制同时会话的用户设备（UE），方法和系统。根据一个实施例，该系统包括一个UE，用于向包括服务器的家庭网络发送包括与UE相关联的同时会话支持（SSS）设置信息的SIP消息; 以及服务器，用于存储其中的SSS设置信息，并且部分地基于SSS设置信息来设置用于UE的同时会话的服务器的会话操作模式。

49. 发明授权

US07863677B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07863677B2
公开(公告)日：2011-01-04
申请号：US12212356
申请日：2008-09-17
申请人： Jong-Chul Park , Sang-Sup Jeong
发明人： Jong-Chul Park , Sang-Sup Jeong
IPC分类号： H01L29/66
CPC分类号： H01L27/0207 , H01L21/76897 , H01L21/823425 , H01L21/823437 , H01L29/7833
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a plurality of active regions which are defined in a semiconductor substrate, a plurality of gate lines which are formed as zigzag lines, extend across the active regions, are symmetrically arranged, and define a plurality of first regions and a plurality of second regions therebetween, and wherein the first regions being narrower than the second regions. The semiconductor device further includes an insulation layer which defines a plurality of contact regions by filling empty spaces in the first regions between the gate lines and, extending from the first regions, and surrounding sidewalls of portions of the gate lines in the second regions, and wherein the contact regions partially exposing the active regions and a plurality of contacts which respectively fill the contact regions.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括限定在半导体衬底中的多个有源区，被形成为锯齿形线的多条栅极线，跨过有源区延伸，对称地排列，并且限定多个第一区和多个第二区域，其中第一区域比第二区域窄。半导体器件还包括绝缘层，其通过填充栅极线之间的第一区域中的空白空间和从第一区域延伸并在第二区域中的栅极线的部分周围的侧壁填充多个接触区域，以及其中所述接触区域部分地暴露所述有源区域和分别填充所述接触区域的多个触点。

50. 发明申请

US20100259998A1 Non-volatile RAM, and solid state drive and computer system including the same 有权
标题翻译：非易失性RAM，以及固态硬盘和计算机系统都包含在内
公开(公告)号：US20100259998A1
公开(公告)日：2010-10-14
申请号：US12662221
申请日：2010-04-06
申请人： Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
发明人： Min Cheol Kwon , Dong Jun Shin , Sun-Mi Yoo , Jong-Chul Park
IPC分类号： G11C7/10
CPC分类号： G11C7/04 , G06F3/0679 , G11C7/22 , G11C13/004 , G11C13/0069
摘要： The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.
摘要翻译：非易失性随机存取存储器（RAM）包括非易失性RAM阵列，被配置为缓冲要在非易失性RAM阵列中编程的数据并被配置为缓冲从非易失性RAM阵列读取的数据的缓冲器，以及控制块，其被配置为基于是否将要读取的数据存储在缓冲器中，从数据被编程的温度以及从编程开始的时间流逝从非易失性RAM阵列和缓冲器中的至少一个读取数据的数据。

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