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    • 1. 发明专利
    • Apparatus for bidirectionally tracking and condensing sunlight of roof installation type
    • 用于双向跟踪和冷凝室内安装类型的装置
    • JP2010283323A
    • 2010-12-16
    • JP2009223528
    • 2009-09-28
    • Green Plus Co LtdYoung Hwan Parkグリーン プラス カンパニー リミテッドユング フワン パク
    • PARK YOUNG HWAN
    • H01L31/042E04D13/18
    • F24J2/541F24J2/045F24J2002/5451F24J2002/5462F24J2002/5468Y02B10/20Y02E10/47
    • PROBLEM TO BE SOLVED: To provide an apparatus for bidirectionally tracking and condensing sunlight of roof installation type, which traces the direction of sunlight to maximize condensing efficiency and strengthens a roof fixing structure thereof.
      SOLUTION: The apparatus for bidirectionally tracking and condensing sunlight includes: a horizontal truss 105; a roof truss 115; an open hinge 102; many first solar module plates 201 and second solar module plates 401 formed on both inclined surfaces on the outer side of the roof truss respectively to condense sunlight, bidirectionally connected at the upper portion to the open hinge so as to be turned, and linked and installed in the lateral direction while being in surface contact with each other on the left and right; and driving means 200 and 400 for supporting lower portions of many first solar module plates and second solar module plates and pushing and pulling the lower portions to turn many first solar module plates and second solar module plates in both left and right directions around the hinge respectively separately or altogether.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种用于双向跟踪和集中屋顶安装类型的阳光的装置,其追踪太阳光的方向以最大化冷凝效率并且增强其屋顶固定结构。 解决方案:用于双向跟踪和集中太阳光的装置包括:水平桁架105; 屋顶桁架115; 打开铰链102; 多个第一太阳能模块板201和第二太阳能模块板401分别形成在屋顶桁架外侧的两个倾斜表面上,以分别将阳光聚集在一起,双向连接在上部,以打开铰链,以便转动,连接和安装 在左右方向上彼此表面接触; 以及用于支撑许多第一太阳能模块板和第二太阳能模块板的下部的驱动装置200和400,并且推动和拉动下部以分别围绕铰链在左右两个方向上转动许多第一太阳能模块板和第二太阳能模块板 单独或完全。 版权所有(C)2011,JPO&INPIT
    • 4. 发明专利
    • Two-way ventilation window opening/closing device in greenhouse roof
    • 温室屋顶两通风窗打开/关闭装置
    • JP2012100545A
    • 2012-05-31
    • JP2010249235
    • 2010-11-06
    • Green Plus Co LtdYoung Hwan Parkグリーン プラス カンパニー リミテッドユング フワン パク
    • PARK YOUNG HWAN
    • A01G9/24
    • Y02A40/268Y02P60/147
    • PROBLEM TO BE SOLVED: To provide a two-way ventilation window opening/closing device in a greenhouse roof, capable of increasing the ventilation amount of interior air by expanding the ventilation area, capable of reducing loads applied to a support frame of a greenhouse, and capable of effectively bearing the wind and loads.SOLUTION: The two-way ventilation window opening/closing device includes: a horizontal truss; a roof truss which forms a roof member above the horizontal truss; a ventilation window formed in the roof member; a number of open hinges which are horizontally long at the upper end of the roof truss and which are arranged in the vertical direction; a number of first and second opening/closing members which are formed on both inclined surfaces on the outside of the roof truss for opening/closing the ventilation window, whose tops are rotatably connected to the open hinges in both directions, and which are set in such a way as operatively connected in plane-contact with one another in the lateral direction; and a driving means which supports the bottoms of the first and second opening/closing members and rotates a number of the first and second opening/closing members around the hinges respectively in the lateral direction on both sides by pushing or pulling the bottoms of the members.
    • 要解决的问题:为了在温室屋顶中设置双向通风窗打开/关闭装置,能够通过扩大通风面积来增加内部空气的通风量,能够减少施加在支撑框架上的负荷 温室,能够有效承受风荷载。 解决方案:双向通风窗打开/关闭装置包括:水平桁架; 在水平桁架上方形成屋顶构件的屋顶桁架; 形成在屋顶构件中的通风窗; 多个敞开铰链,其在屋顶桁架的上端处水平地长并且沿垂直方向排列; 多个第一和第二开/关构件,其形成在屋顶桁架的外侧的两个倾斜表面上,用于打开/关闭通风窗,其顶部沿两个方向可旋转地连接到开放铰链,并且设置在 这种方式在横向上彼此平面接触地可操作地连接; 以及驱动装置,其支撑第一和第二打开/关闭构件的底部,并且通过推动或拉动构件的底部,在两侧沿横向方向分别围绕铰链旋转多个第一和第二打开/关闭构件 。 版权所有(C)2012,JPO&INPIT
    • 5. 发明授权
    • Semicondutor device
    • 半导体器件
    • US08896026B2
    • 2014-11-25
    • US13137311
    • 2011-08-04
    • Woo Chul JeonKi Yeol ParkYoung Hwan Park
    • Woo Chul JeonKi Yeol ParkYoung Hwan Park
    • H01L31/072H01L31/109
    • H01L29/7787H01L29/2003H01L29/402H01L29/42368H01L29/42376H01L29/475H01L29/66462
    • Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
    • 提供一种氮化物半导体器件,其包括:氮化物半导体层,其在氮化物半导体内部具有二维电子气体(2DEG)通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极,其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极,其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间,并且介电层插入其间;以及其制造方法 。
    • 6. 发明授权
    • Nitride based semiconductor device and manufacturing method thereof
    • 氮化物基半导体器件及其制造方法
    • US08841704B2
    • 2014-09-23
    • US13406123
    • 2012-02-27
    • Young Hwan ParkWoo Chul JeonKi Yeol ParkSeok Yoon Hong
    • Young Hwan ParkWoo Chul JeonKi Yeol ParkSeok Yoon Hong
    • H01L29/66
    • H01L29/66462H01L29/2003H01L29/7787
    • Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.
    • 本文公开了一种氮化物基半导体器件,包括:衬底; 在衬底上具有下氮化物基半导体层和上部氮化物基半导体层的氮化物基半导体层; 隔离区域,包括下部氮化物基半导体层和上部氮化物基半导体层之间的界面; 以及形成在上部氮化物基半导体层上的漏电极,源电极和栅电极。 根据本发明的优选实施例,在基于氮化物的半导体器件中,通过使用包括下部氮化物基半导体层和上部氮化物类半导体层之间的界面的隔离区域,解决寄生电容和漏电流的问题, 结果,可以通过栅极焊盘改善切换速度。
    • 7. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US08716754B2
    • 2014-05-06
    • US13429148
    • 2012-03-23
    • Young Hwan ParkWoo Chul JeonKi Yeol ParkSeok Yoon Hong
    • Young Hwan ParkWoo Chul JeonKi Yeol ParkSeok Yoon Hong
    • H01L31/072
    • H01L29/42316H01L29/1066H01L29/2003H01L29/66462H01L29/7787
    • The present invention relates to a nitride semiconductor device One aspect of the present invention provides a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers.
    • 本发明涉及氮化物半导体器件本发明的一个方面提供一种氮化物半导体器件,其包括:具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 形成在所述源极和漏极之间的所述氮化物半导体层上的p型氮化物层; 形成在p型氮化物层上的n型氮化物层; 以及形成在源电极和漏电极之间的栅电极,以接近源电极并与n型氮化物层接触,使得源侧侧壁与p型和n型源极侧的侧壁对准 型氮化物层。