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41. 发明申请

US20080023651A1 TDI detecting device, a feed-through equipment, an electron beam apparatus using these device and equipment, and a semiconductor device manufacturing method using the same electron beam apparatus 有权
标题翻译： TDI检测装置，馈通装置，使用这些装置和设备的电子束装置，以及使用该电子束装置的半导体装置的制造方法
公开(公告)号：US20080023651A1
公开(公告)日：2008-01-31
申请号：US11896519
申请日：2007-09-04
申请人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
发明人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
IPC分类号： G01J1/00
CPC分类号： H01J37/222 , G01N21/956 , H01J37/224 , H01J37/244 , H01J2237/2445 , H01J2237/2447 , H01R13/2421 , H04N5/2253 , Y10S439/935
摘要： An electron beam apparatus comprises a TDI sensor 64 and a feed-through device 50. The feed-through device has a socket contact 54 for interconnecting a pin 52 attached to a flanged 51 for separating different environments and the other pin 53 making a pair with the pin 52, in which the pin 52, the other pin 53 and the socket contact 54 together construct a connecting block, and the socket contact 54 has an elastic member 61. Accordingly, even if a large number of connecting blocks are provided, the connecting force may be kept to such a low level as to prevent the breakage in the sensor. The pin 53 is connected with the TDI sensor 64, in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system to as small as possible so that a maximal acceptable distortion within the field of view may be set larger. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要翻译：电子束装置包括TDI传感器64和馈通装置50.馈通装置具有插座触点54，用于互连连接到凸缘51的引脚52，用于分离不同的环境，而另一个引脚53与销52，销52，另一销53和插座接触54一起构成连接块，插座触头54具有弹性构件61.因此，即使设置了大量的连接块，连接力可以保持在如此低的水平，以防止传感器中的破损。引脚53与TDI传感器64连接，其中像素阵列已经基于图像投影光学系统的光学特性被自适应地配置。该传感器具有可以将图像投影光学系统的视野尽可能地减小的多个积分级，使得视野内的最大可接受失真可以被设定得更大。此外，可以确定积分级的数量，使得TDI传感器的数据速率不会降低，但是引脚的数量不会尽可能多地增加。优选地，行计数的数量可以几乎等于积分级数。

42. 发明授权

US06992290B2 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US06992290B2
公开(公告)日：2006-01-31
申请号：US09985317
申请日：2001-11-02
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

43. 发明申请

US20050158653A1 Sample surface inspection apparatus and method 有权
标题翻译：样品表面检查装置及方法
公开(公告)号：US20050158653A1
公开(公告)日：2005-07-21
申请号：US10511396
申请日：2003-04-17
申请人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
发明人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
IPC分类号： G01N23/225 , G03F7/16 , H01L21/66 , G03C1/492
CPC分类号： G03F7/162 , G01N23/225 , H01J37/285 , H01J2237/204 , H01J2237/2812 , H01J2237/2814 , H01J2237/2855 , H01J2237/2857
摘要： The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
摘要翻译：本发明提供了一种表面检查方法和装置，用于检查表面上涂覆有电阻膜的样品的表面，并且将光束照射到其上涂覆有电阻膜的表面，从而进行样品表面。在本发明的表面检查方法中，首先将具有任意确定的厚度t 1的电阻膜涂覆在样品的表面上。此后，将具有任意确定的厚度t 1的电阻膜的一部分溶解在溶剂中，从而将电阻膜的厚度减小到期望的水平。这能够精确地控制电阻膜的电阻值并抑制要检测的图像的失真。

44. 发明授权

US06855929B2 Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former 有权
标题翻译：用于电子束检查的装置，其操作方法以及使用前者制造半导体器件的方法
公开(公告)号：US06855929B2
公开(公告)日：2005-02-15
申请号：US09985324
申请日：2001-11-02
申请人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
发明人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/06 , H01J37/073 , H01J37/18 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , G01N23/00 , G21K7/00
CPC分类号： H01J37/222 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/244 , H01J37/28 , H01J2237/0216 , H01J2237/082 , H01J2237/2002 , H01J2237/2007 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2813 , H01J2237/2816 , H01J2237/2817 , H01L2224/48227 , H01L2924/01019 , H01L2924/01025 , H01L2924/01057 , H01L2924/01067 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/3025 , H01L2924/00
摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1 maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
摘要翻译：本发明的基板检查装置1-1（图1）执行以下步骤：将要检查的基板“S”运送到在检查室中保持真空的检查室23-1中; 将所述检查室与振动隔离; 通过具有至少一个自由度的平台26-1连续移动所述衬底; 照射具有指定宽度的电子束; 帮助所述电子束经由一次电子光学系统10-1到达所述衬底的表面; 通过二次电子光学系统20-1捕获从所述衬底发射的二次电子并将其引导到检测系统35-1; 基于由所述检测系统获得的二次电子束的检测信号，在图像处理系统中形成二次电子图像; 基于由所述图像处理系统形成的二次电子图像检测所述基板中的缺陷位置; 通过CPU37-1指示和/或存储所述衬底中的所述缺陷位置; 并将完全检查的基板从检查室中取出。因此，可以以高水平的精度和效率以及更高的生产量连续地执行基板上的缺陷检查。

45. 发明申请

US20080067377A1 ELECTRON BEAM APPARATUS AND AN ABERRATION CORRECTION OPTICAL APPARATUS 有权
标题翻译：电子束装置和抛光校正光学装置
公开(公告)号：US20080067377A1
公开(公告)日：2008-03-20
申请号：US11760235
申请日：2007-06-08
申请人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata
发明人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata
IPC分类号： G21K7/00
CPC分类号： H01J37/153 , H01J37/065 , H01J2237/061 , H01J2237/06375 , H01J2237/083 , H01J2237/1534 , H01J2237/24592 , H01J2237/28
摘要： An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1/4 plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
摘要翻译：一种用于提供诸如半导体晶片的样品的评估的电子束装置，其包括具有不大于0.1μm的最小线宽的微量图案，具有高生产量。由电子枪产生的一次电子束照射在样品上，从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。电子枪61具有阴极1和拉伸电极3，阴极的电子发射表面1a限定凹面。拉制电极3具有由面对阴极的电子发射表面1a的第二球体的部分外表面和由电子通过凸面形成的孔73构成的凸面3a。像差校正光学装置包括两个相同大小的多极维恩滤波器，其布置成使得它们的中心分别与像差校正光学中的物平面图像平面段的1/4平面位置和¾平面位置对准装置和具有分别设置在像差校正光学装置中的物平面位置，中间图像形成平面位置和图像平面位置的双向焦点的光学元件。

46. 发明申请

US20060219909A1 Detecting apparatus and device manufacturing method 有权
公开(公告)号：US20060219909A1
公开(公告)日：2006-10-05
申请号：US11435128
申请日：2006-05-17
申请人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
发明人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/244 , G01N21/9501 , G03F1/84 , H01J37/285 , H01J2237/2441 , H01J2237/2446
摘要： A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.

47. 发明授权

US07075072B2 Detecting apparatus and device manufacturing method 有权
公开(公告)号：US07075072B2
公开(公告)日：2006-07-11
申请号：US10237986
申请日：2002-09-10
申请人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
发明人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
IPC分类号： G01N23/00
CPC分类号： H01J37/244 , G01N21/9501 , G03F1/84 , H01J37/285 , H01J2237/2441 , H01J2237/2446
摘要： A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.

48. 发明授权

US07863580B2 Electron beam apparatus and an aberration correction optical apparatus 有权
标题翻译：电子束装置和像差校正光学装置
公开(公告)号：US07863580B2
公开(公告)日：2011-01-04
申请号：US11760235
申请日：2007-06-08
申请人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama
发明人： Masahiro Hatakeyama , Takeshi Murakami , Nobuharu Noji , Mamoru Nakasuji , Hirosi Sobukawa , Satoshi Mori , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama
IPC分类号： G21K1/08 , H01J3/14 , H01J3/26
CPC分类号： H01J37/153 , H01J37/065 , H01J2237/061 , H01J2237/06375 , H01J2237/083 , H01J2237/1534 , H01J2237/24592 , H01J2237/28
摘要： An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.
摘要翻译：一种用于提供诸如半导体晶片的样品的评估的电子束装置，其包括具有不大于0.1μm的最小线宽的微图案，具有高生产量。由电子枪产生的一次电子束照射在样品上，从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。电子枪61具有阴极1和牵伸电极3，阴极的电子发射表面1a限定凹面。拉制电极3具有由与阴极的电子发射表面1a相对的第二球体的局部外表面和由电子通过凸面形成的孔73构成的凸面3a。像差校正光学装置包括两个相同尺寸的多极维纳滤光器，其布置成使得它们的中心分别沿着像差校正光学装置中的物平面图像平面段与¼平面位置和¾平面位置对准，以及分别设置在像差校正光学装置中的物平面位置，中间图像形成面位置和像面位置的具有双向焦点的光学元件。

49. 发明授权

US07449691B2 Detecting apparatus and device manufacturing method 有权
标题翻译：检测装置和装置制造方法
公开(公告)号：US07449691B2
公开(公告)日：2008-11-11
申请号：US11435128
申请日：2006-05-17
申请人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
发明人： Masahiro Hatakeyama , Takeshi Murakami , Tohru Satake , Nobuharu Noji , Ichirota Nagahama , Yuichiro Yamazaki
IPC分类号： G01N23/00
CPC分类号： H01J37/244 , G01N21/9501 , G03F1/84 , H01J37/285 , H01J2237/2441 , H01J2237/2446
摘要： A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.
摘要翻译：一种用于检测样品表面上的精细几何形状的检测装置，其中照射束照射放置在不同于大气的不同环境中的样品，并且由传感器检测从样品发出的二次辐射，并且其中传感器设置在不同环境的内部，处理来自传感器的检测信号的处理装置设置在不同环境的外部，传输装置将检测信号从传感器传送到处理装置。

50. 发明申请

US20090026368A1 APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE 有权
标题翻译：检测样品表面的装置和方法
公开(公告)号：US20090026368A1
公开(公告)日：2009-01-29
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译：提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

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