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    • 44. 发明申请
    • MECHANICAL SHUTTER CONTROL METHOD AND IMAGE SENSING APPARATUS
    • 机械快门控制方法和图像感应装置
    • US20080152335A1
    • 2008-06-26
    • US11948123
    • 2007-11-30
    • Masanori Sakai
    • Masanori Sakai
    • G03B7/10
    • G03B7/10H04N5/2254H04N5/23293H04N5/2353H04N2101/00
    • A control method for a mechanical shutter in an image sensing apparatus that has the mechanical shutter which includes and a second curtain held in a pre-travel initial position using electric power, that performs image sensing using an image sensor, and that has an electronic viewfinder function. The voltage of the electric power for holding the second curtain is reduced during execution of the electronic viewfinder function, the voltage of the electric power for holding the second curtain is raised if a shutter speed set for image sensing is faster than a preset period in a case where still image sensing is instructed, and the second curtain is made to travel when a period corresponding to the shutter speed has elapsed.
    • 一种用于具有机械快门的图像感测装置中的机械快门的控制方法,所述机械快门包括使用电力保持在预行程初始位置的第二帘幕,其使用图像传感器执行图像感测,并且具有电子取景器 功能。 在执行电子取景器功能期间,用于保持第二帘幕的电力的电压降低,如果为图像感测设定的快门速度比预定时间段快,则用于保持第二帘幕的电力的电压升高 指示静止图像感测的情况,并且当经过与快门速度相对应的周期时,使第二帘幕行进。
    • 48. 发明授权
    • Method for producing a semiconductor device
    • 半导体器件的制造方法
    • US06204199B1
    • 2001-03-20
    • US09393276
    • 1999-09-10
    • Masanori SakaiMasayuki TsunedaNaoko MatsuyamaHideharu ItataniMichihide Nakamure
    • Masanori SakaiMasayuki TsunedaNaoko MatsuyamaHideharu ItataniMichihide Nakamure
    • H01L2102
    • C23C16/45502C23C16/405C23C16/4408C23C16/4412C23C16/455H01L21/31604H01L21/67017
    • A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52, 53) and gas exhaust ports (54, 55). The substrate in the reaction tube (51) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (51) through the gas feed ports (52, 53) and exhausting the prescribed gas from the reaction tube (51) through all the exhaust ports (54, 55). A film-forming gas is supplied to the reaction tube (51) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (51). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (51) from the gas feed ports (52, 53) while being exhausted from the reaction tube (51) through all the exhaust ports (54, 55), thereby removing a residual gas in the reaction tube.
    • 用于制造半导体器件的方法和设备可以在衬底上提供均匀的膜。 将基板引入具有气体供给口(52,53)和排气口(54,55)的反应室或管(51)中。 反应管(51)中的基板通过气体供给口(52,53)向反应管(51)供给预定气体,并从反应管(51)排出规定的气体,将其加热至大致成膜温度 )通过所有排气口(54,55)。 向反应管(51)供给成膜气体,在基板上形成膜。 将其上形成有膜的基板从反应管(51)中取出。 此外,在基板上形成膜之后,通过所有排气口(54,54)从反应管(51)排出,从气体供给口(52,53)向反应管51供给预定的气体, 55),从而除去反应管中的残留气体。