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    • 41. 发明申请
    • SYSTEMS AND METHODS FOR PROVIDING REMOTE PRE-FETCH BUFFERS
    • 用于提供远程预电效应缓冲器的系统和方法
    • US20080005479A1
    • 2008-01-03
    • US11419586
    • 2006-05-22
    • Robert B. Tremaine
    • Robert B. Tremaine
    • G06F12/00
    • G06F13/1673
    • Systems and methods for providing remote pre-fetch buffers. The systems include a computer memory system with a memory controller, one or more memory busses connected to the memory controller, and at least one memory subsystem in communication with the memory controller via the memory busses. The memory controller generates, receives and responds to memory access requests including unsolicited data transfers. The memory subsystem includes one or more memory devices and logic to initiate an unsolicited data transfer to the memory controller based on analysis performed at the memory subsystem of prior memory access requests received by the memory subsystem.
    • 用于提供远程预取缓冲区的系统和方法。 这些系统包括具有存储器控制器的计算机存储器系统,连接到存储器控制器的一个或多个存储器总线以及经由存储器总线与存储器控制器通信的至少一个存储器子系统。 存储器控制器生成,接收并响应包括主动请求的数据传输的存储器访问请求。 存储器子系统包括一个或多个存储器设备和逻辑,用于基于在存储器子系统处对由存储器子系统接收的先前存储器访问请求执行的分析来发起向存储器控制器的非请求数据传输。
    • 47. 发明授权
    • Programmable logic circuit using three-dimensional stacking techniques
    • 可编程逻辑电路采用三维堆叠技术
    • US08493089B2
    • 2013-07-23
    • US13080994
    • 2011-04-06
    • Edgar R. CorderoRobert B. Tremaine
    • Edgar R. CorderoRobert B. Tremaine
    • H01L25/00
    • H03K19/08G11C29/08H03K19/17752H03K19/17796
    • A configurable die stack arrangement including a first configurable integrated circuit die located on a first substrate. The first configurable integrated circuit die includes a first array and a first configuration memory management circuit that includes an interface to the first array. The first array includes a first logic element and a first configuration memory. The configurable die stack arrangement also includes a second configurable integrated circuit die located on a second substrate that is different than the first substrate. The second configurable integrated circuit die includes a second array and a second configuration memory management circuit that includes an interface to the second array. The second array includes a second logic element and a second configuration memory. A signal is coupled to the first configuration management circuit and to the second configuration management circuit, and the first configuration memory management circuit includes circuitry to control the signal.
    • 一种可配置的管芯堆叠装置,其包括位于第一衬底上的第一可配置集成电路管芯。 第一可配置集成电路管芯包括第一阵列和第一配置存储器管理电路,其包括与第一阵列的接口。 第一阵列包括第一逻辑元件和第一配置存储器。 可配置管芯堆叠装置还包括位于与第一衬底不同的第二衬底上的第二可配置集成电路管芯。 第二可配置集成电路管芯包括第二阵列和第二配置存储器管理电路,其包括到第二阵列的接口。 第二阵列包括第二逻辑元件和第二配置存储器。 信号耦合到第一配置管理电路和第二配置管理电路,并且第一配置存储器管理电路包括用于控制信号的电路。
    • 49. 发明申请
    • Memory Package Utilizing At Least Two Types of Memories
    • 记忆包利用至少两种类型的记忆
    • US20120198143A1
    • 2012-08-02
    • US13438594
    • 2012-04-03
    • Robert B. Tremaine
    • Robert B. Tremaine
    • G06F12/06
    • G06F12/0638Y10S707/99931
    • A memory package and methods for writing data to and reading data from the memory package are presented. The memory package includes a volatile memory and a high-density memory. Data is written to the memory package at a bandwidth and latency associated with the volatile memory. A directory map associates a volatile memory address with data in the high-density memory. A copy of the directory map is stored in the high-density memory. The methods allow writing to and reading from the memory package using a first memory read/write interface (e.g. DRAM interface, etc.), though data is stored in a device of a different memory type (e.g. FLASH, etc.).
    • 介绍了一种用于将数据写入数据并从存储器包中读取数据的存储器包和方法。 存储器包包括易失性存储器和高密度存储器。 数据以与易失性存储器相关联的带宽和延迟写入存储器包。 目录图将易失性存储器地址与高密度存储器中的数据相关联。 目录图的副本存储在高密度存储器中。 该方法允许使用第一存储器读/写接口(例如,DRAM接口等)从存储器包写入和读取,尽管数据存储在不同存储器类型(例如FLASH等)的设备中。
    • 50. 发明授权
    • Memory package utilizing at least two types of memories
    • 使用至少两种类型的存储器的存储器封装
    • US08219746B2
    • 2012-07-10
    • US12576028
    • 2009-10-08
    • Robert B. Tremaine
    • Robert B. Tremaine
    • G06F12/00
    • G06F12/0638Y10S707/99931
    • A memory system and methods for memory manage are presented. The memory system includes a volatile memory electrically connected to a high-density memory; a memory controller that expects data to be written or read to or from the memory system at a bandwidth and a latency associated with the volatile memory; a directory within the volatile memory that associates a volatile memory address with data stored in the high-density memory; and redundant storage in the high-density memory that stores a copy of the association between the volatile memory address and the data stored in the high-density memory. The methods for memory management allow writing to and reading from the memory system using a first memory read/write interface (e.g. DRAM interface, etc.), though data is stored in a device of a different memory type (e.g. FLASH, etc.).
    • 介绍了一种存储器系统和存储器管理方法。 存储器系统包括电连接到高密度存储器的易失性存储器; 期望以与易失性存储器相关联的带宽和等待时间从存储器系统写入或读取数据的存储器控​​制器; 易失性存储器内的目录,其将易失性存储器地址与存储在高密度存储器中的数据相关联; 以及高密度存储器中的冗余存储器,其存储易失性存储器地址和存储在高密度存储器中的数据之间的关联的副本。 用于存储器管理的方法允许使用第一存储器读/写接口(例如DRAM接口等)从存储器系统进行写入和读取,尽管数据存储在不同存储器类型(例如FLASH等)的器件中, 。